S1223 Search Results

NMTG-S12232CFYHSGY-10

Abstract: AX6120D0A 2SA1202 Microtips Technology
Contextual Info: Messrs. Product Specification Model: NMTG-S12232CFYHSGY-10 Rev. No. Issued Date. Page. A Sep.06, 06 1 / 21 LIQUID CRYSTAL DISPLAY MODULE MODEL: NMTG-S12232CFYHSGY-10 Customer’s No.: Acceptance Microtips Technology Inc. 12F. No.31 Lane 169, Kang Ning St.,

S2858

Abstract: S2551-01 S1190-03 S1723-06 14 pin photodiode s1188 S1190-04 AT82 S1723-04
Contextual Info: PIN Silicon Photodiodes Type No. S1188-02 S1188-06 S 2216-01 S 2216-02 S2839 S2840 S1190 S1190-Q1 S1190-03 S1190-04 S1223 S1223-01 Package Effective Sensitive Area mm (mm) 3-pin TO-18 3-pin TO-18 3-pin TO-18 Radiant Sensitivity Peak Spectral Bp Wavelength

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

S1223-01

Contextual Info: PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package @/K TO-5 S1223-01 Active Area Effective Size Active Area (mm) (mm2) 2.4X2.8 6.6 3.6X3.6 13 S3071 /K TO-8 (p 5.0 19.6 S3072 @/K TO-5 <f>3.0 7.0 S1863-01 ® /K

Contextual Info: Si PIN Photodiodes 4 Type No. Dimensional Outline (P.40-43)/ Window Material*' S1223 S1223 01 S3071 S3072 S1863-01 S3883 S3399 S5106 S5107 S3590 01 S3590 03 S3590 05 S3588 03 *1 W i n d o w m aterial, O /K K /K © /K ® /K ® /K ® /R ® /R Short Photo Sensitivity S (A/W) Typ.

PowerVR2

Abstract: powervr PD62010 PD4516161G5-A12 GP015 D62011GD PD62011IEEE PD62011 GP10 SDDATA27
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

S1190 hamamatsu

Abstract: S1190-01 S1190-03 S2216-01 S2856 S1190 S1188-02 S2216-02 S2216 02 S2164-01
Contextual Info: HAMAMATSU CORP 1TE D • 42STbGT OOGSSEfl L> PIN Silicon Photodiodes Photosensitive Surface Spectral Response Outlines Type No. Features Window Materials S1188-02 Ultra-high speed response Q /K S1188-06 S2216-01 Ultra-high speed response, low bias type O /K

Contextual Info: SQ2351ES www.vishay.com Vishay Siliconix Automotive P-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 4.5 V 0.115 RDS(on) () at VGS = - 2.5 V 0.205 ID (A) - 3.2 Configuration S 1 3 S • Material categorization:

220v AC voltage stabilizer schematic diagram

Abstract: BA 49182 RJh 3047 rjh 3047 equivalent a1458 opto philips ecg master replacement guide MOSFET, rjh 3077 sc1097 philips ecg semiconductors master replacement guide Electronic ballast 40W using 13005 transistor
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 2-6 Fiber Optic Connectors and Accessories . . . . . . . . . . . See Page 121 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 10-122 Fiber Optic Cable, Connectors, and Accessories . . . . . . See Pages 118-122

dual mosfet 4620

Abstract: si4491 SI4491E
Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch

sot-23 Marking N2

Contextual Info: Si2302CDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • TrenchFET Power MOSFET • Material categorization: For definitions of compliance please see

Contextual Info: SiHW47N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.064 Qg max. (nC) 220 Qgs (nC) 36 Qgd (nC) 60 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg

SAC396

Abstract: M6260
Contextual Info: SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: SPICE Device Model SQD30N05-20L Vishay Siliconix N-Channel 55 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SQ2310ES www.vishay.com Vishay Siliconix N-Channel 20 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SiP32451, SiP32452, SiP32453 Vishay Siliconix 0.9 V to 2.5 V, 55 m Load Switch in WCSP4 DESCRIPTION FEATURES SiP32451, SiP32452 and SiP32453 are n-channel integrated high side load switches that operate from 0.9 V to 2.5 V input voltage range. SiP32451, SiP32452 and SiP32453 have low input logic

Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch

S2306

Abstract: S6926 S2366
Contextual Info: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. Unit: mm 0 S5821-01, etc.

Contextual Info: New Product Si7655DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0036 at VGS = - 10 V - 40e 0.0048 at VGS = - 4.5 V - 40e 0.0085 at VGS = - 2.5 V - 40e Qg (Typ.) 72 nC PowerPAK 1212-8S APPLICATIONS

SiA483DJ

Abstract: D 2394 SIA483DJ-T1-GE3
Contextual Info: New Product SiA483DJ Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A) 0.021at VGS = - 10 V - 12a 0.030 at VGS = - 4.5 V - 12a Qg (Typ.) 21 nC PowerPAK SC-70-6L-Single 1 APPLICATIONS D • Smart Phones, Tablet PCs, Mobile Computing: