0G03B Search Results

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

74L5273

Abstract: DS1285 DS1287 74LS273 DS1239 DS228 DS2287-32 DS2287-8 DS1287 real time Dallas chip DS1287
Contextual Info: DALLAS SEMICONDUCTOR CORP BTE D B Sbl413G 0DD3Se^ 3 • DAL OS2287 etóÉáSlisáÉmeiiSi W K w m y * T s ^ - a - i 2 > DS2287 CPU Supervisory Stik SEMICONDUCTOR t. » j* . !* ! Tirffirrr ~r" FEATURES PIN DESCRIPTION • Keeps track of time from seconds to years

PR1007

Abstract: pr1004 PR1001 PR1002 PR1003 PR1005 PR1006
Contextual Info: PR1001 Thru PR1007 1 AMP FAST RECOVERY RECTIFIER • FEATURES • • • • • • Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with freon, alcohol, chlorothene and similar solvents • UL recognized 9 4 V -0 plastic material

Contextual Info: H D A S -5 2 4 , H D A S -5 2 8 12-Bit, 400kHz, Complete Data Acquisition Systems B E 3A T E L IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • 12-Bit resolution, 400kHz throughput 8 Channels single-ended or 4 channels differential

Contextual Info: SC802-04 1 .OA SCHOTTKY BARRIER DIODE Outline Drawing I 3' / j r - f x a % tO C\J £ L l3 5 iM 12 MM. 1 4 iz t02 135 04 _ >04 5.1-ai • Features I Marking • Surface mount device • Lo w V f • Super high speed switching • High reliability by planer design

CD430690

Abstract: tsm 1250 CD431490 C043 CD431090 L2t marking SOT 363 BP107 L120 scr CD430190 CD430290
Contextual Info: POWEREX INC m / 1SE D m s • 7214b51 DQ03bGl 7 ■ C D 43 x Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72 . 75 . 15 r.ar-^ 90 Dual SCR POW-R-BLOK Module

DCM4 SMD

Contextual Info: ELH0101/883/8508901/2YX ELH0101/883/8508901/2YX hi:- ph’h-wkem jî •'tevi:. 1'»■.- P0W fT (JpCFQtiOTlttI A. TtipllfiCT F eatu res G eneral D escrip tion • 5A peak, 2A continuous o u tp u t cu rren t • 10 V /jas slew rate • 300 kH z pow er bandw idth

thyristor TT 45 N 1200

Contextual Info: POWEREX INC m 1SE D /m s • 7214b51 DQ03bGl x 7 ■ C D 43 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72 . 75 . 15 r.ar-^ 90 Dual SCR POW-R-BLOK Module

skm 100 gb 101 d

Abstract: skm 100 gb 121d Si 122D GAL 16 v 8 D DIP skm 100 gb 122 d skm 50 gb 101 d D4252-1 skm 200 gb 122 d skm 75 gb 101 d SEMIKRON SKM 22 GAL 121D
Contextual Info: m SIE I Ö13bb?l D[]G3L,7fl TbS » S E K G semikrdn SENIKRON INC Absolute Maximum Ratings Sym bol Values . 101 D I . 121 D . 102.D I . 122 D Conditions 1 1000 VCES Units 1200. 1000 , V 1200 V VCGR R g e = 2 0 kQ Ic Tease = 2 5 /8 0 °C 1 0 0 /7 5 ICM

Contextual Info: L Q G êO LF43881 8 x 8-bit Digital Filter DEVICES INCORPORATED FEATURES □ □ □ □ DESCRIPTION 40 MHz Maximum Sampling Rate 320 MHz Multiply-Accumulate Rate 8 Filter Cells 8-bit Unsigned or Two's Complement Data □ 8-bit Unsigned or Two's Complement

Contextual Info: SERIES 8390 2 mm Receptacles Through-Hole Mount Low Profile Vertical NUMBER OF POSITIONS PART NUMBER A B c 4,00 .1575 6,00 6 20-8390-2006-20-101 2 8 20-8390-2008-20-101 3 10 20-8390-2010-20-101 4 12 20-8390-2012-20-101 5 14 20-8390-2014-20-101 6 16 20-8390-2016-20-101

JSEY-9P-1A3F19-13

Abstract: mil C-24308 3f19 079001 386-40
Contextual Info: D SUBMINIATURE CONNECTOR JS SERIES Right angle SMT configuration p lu g -Normal type 19.8 .780 ' w Metal fixture(M2,5) _ limili! u - ¡; ;, ; ¡ Off-set type Type Circuits Model No. Nomai

ML501R-8CQ

Abstract: y16n F5 ferrite 6Cp 30 ML501R-6CS ML502-6
Contextual Info: ¡«fe, . ^ M lcro Lm ear ML501, ML501R, ML502, ML502R, ML502S-Series 6, 7, or 8-Channel Read /Write Circuits GENERAL DESCRIPTION FEATURES TheM L501, M L502 fam ily o f devices are bipolar m onolithic re ad/w rite circuits designed fo r use w ith fixed disk centertapped recording heads. The ML501 and ML501R are de­

Contextual Info: A S 4 C 2 5 6K 1 6F 0 Il 5V 2 5 6 K x 1 6 C M O S DRAM fast page m ode Features • Organization: 262,144 w ords by 16 bits • High speed - 2 5 /3 0 /3 5 /5 0 ns RAS access time - 12/1 6 /1 8 /2 5 ns column address access time - 7 /1 0 /1 0 /1 0 ns CAS access time

bq4010

Abstract: bq4010-150 bq4010-85 bq4010Y bq4010Y-xxxN
Contextual Info: bq4010 /bq401 OY te il BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in th e absence of pow er The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. T he integral control circuitry and lithium energy

V53C8256H

Abstract: Wx25
Contextual Info: M O SEL V IT E L IC V53C408H 1M x 4 PAGE MODE CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT HIGH PERFORMANCE PRELIMINARY 40 45 50 60 Max. RAS Access Tim e, tpiAC 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Tim e, (îc a a ) 20 ns 22 ns 24 ns 30 ns Min. Extended Data O ut Page Mode Cycle Tim e, (tPC)

SED2000F

Abstract: sed2032f
Contextual Info: Table of Contents 1.0 GENERAL 1.1 1.2 2.0 BLOCK DIAGRAMS. 7

SC321

Contextual Info: SC321 1.0A <S FAST RECOVERY DIODE • O utline Draw ing I Features • Surface mount device • High voltage by mesa design • High reliability by planer design - C A T H O D E MA R K IN G - S Y M B O L ■ HB 14 I Applications 1 • High speed switching

Contextual Info: B O A l E A M -1435 L Ultra-Fast, Wideband Operational Amplifiers IN N O V A T IO N a n d E X C E L L E N C E FEATURES • • • • • • 70 nanosecond settling to ±0.01% 1GHz gain bandwidth product lOOdB open loop gain 80dB minimum CMRR -55 to +125°C operation

RN55C

Contextual Info: HDAS-75, HDAS-76 B D A T E L 12-Bit, 75kHz, Complete Data Acquisition Systems IN N O V A T IO N a n a E X C E L L E N C E FEATURES • • • • • • 12-Bit resolution, 75kHz throughput 8 Channels single-ended or 4 channels differential Miniature 40-pin DDIP

Contextual Info: QS5820T Preliminary Information Guaranteed Low Skew CMOS Q QS5820AT QS5820BT 20 Output Clock Driver/Buffer FEATURES • • • • • 20 output, low skew clock signal buffer High drive FCT-type outputs Reduced swing TTL outputs for low noise Input hysteresis for better noise margin

Contextual Info: QS6611 Preliminary Data Sheet Rev. 3.4 Q QS6611 lO/lOOBaseTX Symbol Transceiver Quality Semiconductor Inc. Preliminary Data Sheet Rev. 3.4 October 1996 DISTINCTIVE FEATURES • Low power all-CMOS design with Icc <120 mA for lOBaseT, Icc <100 mA for 100BaseT

NTE stereo decoder

Abstract: NTE1201 NTE1211 nte1206
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE1201 Module, Hybrid, CB VCO N TE1200 16-Lead DIP, See Diag. 249 Color TV Chroma Processor, VCC = 13.2V 1st Chroma Amp Manual Cont Signal Hold Attenuator Bias Hold Attenuator r> CS N TE1202 10 -L e ad SIP, See Diag. 221 Module, Hybrid, CB VC O

LC7970

Abstract: 16 PU DIP28S 3029a CNF1
Contextual Info: ISE D I ? TT 7 □•7b DD03b3fci fl | SANYO SEMICONDUCTOR CORP i T - ^ S ' 13> 70 C M O S IC 3029A Key Scan Detector for Key Board of Capacitance Type I936A Functions Features . Contains an 8-input 1-output analog multiplexer. . Contains 2 CMOS OP amplifiers open loop gain: approximately 45dB typ. .