Q25752 Search Results

Am27C512s

Abstract: AM27C512-155
Contextual Info: ; ADV MICRO MEMORY 33E Q25752Ô DG2 Öö i a D T IAM3>4 - T - H b - 1 3 -2 9 Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • • • Fast access time — 70 ns Low power consumption: - 100 /¿A maximum standby current

12L10

Abstract: 16L6 PAL12L10 16JL Monolithic Memories pal18l4 18L4 20C1 PAL14L8 PAL16L6 PAL18L4
Contextual Info: ADV MICRO P LA /P LE /A RRAY S TL D e | Q25752ti GGË7SG5 Q T -4 6-1 3-4 7 '' C o m b in a to r ia l 1 2 L 1 0 , 1 4 L 8 , 1 6 L 6 P A L 1 2 L 1 0 1 8 L 4 , S e r ie s 2 0 L 2 , Ordering Information Features/Benefits • Combinatorial architecture PAL12L10 C NS STD

PAL26V16

Abstract: teradyne lasar
Contextual Info: FINAL COM’L: -15/20 IND: -18/24 Z I Advanced Micro Devices M A C H 1 3 0 - 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • 84 Pins ■ 64 Outputs ■ 64 Macrocells ■ 64 Flip-flops; 4 clock choices ■ 15 ns tpD Commercial

Contextual Info: FINAL COM’L: -7.5/10/12/15/20 a Advanced Micro Devices M A C H 1 3 1 -7 / 1 0 / 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ Programmable power-down mode 64 Outputs 64 Flip-flops; 4 clock choices

Contextual Info: CO M ’L: -5/7.5/10/12/15/20 M A C H 1 11 -5 /7 /1 0 /1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins ■ Program m able power-down mode ■ 32 M acrocells ■ ■ 5 ns tpD ■ 32 Flip-flops; 4 clock choices

Contextual Info: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e

TGS 2600

Abstract: PQT044 log tx2 1014
Contextual Info: AMDH Am79Q4457/5457 Quad Subscriber Line Audio Processing CircuitNon-Programmable QSLAC -NP Devices DISTINCTIVE CHARACTERISTICS • Performs the function of four Codec/Filters ■ A-law or (j-law coding ■ Additional Am79Q4457 device capabilities (per channel, set external)

yg 2025

Abstract: D-02227 ADVANCED MICRO SYSTEMS BE170 AM2925 AM2925A CD3024 ANS25 6p140 AM2925DC
Contextual Info: ADVANCED MICRO DEVICES L4 D Ë j 0557555 □□55555 3 | ~ 0 2 5 7 5 2 5 ADVANCED MICRO DEVICES 81C 2 2 2 5 8 Am2925/Am2925A T -B o a 3 1/ D £ Clock Generator and Microcycle Length Controller > 3 DISTINCTIVE CHARACTERISTICS C rysta l c o n tro lle d o s c illa to r

28F010

Abstract: AM28F010 AMD 478 socket pinout
Contextual Info: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption

PAL16l8 MMI

Abstract: PAL16LA OO3A MARKING PAL 006A pal 007a PLA 16L8 PAL16L8 programming algorithm IC PALCE16 mmi pla programmer reference guide pal 005a
Contextual Info: ADV HICRO PLA/PLE/ARRAYS C O M ’L 2flE 0aS7S2b D OGa^Mb- M IL P A L 1 6 R 8 il \ T -4 6 —1 9 -1 3 Am>a 5 Advanced Micro Devices F a m i l y 20-pin TTL P rogram m able Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay

Contextual Info: COM’L: -10/12/15/20 IND: -14/18/24 M A C H 2 2 0 -1 0 /1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 68 Pins ■ 48 Outputs ■ 96 Macrocells ■ 96 Flip-flops; 4 clock choices ■ 10nstpD

amd 8086

Contextual Info: PRELIMINARY 8 0 C 1 8 6 /8 0 C 1 88 CMOS High-lntegration 16-Bit Microprocessors Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes Include — System-level testing support high-impedance test mode — Enhanced mode with • DRAM Refresh Control Unit

188es board

Abstract: AMD k86
Contextual Info: A m 186 EM an d A m 188™ EM Advanced Micro Devices High-Performance, 80C186- and 80C188-Compatible, 16-Bit Embedded Microcontrollers DISTINCTIVE CHARACTERISTICS • E86™ fami ly 80C186- and 80C188-com patible m icrocontrollers with enhanced bus interface

Contextual Info: il Am7905A Advanced Micro Devices Subscriber Line Audio-Processing Circuit SLAC Device DISTINCTIVE CHARACTERISTICS • 4.096-MHz, 64-channel expanded mode operation Uses digital signal processing ■ Built-in test modes ■ Six user-program m able digital filters

am79c940

Contextual Info: a Advanced Micro Devices Am79C940 Media Access Controller for Ethernet MACE DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ ■ ■ ■ Integrated Controller with 10BASE-T transceiver and AUI port Supports IEEE 802.3/ANSI 8802-3 and Ethernet standards

am29f010

Contextual Info: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands

Contextual Info: COM’L: -12/15/20 IND: -14/18/24 M A C H 2 1 5 -1 2 /1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 44 Pins 38 Inputs with pull-up resistors ■ 32 Output Macrocells 32 Outputs ■ 32 Input Macrocells

Contextual Info: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

Contextual Info: ADV MICRO b4E MEMORY D • 02S7SEÖ 00321SÖ 7bD ■ Advanced Micro Devices Am27X256 256 Kilobit (32,768 x 8-Bit) CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed

Contextual Info: PRELIM INARY Advanced Micro Devices AmC002AFLKA 2 Megabyte Flash Memory PC Card DISTINCTIVE CHARACTERISTICS • High performance - 250 ns maximum access time ■ CMOS low power consumption - 25 mA typical active current X8 - 400 mA typical standby current

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

Contextual Info: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:

27X128

Contextual Info: a Advanced Micro Devices Am27X128 128 Kilobit 16,384 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ As an O TP EPROM alternative: ■ ±10% pow er supply tolerance — Factory optim ized programming ■ High noise im m unity — Fully tested and guaranteed