S2306 Search Results

Contextual Info: S2306 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 160mW ID 22A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

ELD323R

Abstract: ELD-323R ELS-1720 ELS1723P ELS 1720p D305HWB S1001HWA S1006IDR 1723R els-1720y
Contextual Info: E4 D EVERLIGHT ELE CTRONICS LED DIGIT DISPLAYS Type No. and Remark Display Size New Modal No. Chip ' Material Emitted - Color C.C. or C .K Xp nm (* ) 1.0 inch Single Digit n £ = Jn H ELS-1723B GaAsP Red S1001HWA * ELS-1723P GaP Bright Red S1M1GWA • ELS-1723G

Contextual Info: — Data Antennas Corner Reflector 6 d Bi Directional Antenna S 2406C T h is an te n n a is d ire ctio n al but is e n c lo s e d in a 6 in ch d iam eter round e n c lo s u re . T h e e n c lo s u r e its e lf is a n a lm o n d c o lo r h ig h stre n g th

Contextual Info: REV. A - 2 .8 0 □ATE DESCRIPTION UPDATE 1 1 /Z 2 /0 4 DRAWING FORMAT [.1 1 0 ] -9 .5 0 [.3 7 4 ] 4 .0 0 [ .1 5 7 ]- MMM RECOMMENDED CABLE STRIPPING DIM'S CN T— cvl ca — i- 5 / 8 —24UNEF—2A rs* m NOTE: UNLCSS Dm O W IH SPCDTICD DWENSDNS ARC H M lLU H raS. DdCNSONS H [ ] ARE W

Contextual Info: DATA SHEET SKY13358-388LF: 0.1–3.0 GHz SP5T Switch Applications RF2 RF3 • 2G/3G cellular infrastructure Features RF1 RF4  Broadband frequency range: 0.1 to 3.0 GHz  Low insertion loss: 0.8 dB typical @ 2.2 GHz  High isolation: 24 dB typical @ 2.2 GHz

S2306

Abstract: S6926 S2366
Contextual Info: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. Unit: mm 0 S5821-01, etc.