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    S5077 Search Results

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    TE Connectivity 202D253-4-61-0-CS5077

    Heat shrink boot
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    TME 202D253-4-61-0-CS5077 20 4
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    RS 202D253-4-61-0-CS5077 Bulk 25
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    Powell Electronics 202D253-4-61-0-CS5077 13 4
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    FDH Electronics 202D253-4-61-0-CS5077 1
    • 1 $65.47
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    TE Connectivity 202D232-4-61/42-0-CS5077

    Heat shrink boot; polyolefine
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    TME 202D232-4-61/42-0-CS5077 150
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    Powell Electronics 202D232-4-61/42-0-CS5077 13 150
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    TE Connectivity 202D263-4-61-0-CS5077

    Heat shrink boot
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    TME 202D263-4-61-0-CS5077 50
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    Interstate Connecting Components 202D263-4-61-0-CS5077
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    Powell Electronics 202D263-4-61-0-CS5077 14 100
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    FDH Electronics 202D263-4-61-0-CS5077 1
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    TE Connectivity 202D242-4-61/42-0-CS5077

    Heat shrink boot
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    TME 202D242-4-61/42-0-CS5077 100
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    Avnet Americas 202D242-4-61/42-0-CS5077 Bag 60 Weeks 175
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    Newark () 202D242-4-61/42-0-CS5077 Bulk 175
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    202D242-4-61/42-0-CS5077 Bulk 175
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    Sager 202D242-4-61/42-0-CS5077 175
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    Powell Electronics 202D242-4-61/42-0-CS5077 9 175
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    Master Electronics 202D242-4-61/42-0-CS5077
    • 1 $36.13
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    ifm efector inc IS5077

    Sensor: inductive
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    TME IS5077 1
    • 1 $84.16
    • 10 $80.33
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    S5077 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077


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    0003b2fi633nm930nms2506-04+6s2973s3321s4707-01s5573kspda0061eakspda0062ea PDF

    S2973-01

    Abstract: s6775 S2506-10
    Contextual Info: Si PIN Photodiodes 2 Dimensional Active Area Effective Active Type No. Outline Package (P.52, 53) Size Area (mm) (mm2) 2.4 X 2.8 6.6 S4707-01 S2973-01 © 1X 3 3 S5077 © 1.1 X 1.1 1.2 S3321 © <|>0.8 0.5 2x2 4 X Peak Sensitivity Wavelength A.p (nm) (nm)


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    s3321-04s4707-01s2973-01s5077+7s3321s7329-01s2506-02s2506-04s3321-c4s6775s2506-10 PDF

    Contextual Info: Si PIN Photodiodes 2 Dim ensional Active Area Effective Active Type No. O utline Package (P.51, 52) S4707-01 S2973-01 © S5077 © S3321 © Size (mm2) 2.4 X 2.8 6.6 1X 3 X 1.1 <>0.8 Peak Sensitivity Wavelength Xp Area (mm) 1.1 Spectral Response Range 3


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    s4707-01s2973-01s5077s3321+6s2506-02s2506-04s6786s6775s6775-01s6967 PDF

    Contextual Info: PIN Silicon Photodiodes 3 Active Area Effective Size Active Area (P.42, 43) (mm) (mm2) 2.77X2.77 7.7 Dimensional Type No. Outline Package S2506-02 S2506-04 S4707-01 © S5077 © S2973 © S3321 © Plastic mold 2.4X2.8 6.6 1.1X1.1 1.2 1X 3 3 ¿0.8 0.5 Peak


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    s2506-02s2506-04s4707-01s5077+6s2973s3321s5573633nm930nmkpinb0063eb PDF

    Contextual Info: Si PIN Photodiodes 2 Dim ensional Type No. Active Area Effective Size Activo Arca (mm) (mm2) Package O utline (P.49,50) Peak Spectral Response Sensitivity W avelength Range Ap A (nm) Ap S2506-04 2 .7 7 X 2 .7 7 a t\ 7.7 0.37 960 800 to 1100 920 320 to 1060


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    s2506-04s6786s6036s6036-01+6s4707-01s2973-01s3321s5573s5052s5077 PDF

    C2719

    Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
    Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for


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    s4282-11s4285-40s4810kspda00060ea+16s2833s2833-01kspda0061eakspda0062ead003tg2711-01c2719s1190-01s1223 pin photodiodes4160 equivalents12271010bs4753s3407-01hamamatsu s1336s4160g1118 PDF

    S2973-01

    Abstract: S3590-01 S5573 S6775 S1223 S1223-01 SS077 S3590 S5077 S6968
    Contextual Info: Si PIN Photodiodes 1 Dimensional Outline Type No. (P.46)/ Window Material ‘ 1 S5821 Active E f f e c t iv e Package ¡Area Size (mm) s Pe c tra l Response Range Area x ! xp (mm2) (nm) ¡ (nm) Short Circuit Current Photo Sensitivity S (A W ) T Peak Active


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    s5821s5821-01s5821-02s5821-03+15s5971s5972s5973s5973-01s5973-02s2973-01s3590-01s5573s6775s1223s1223-01ss077s3590s5077s6968 PDF

    Contextual Info: SiP21103 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load


    Original
    sip21103250-madropout--250noise--30+410-hz100-khz130-ma400-ma PDF

    S3407

    Abstract: S4036 S5533
    Contextual Info: Dimensional Outlines Unit : m m O S1226-18BQ, etc. 0 S1190-01, etc. 0 S2386-18L # 5 4 -0 2 WI NDOW iy o *o¿ ^ 4 PS > 0 j o 0 S5531, S5532, S5533 0 S2216-01, etc. O S1190-13 2 ^ r> 4 t ü i- 4 fih ‘ :i i V* 4 6>cj • 0 1 : o -cP -l: • > *'<i Y", 5 K 1 y jtj ¡Inirosiln . it«- ijl.iss!


    OCR Scan
    s1226-18bqs2386-18ls1190-01s1190-13+8s2216-01s5531s5532s5533s2381s2382s3407s4036 PDF

    mv silicon mp3 player

    Abstract: S5077
    Contextual Info: SiP21104 Vishay Siliconix New Product 250-mA Ultra Low-Noise LDO Regulator With Discharge Option FEATURES D D D D D D D D D D D D D D Ultra Low Dropout—250 mV at 250-mA Load Ultra Low Noise—30 mVRMS 10-Hz to 100-kHz Shutdown Control 130-mA Ground Current at 250-mA Load


    Original
    sip21104250-madropout--250noise--30+610-hz100-khz130-ma400-mamv silicon mp3 players5077 PDF

    S5532

    Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral


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    s4280s5531s4752s5533+6s4753s4751s5532kspda0061eakspda0062ead003t PDF

    GaP photodiode APD

    Abstract: uv photodiode, GaP GaP photodiode PIN S-4036 UV photodiode PIN Photodiode S3590 GaP photodiode schottky photodiode
    Contextual Info: Index by Type No Type No. Name Page S1087. .Si Photodiode Visible/Visible to IR Range, tor General Photometry . 22, 23 S1087-01 . .Si Photodiode (Visible/Visible to IR Range, for General Photometry). 22, 23


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    s1087s1087-01g1115g1116+15g1117g1118g1120g1126-02s6801-01s6926gap photodiode apduv photodiode, gapgap photodiode pins-4036uv photodiodepin photodiodes3590gap photodiodeschottky photodiode PDF

    Contextual Info: K U H 71M1-7X U M « M39012/58— 3029 NOTES • 1. ■' r~ 1 .Ì2 3 M A X - MATING : Interface dimensions per Mil-C-39012/SMA Series and Solitron/Microwave MD-107. .OG>5 MATERIALS : Body & Press Ring:- •SHtZtklk TUBiWG -Stainless Steel per AMS-5640, Type 303, Cond. A.


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    71m1-7xm39012/58mil-c-39012/smamd-107+6ams-5640qq-c-530ww-t-799mil-p-19460l-p-403mil-l-25053/4 PDF

    S3407

    Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity


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    0dd311-43vs1087930nm+7560nm630nms4011s4160s4160-01s1133s3407 PDF

    S1190-01

    Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800


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    g003b24s2839s1190-01s1190-13+6s1190-03s2840s1190s2216-01633nm930nm PDF

    S1337-33BR

    Abstract: s4160 S3407 S1227-66BQ S5107 8S02
    Contextual Info: Dimensional Outlines Unit : mm O S1226-18BQ etc. S2386-18L S1190-01 etc. COMMON TO CASE COMMON T O C AS E KSPDA0047EA O S1190-13 f ¿ 2 .5 + 0 .2 f 2.5 4 ± 0 .2 The w in dow protrudes 0.2m m Max. above the rim. K type borosilicale glass win dow protrudes 0.2mm Max.


    OCR Scan
    s1226-18bqs2386-18ls1190-01kspda0047ea+12s1190-13s1226g1116g1736s2386s1336s1337-33brs4160s3407s1227-66bqs51078s02 PDF

    S2840

    Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.


    OCR Scan
    0003b5gs2829s4404-01s2041+7s2042kspda0061eakspda0062ead003tg2711-01s2833-04s2840 PDF

    Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc


    OCR Scan
    0g03bs1223660nm780nm+6830nms1223-01s3071s1863-0114mmto-8s3883 PDF

    Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000


    OCR Scan
    00031as1406-03s1406-04s1406-05+6s1406-06s5590s5591s3887g1957s1446 PDF

    Contextual Info: Si PIN Photodiodes 3 D im e n s io n a l Typ e No. O u tlin e Package (P .4 4 -4 6 ) R ange À W a v e le n g th H e -N e |G a A s L E D Laser 633nm 1 00 lx Typ. (n m ) (n m ) ¡ ] I E ffe ctive S p e c tra l R esponse S iz e A c tiv e A re a (m m ) (m m 2)


    OCR Scan
    s2506-04s4707-01s5077s2973+6s6036s5052s3321s5573633nm930nm PDF

    QS113

    Abstract: S3590 S692
    Contextual Info: Dimensional Outlines The lead intervals shown in the dimensinal outlines are center-to-center dimensions at the root of the leads. Dimensions are typical values unless otherwise specified. The values in parentheses are reference values. U nit: m m S2386-18L


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    s1226-18bqs2386-18ls5821-01g1115+9gt735g1961s1190s2366-18kkpinaq051eakpina0052eaqs113s3590s692 PDF