S2384 Search Results

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

S2381

Abstract: S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611 Si apd photodiode rangefinder
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

G1125-02

Abstract: S2216 02 S1863 G1126-02
Contextual Info: HAMAMATSU CORP ITE D • 422^0^ 00G2534 1 ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Typical Radiant Sensitivity A/W Outlines Type No. Window Materials Characteristics (25°C) Package (mm) Size Effective Area Range Peak Wave­ length

Contextual Info: Selection guide - March 2014 Si APD Avalanche Photodiode High-speed, high sensitivity photodiodes having an internal gain mechanism HAMAMATSU PHOTONICS K.K. S i A v a l a n c h e P h o t o d i o d e Si APD High-speed, high sensitivity photodiodes having an internal gain

hamamatsu S875

Abstract: S1190-01 S1188-02 S2387-16R 900nm LED S2506 S1190 hamamatsu S1721 S2216 02 Hamamatsu S1133
Contextual Info: HAMAMATSU CORP n E Silicon Photodiodes Type No. D • ‘JHST b G ' i 0 0 G S S 24 Visible Light to IR, for Precision Photometry Photosensitive Surface Spectral Response Out­ line Package (mm) «J Characteristics (25°C) Radian Sensitivity (A/W) Size

Ge APD

Abstract: Si apd photodiode pin photodiode 6 pF TO5 avalanche Photodiode 300 nm
Contextual Info: Silicon Avalanche Photodiodes Dimensional Outline P.38,39 / Window Material*' Type No. S2381 S2382 O /K S2383 Spectral Response Range A Active Area Effective Active Package Size Area (mm) (mm2) TO-18 560.2 0.03 TO-18 ¿ 0.5 0.19 TO -18 ¿1.0 0.78 S3884 /K

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

S4315

Abstract: APD reverse bias stability C5331 Si apd photodiode 10NAX S2385 52384 kap06 Si apd photodiode rangefinder S2381
Contextual Info: Si APDs Type No. Low-bias Operation Types, for 800 nm Range Dimensional O utline (P.46, 47)/ W indow M a te ria l-1 Package S2381 Effective '3 Effective Active Area Active Size Area (mm) (mm2) Ô0.2 0.03 (J)0.5 0.19 (>1.0 0.78 <t>1.5 1.77 Spectral Response

S2381

Abstract: Si apd photodiode S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S4315-02
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Optical fiber communications l Spatial light transmission l Rangefinder

S4315

Abstract: S5139 s2381 S2382 S2383 S2383-10 S2384 S2385 S3884 S8611
Contextual Info: PHOTODIODE Si APD S2381~S2385, S5139, S8611, S3884, S4315シリーズ 低バイアス動作タイプ800 nm帯用APD 特長 用途 l 低バイアスで安定動作が可能 l 高速応答 l 高感度、低雑音 l 空間光伝送 l 距離計 • 一般定格／絶対最大定格

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

S1722-01

Abstract: S1723-04 S1723-06 S1723-08 S-1721 S1721 S1863 G1117 si7202 S2164-01
Contextual Info: HAMAMATSU CORP 11E D • 452=^0= Q G G 2 S 3 0 4 ■ T ^ m - 6 3 PIN Silicon Photodiodes Photosensitive Surface Spectral Response Characteristics at 25°C) Radiant Sensitivity Typ. (A/W) Outlines Type No. Features S1722 2.54mm dia. sensitive area, for visible to IR

S3407

Abstract: S4036 S5533
Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!

S2383

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

Contextual Info: Si APD S12023シリーズなど 低バイアス動作タイプ800 nm帯用APD 800 nm帯の近赤外域用のSi APDで、200 V以下の低電圧で動作が可能です。空間光伝送・光波距離計などの用途に適して います。 特長 用途

S12926

Abstract: S12926-05
Contextual Info: セレクションガイド 2015.1 Si APD アバランシェ・フォトダイオード 内 部 増 倍 機 能 を もった 高 速・高 感 度 の フォト ダ イ オ ード Si AVALANCHE PHOTODIODES S i P h o t o d i o d e Si APD (アバランシェ・フォトダイオード)

Contextual Info: Si APD S12023 series, etc. Low bias operation, for 800 nm band These are 800 nm band near-infrared Si APDs that can operate at low voltages, 200 V or less. They are suitable for applications such as FSO free space optics and optical rangefinders. Features

s2381

Abstract: S2382 S2383-10 S2383 S2384 S2385 S3884 S5139 S8611
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

GaP photodiode APD

Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

S2381

Abstract: S4315-02
Contextual Info: Si APDS Type No. Low-bias Operation Types, for 800 nm Range Dimensional Outline (P.46, 4 7)1 Window Material ' 1 S2381 Package Effective Active Area Active Size Area (mm) (mm2) <(>0.2 0.03 00.5 0.19 4>1-0 0.78 4)1.5 1.77 /K S2382 (NEW) -Effective *3

Contextual Info: HAMAMATSU CÔRP ITE D • 452^01 0GG5532 A ■ GaAsP Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) Characteristics (25°C) Typical Radiant Sensitivity (A/W) Short Circuit Current

photodiode

Abstract: schottky photodiode uv photodiode, GaP GaP photodiode APD Si PIN PHOTODIODE uv photodiode Si apd photodiode 800 nm GaP photodiode PIN 38 PHOTODIODE
Contextual Info: Index by Type No. Type No. Name Page S 1087. .Si Photodiode Visible/Visible to IR Range, for General Photometry . . 22, 23 S 1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23

Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884 Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings

S4315

Abstract: S2381 S2382 S2383 S2383-10 S2384 S2385 S3884 S5139 S8611
Contextual Info: PHOTODIODE Si APD S2381 to S2385, S5139, S8611, S3884, S4315 series Low bias operation, for 800 nm band Features Applications l Stable operation at low bias l High-speed response l High sensitivity and low noise l Spatial light transmission l Rangefinder • General ratings / Absolute maximum ratings