S3407 Search Results

TMS34061FNL

Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
Contextual Info: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW

tms34061fnl

Abstract: TMS34070NL TMS34061FN TMS34061 TMS4464 TMS34010 SPVU001 Texas Instruments 34010 TMS34070 TMS4461
Contextual Info: TMS34010 GRAPHICS SYSTEM PROCESSOR o I^ o 004773 JA N U A R Y 1 9 8 6 - REVISED JULY 1 9 8 7 FN PACKAGE Instruction Cycle Time: - 16 0 ns . . . T M S 34 01 0-50 - 2 0 0 ns . . . (T M S 3 4 01 0-40) (TOP VIEW ) I il i l 9 Pixel Processing, XY Addressing, and

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

S5557

Abstract: S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional O utline (P.50 to 52)/ W indow M aterial "1 Active Area Size (mm) Effective Spectral Response Range Area X Peak Sensitivity W avelength X,p (mm2) (nm) (nm) 320 to 730

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S3407

Abstract: SS493 S3407-01
Contextual Info: Si Photodiodes Visible/Visible to ÍR Range, for General Photometry Type No. Dimensional Outline (P.50 to 53)/ Window Material *1 Effective Active Area Active Spectral Response Range Peak Sensitivity Wavelength X Xp Photo Sensitivity S (A/W) - - . - • - He-Ne

Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Dimensional Active Effective Outline (P.48,49)/ Package Area Size Active Area Window Material (mm) (mm2) Type No. S1087 A/ 1.3X1.3 1.6 S1133 © /V 2.4X2.8 6.6 S 1087-01 ® /R 1.3X1.3

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S2833-01

Abstract: TH800 S3407 infrared circuit
Contextual Info: Silicon Photodiodes Visible/Visible to IR Range S 4797-01 Plastic mold S 1 133-14 Ceramic S 3407-01 *1 /R Plastic mold 1 .3 X 1 .3 1.6 2 .4 X 2 .8 6.6 32 0 to 1000 (c) 720 0.4 0.2 0.37 0.33 W in d o w m a te ria l, R: re s in c o a tin g , V: v is u a l-c o m p e n s a tio n filte r

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

thyristor TAG 8506

Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Contextual Info: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

S1337-33BR

Abstract: s4160 S3407 S1227-66BQ S5107 8S02
Contextual Info: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000

ic tms34070

Abstract: TMS34070-66 AM/TMS 34070
Contextual Info: ADVANCE I N F O R M A T IO N .W J S34070-66 COLOR P A LET T E 000826 APRIL 1 9 8 6 • • • N PACKAGE Three 4-Bit Video-DAC Outputs Directly Drive 75 -0 Monitor Cables TOP VIEW Sixteen 14-Bit Color Lookup Registers Support the Simultaneous Display of a

S2833-01

Abstract: S3407 S1087
Contextual Info: Si Photodiodes Visible/Visible to IR Range, for General Photometry Type No. Dimensional Outline Package (P.43-46)/ Window Material*1 (mm) Active Effective Area Size Active Area (mm) (mm2) (nm) 320 — 730 1.3X1.3 1.6 S1133 /v 2.4X2.8 6.6 S1 087-01 ® /R

ir remote power meter

Abstract: visible light communication Photodiodes G1126-02
Contextual Info: Selection Guide Spectral Response Range nm 200 400 600 800 1000 1200 . Feature Major Application Type No. Listed Page S1336/S 1337 Series 16, 17 S1226/S 1227 Series 18, 19 S2386/S2387 Series

QS113

Abstract: S3590 S692
Contextual Info: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. U nit: m m S2386-18L