02S752A Search Results

Contextual Info: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed

Contextual Info: F IN A L a A m 28F 512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 70 ns m aximum access time ■ ■ CMOS Low pow er consum ption Flasherase Electrical Bulk Chip-Erase

Contextual Info: PRELIMINARY Am29F400AT/Am29F400AB 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements

28F020

Abstract: AM28F020
Contextual Info: a Am28F020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High perform ance — 90 ns m aximum access time ■ ■ CMOS Low pow er consum ption — 100 nA m aximum standby current

Contextual Info: ADV MI CRO MEMORY 4ÛE D n 05S7S5Ô QQaGSbS t> • AMD4 T—4 6 —1 3 -2 5 Am27X128 Advanced Micro Devices 16,384 X 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS ■ ■ As an OTP EPROM alternative: - Factory optimized programming - Fully tested and guaranteed

programming AM29F400

Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
Contextual Info: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements

Contextual Info: Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Blt CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High performance ■ CMOS low power consumption ■ — 30 mA maximum active current — 100 nA maximum standby current

Am2BF010A

Abstract: to525 Transistor 2SC 2166
Contextual Info: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■

3251b

Abstract: Am29F040 29F040 3251L AM29F040-75JC AM29F040A
Contextual Info: P R E L IM IN A R Y Am29F040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ — Minimizes system level power requirements ■ Com patible w ith JEDEC-standard com mands

Contextual Info: F IN A L Am29F100T/Am29F100B AdvaM n££ 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ — M inimizes system level power requirements

Contextual Info: ADV MICRO {MEMORY} Tb D E | 02S7S2Û DDEbSST Am93L469 5 1 2 x9 TTL Low-Power Tag Buffer Am93L469 ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS • • • 45-ns address to comparator output MATCH Replaces six or more integrated circuits with a single device

Contextual Info: P R E L IM IN A R Y Am28F256A Advanced Micro Devices 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ High perform ance ■ CM OS low pow er consum ption — 30 m A maximum active current

Contextual Info: a Advanced Micro Devices Am27X256 256 Kilobit 32,768 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: — Factory optimized programming — Fully tested and guaranteed ■ As a Mask ROM alternative: — Shorter leadtime

Contextual Info: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements

Contextual Info: PRELIMINARY- a Advanced Micro Devices A m 29F 016 16-Megabit 2,097,152 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ Embedded Program A lgorithm s — Automatically programs and verifies data at

Contextual Info: PRELIM INARY a A m 2 9 F 1 0 0 T /A m 2 9 F 1 OOB 1 Megabit 131,072 x 8-Bit/65,536 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ±1 0 % write and erase, read — Minimizes system level power requirements