S6045 Search Results

Si apd photodiode

Abstract: photodiode Avalanche photodiode APD FOR POWER G
Contextual Info: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package S6045-01 S6045-02 0 /K T O -18 S6045-03 S6045-04 /K TO-5 S6045-05 /K S6045-06 ® /K T O -8 Area Spectral Response Range

Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

S6045

Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

NM600

Abstract: S6045 S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Contextual Info: PHOTODIODE Si APD S6045シリーズ 低温度係数タイプ800 nm帯用APD 特長 用途 l 低い温度係数: 0.4 V/ ˚C l 高速応答 l 高感度、低雑音 l 光ファイバ通信 l 空間光伝送 l 距離計 • 一般定格／絶対最大定格

S6045

Abstract: S6045-01 S6045-02 S6045-03 S6045-04 S6045-05 S6045-06
Contextual Info: PHOTODIODE Si APD S6045 series Low temperature coefficient type APD for 800 nm band Features Applications l Low temperature coefficient: 0.4 V/˚C l High-speed response l High sensitivity, low noise l Optical fiber communications l Spatial light transmission

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Si APD S6045/S12060シリーズ 低温度係数タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDです。動作電圧の温度係数が低く設計されており、広い温度範囲で安定した動作が可能です。 光波距離計・空間光伝送などの用途に適しています。

APD bias gain

Abstract: avalanche photodiode bias LH0032
Contextual Info: Si APDs Type No. Low Temperature Coefficient Types, for 800 nm Range Dimensional Outline (P.46, 47)/ Window Material *1 Package /K T O -18 S6045-01 S6045-02 S6045-03 S6045-04 /K S6045-05 ® /K S6045-06 ® /K TO-5 TO-8 Effective '2 Effective Active Area

Contextual Info: Si APD S6045/S12060 series Low temperature coefficient type APD for 800 nm band The S6045 and S12060 series are near infrared Si APDs developed for use in the 800 nm wavelength band. These APDs are designed so that the temperature coefficient of the operating voltage is low enough to ensure stable operation over a wide

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

SUB60N06

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

ir remote power meter

Abstract: spectrophotometer G1746
Contextual Info: Selection Guide Spectral Response Range nm 400 600 800 1000 200 _l I I I Feature Major Application Type No. 1200 I I 1 Listed : Pa9e Si Photodiodes 190 1100 190 1000 320 1100 320 UV to IR range, for precision photometry

S4315

Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
Contextual Info: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response

S6018

Abstract: S6008 S6017 S-6037 S6010 S6029 S6046 s6016 S6022 S6047
Contextual Info: S6000 Series MIL-STD-981 Fixed Chip Inductors for Space Applications M83446/6 -01 to –48 With tabs FEATURES Military QPL Approved. Pick-and-place compatible. SPECIFICATIONS Met the requirements of MIL-PRF83446 and MIL-STD-981, class S or class B. Class S parts are intended for critical

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Delta Electronics dps 350

Abstract: Delta Electronics dps 600 Delta Electronics dps 250 S-4379 Delta Electronics dps 250 db Delta Electronics dps 200 Model 7908 tunnel diode specifications S-6033 Delta Electronics dps 500 "power supply"
Contextual Info: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev

rlcelectronics

Abstract: Delta Electronics dps 600 Delta Electronics dps 500 Delta Electronics dps 670 db Delta Electronics dps 250 db "Delta Electronics" dps 800 str 6052 Delta Electronics dps 250 Delta Electronics dps 350 str w 6052
Contextual Info: Micro Miniature and Surface Mount Low Pass Filters RLC Electronics' Micro Miniature Low Pass Filters utilize proprietary dielectric materials and manufacturing techniques to achieve performance rivaling much larger devices. Standard units are 0.05dB Chebychev

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

MIL-S-3928

Abstract: S6078 S-6064 S6052 s6064 S6050
Contextual Info: QPL Approved Switches RLC Electronics, Inc. a manufacture of high Quality mechanical Switches for over 40 years, is also Qualified to MIL-S-3928/xx-xx on the following part numbers: RLC Part Numbers Per MIL-S-3928 Cross Reference Table QPL P/N SLASH NO. OPTION NO.

S3884

Abstract: G1116
Contextual Info: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: r ^S-13. Si Photodiode Arrays with 35.38 and 46 Elements Wide active area, for multichannel spectrophotometry The S4111, S4112, S4113 and S4114 series Si photodiode arrays have DIP-type ceramic cases with quartz glass windows. They are an excellent choice for very-low-light applications such as spectrophotometery. They

TR1111

Contextual Info: SPICE Device Model SUP/SUB60N06-18 Vishay Siliconix N-Channel Enhancement-Mode Transistor CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si APDs Type No. MaaibDi GOümßß sos Low Bias Operation, for 800 nm Range Dimensional Outline (P.44,45)/ W indow Material Effective Package Active Area® Sizij (mm) Effective Active Area (mm2) S2381 56 0 . 2 0.03 S2382 ¿ 0.5 0.19 5 6 1 .0 0.78 ¿ 1 .5