G1961 Search Results

G1962

Abstract: uv photodiode, GaP GaP photodiode
Contextual Info: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. Dimensional outline/ Window material /Q* /Q /Q G1961 G1962 G1963 Package

Contextual Info: GaPフォトダイオード G1961 G1962 G1963 ショットキ型 特長 用途 低暗電流 分析機器 高紫外感度 紫外線検出 構成／絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ①/Q* ②/Q ③/Q パッケージ 受光面

GaP photodiode

Abstract: G1962 uv photodiode, GaP G1961 G1963 ACTIVE LOAD PHOTODIODE
Contextual Info: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/

GaP photodiode

Abstract: uv photodiode, GaP G1962 G1961 G1963
Contextual Info: PHOTODIODE GaP photodiode G1961, G1962, G1963 Schottky type Features Applications l Low dark current l High UV sensitivity l Analytical instruments l UV detection • General ratings / Absolute maximum ratings Type No. G1961 G1962 G1963 Dimensional outline/

Contextual Info: GaP photodiode G1961 G1962 G1963 Schottky type Features Applications Low dark current Analytical instruments High UV sensitivity UV detection Structure / Absolute maximum ratings Type no. G1961 G1962 G1963 Dimensional outline/ Window material /Q* /Q /Q Package

G1961

Abstract: 075ID G1962 G1963
Contextual Info: PHOTODIODE GaPフォトダイオード G1961, G1962, G1963 ショットキ型 特長 用途 l 低暗電流 l 高紫外感度 l 分析機器 l 紫外線検出 • 一般定格／絶対最大定格 型名 G1961 G1962 G1963 外形 寸法図/ 窓材 ➀/Q * ➁/Q

Contextual Info: 0003b2fi HSt HPKJ PIN Silicon Photodiodes 3 Range Peak Sensitivity Wavelength À A p (nm) (nm) Spectral Dimensional Type No. Outline Package (P.42,43) Active Area Effective Size Active Area (mm) ( m m 2) 2.77X2.77 7.7 S2506-02 • S2506-04 S4707-01 S5077

C2719

Abstract: S1190-01 s1223 pin photodiode S4160 equivalent s12271010b S4753 S3407-01 hamamatsu S1336 S4160 G1118
Contextual Info: MHE'ìbCH 0 G03 b S l fi 3 T • HPKJ PHOTO ICs A photodiode and signal processing circuit are integrated. Photo ICs are intelligent light sensors consisting of a photodiode, signal processing circuit and signal output circuit. Molded in subminiature packages, these photo ICs are especially suited for

P873-G35-552

Abstract: p1760-04 P873-13
Contextual Info: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel­ oped a variety of opto-electronic semiconductor de­ vices. These competitively priced high quality products are designed to meet the requirements of general and

G1966M SAW FILTER

Abstract: 8 PIN SMD IC 314-150 k3264 K2977M L9453M ofw g 3254 b684 saw filter k6272k K9260M SIEMENS saw filter 44 MHz M3951M
Contextual Info: Siemens Matsushita Components One Port Resonators Center Frequency MHz 239,75 297,80 303,83 304,25 304,30 308,50 314,50 315,00 315,00 315,00 345,00 390,00 392,85 403,05 403,55 407,25 417,50 418,00 423,17 Type Frequency Frequency Insertion Tolerance Tolerance Attenuation

Contextual Info: GaP Photodiodes Type No. Dimensional Outline P.44,45 / W indow Material Package Active Area Size Effective Active Area (mm) (mm2) 1.1X 1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength A Ap (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current

S5532

Contextual Info: GGG3bEb bfl3 • HPKJ PIN Silicon Photodiodes 2 Dimensional Outline Type No. Package Window Material* S4280 O /K S5531 O /L 3-pin T O -1 8 with lens S4752 O /K 3-pin T O -1 8 S4753 ^ S5533 * Effective Size Active Area (mm) (mm!) ¿ 0 .8 0.5 Peak Spectral

Contextual Info: GaP Photodiodes Type No. Dimensional Outline P.38,39 / Window Material * Package Effective Active Area Active Size Area (mm) (mm2) 1.1X1.1 1.0 Spectral Peak Response Sensitivity Range Wavelength À (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current

g1962

Contextual Info: GaP Photodiodes Type No. Dimensional Outline P.40,41 / Window Material* Package Active Area Size Effective Active Area (mm) (mm2) Spectral Peak Response Sensitivity Range Wavelength X Ap (nm) (nm) Photo Sensitivity S Typ. (A/W) Short Circuit Current Isc 1000 fr

L9453M

Abstract: K9253M K2958M K2977M k9260m G1966M SAW FILTER K3255K K9456M G1966M G1984M
Contextual Info: Siemens Matsushita Components IF Filters for Intercarrier Applications Picture Carrier MHz Type PC - SC Distance MHz 36.88 38.00 B1952M K2953M K2958M K2959M K2963M K2965M K2972M K2973M K6264K K6264K K6265K K6265K K6268K K6277K K6277K K6284K M1973D G1872M G1875M

S3407

Contextual Info: • 4 2 2 ^ 0 ^ 0DD31.22 T3A ■ HPKJ Silicon Photodiodes Visible/Visible to IR Range Dimensional CM ie Type No. (P.41-43V Window Material"1 S1087 Package Effective Area Size Active Area Spectral Response Photo Sensitivity S Typ. (A/W) Peak . Sensitivity

S3884

Abstract: G1116
Contextual Info: GaAsP Photodiodes Soecfrai Response Hange Ü Typ« No U nle ss o tn e rw ise noted, Typ T a - 2. Package Peak SensÜMy W »wíe«#ti Ä# Phcflp Sanwfcvtfy 5 k&Q (am (AAV) ’ »imi {mm} ShW! CînXHt Current tec 100 h V»*10 mV 2456 * Mg? Xsâp • fiarfc

Contextual Info: Index by Type No. T yp e No Nam e Page S 1 0 8 7 . . Si P h o to d io d e V isible / V is ib le to IR R ange, T ype No S 1 3 3 6 -5 B K . Si P h o to d io d e (U V to IR R ange, fo r P re cisio n P h o to m e tr y . 14, 15

S1190-01

Contextual Info: MSaibtn G003b24 flOO • HPKJ PIN Silicon Photodiodes 1 Type No. Dimensional Outline (P.38)/ Window Material*1 S2216-01 S2839 /K Package O/K S1190-01 ® /L S1190-03 ® /K S1190-13 • /L ¿0.8 0.5 320 to 1060 900 0.57 0.55 ¿0.4 0.12 0.5 320 to 1000 800

G1961-01

Abstract: G1962-01 S1190 hamamatsu g1962 S1190-01 S1188-02 S2216 02 S2164 S2216-01 S1226-18BQ
Contextual Info: HAMAMATSU liE CÔRP D • 422=^0=1 Q002S3ti S ■ T ^ 4 \ - S \ GaP Photodiodes Photosensitive surface Spectral Response Outline. Type No. Window Materials Package mm Size Effective Area Range Peak Wave­ length (mm) (mm2) (nm) (nm) 190-520 440+30 Characteristics (25°C)

g1962-01

Abstract: u1116 G1126-02 G1120 hamamatsu PIN TO5 3x1015
Contextual Info: !• * 5 9 HAMAMATSU HE CORP D HSHItiGT DGGHHTB S tàmsââiÊÈàùÊim *m *h GaAsP Photodiodes Effective Sensitive Area mm Package Type No. (mm> (Ta = 25°C) Peak Radiant Spectral Wavelength Sensitivity Response atXp Xp (nm) (nm) (A/W) Short Circuit Shunt

S2840

Contextual Info: • 4 2 2 ^ 0 "I 0003b5G TT2 ■ HPKJ Related Products PHOTOTRANSISTORS The phototransistor gives a large output current as compared to photodiodes. Hamamatsu supplies high-sensitivity phototransistors based on its long experience with opto-semiconductor technology.

Contextual Info: 452'ïbGT 0G03b 30 004 HPK J PIN Silicon Photodiodes 4 Type No. S1223 Dimensional Outline (P.38-41)/ Window Material*1 Package /K TO-5 Active Area Size (mm) S1223-01 Short Photo Sensitivity S (A/W) Typ. Peak Spectral Circuit Response Sensitivity Current Isc

Contextual Info: 4 5 2 e!t i GÌ 00031a *47 30Ö • HPKJ Photodiode/Op Amp Devices Type No. Peak Spectral Active Area Response Sensitivity Size Range Wavelength mm (nm) (mm) Features S1406-03 2.4X2.4 190 to 1100 960 S1406-04 2.4X2.4 320 to 1100 960 S1406-05 2.4X2.4 190 to 1000