AM28F020 Search Results

AM28F020

Contextual Info: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

Am26F020

Contextual Info: FINAL Am28F020 Advanced 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory n j ïie ls DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption ■ ■ Compatible with JEDEC-standard byte-wide

Contextual Info: AMDEI Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current

28F020A

Abstract: 28F020T
Contextual Info: FIN A L a Am28F020A Advanced Micro Devices 262,144 x 8-Bit CMOS Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High perform ance - 90 ns m aximum access time, I CMOS low power consum ption - 30 m A m aximum active current - 100 nA m aximum standby current

Contextual Info: a Am28F020A Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power

Contextual Info: AMD£I Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — A ccess tim es as fast as 70 ns ■ CMOS low power consumption — 30 mA m axim um active current

28F020

Abstract: AM28F020
Contextual Info: a Am28F020 Advanced Micro Devices 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High perform ance — 90 ns m aximum access time ■ ■ CMOS Low pow er consum ption — 100 nA m aximum standby current

AM28F020

Abstract: qu34 A03404
Contextual Info: Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ ■ ■ CMOS Low power consumption ■ — 100 n A m a xim um s ta n d b y c u rre n t Flashrite Programming

AM28F020

Abstract: 32 pin EPROM 2 megabit flash memory am28f020-150
Contextual Info: AMENDMENT Am28F020 Data Sheet 1996 Flash Products Data Book/Handbook INTRODUCTION This amendment supersedes information regarding the Am28F020 device in the 1996 Flash Products Data Book/Handbook, PID 11796D. This document includes replacement pages for the Am28F020 data sheet,

Contextual Info: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

Contextual Info: FINAL AM D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

am28F020

Abstract: 28F020
Contextual Info: ADV MI CRO MEMORY 4ÖE D Advance Inform ation m 0 2 S7 SEÖ OÜ3 D7 4b T • AMD4 T-46-13-27 Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption

am28f020-95

Abstract: M28F020
Contextual Info: a A dvance In fo rm a tio n Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ ■ Flasherase or Embedded Erase™ Electrical Bulk Chip-Erase - Two second typical chip-erase

Program Overview

Abstract: AM28F020 am28f020 data sheet hot electron devices
Contextual Info: FINAL Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current

AMD am2 socket pinout

Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Contextual Info: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current

AM28F020

Contextual Info: f !NAL AMDH Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase

M28F020

Contextual Info: FINAL A M D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

Contextual Info: AMDEI Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

Contextual Info: FINAL AMD£I Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance

PEB 2261

Abstract: tl 2262 am
Contextual Info: F IN A L Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro D evices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current

Contextual Info: FINAL AMD£I Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

Contextual Info: AMD£I Am28F020 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V t o V c c +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns

PEB 2261

Abstract: 0034D A03407
Contextual Info: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current