G2S75S Search Results

AM28F256

Contextual Info: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current

AMD 80L186

Abstract: SB80L186-16 SB80L188-12 N80L186-16 n80l188 SB80L186-12
Contextual Info: AMENDMENT 8 0 L 1 8 6 / 8 0 L 1 88 Low-Voltage CMOS High-lntegration 16-Bit Microprocessors a Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • Operation Modes include — System-level testing support high-impedance test mode — Enhanced mode with

Contextual Info: AMDËI AmCOXXDFLKA 1,2,4, or 10 Megabyte 5.0 V-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS Separate attribute memory • High performance Automated write and erase operations increase system write performance — 200/150 ns maximum access time ■ Single supply operation

Contextual Info: FINAL COM’L: -12/15/20 ZI M A C H 4 4 5 - 1 2 / 1 5 /2 0 High-Density EE CMOS Programmable Logic Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 100-pin version of the MACH435 in PQFP Up to 20 product terms per function, with XOR ■ 5 V, in-circuit programmable

Contextual Info: PRELIMINARY AMD* Am29LV004T/Am29LV004B 4 Megabit 524,288 x 8-Bit CMOS 3.0 Volt-only, Sectored Flash Memory • Data Polling and toggle bit DISTINCTIVE CHARACTERISTICS — Detects program and erase cycle completion ■ 2.7 to 3.6 volt, extended voltage range for read