DA104 Search Results

motorola bridge rectifier mda

Abstract: FW-600 FB600 MDA942A-3 10DB2P GENERAL INSTRUMENT MDA942A-2 MDA942A-6 10DB1P MDA942A-1
Contextual Info: R A T IN G S A N D EL E C T R IC A L C H A R A C TE R ISTIC S K BD 005 KBD02 KBD04 KBD06 KBD08 KBD10 M a x R e c u rre n t Peak Reverse V o lta g e 50 200 600 V 35 140 420 800 560 1000 M ax R M S B ridge In p u t V o lta g e M ax D C B lo c k in g V o lta g e

21545

Contextual Info: ADVANCE INFORMATION Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications

Contextual Info: PRELIMINARY Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 1.8 to 2.2 V for read, program, and erase operations — Ideal for battery-powered applications

Contextual Info: DA100ERW Series Low Cost, Miniature 1W SIP, Wide Input DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input

Contextual Info: ADVANCE INFORMATION A M D ii Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

DA1042

Abstract: DA1043 DA1041
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Datasheet 2.488 Gb/s ATM/SDH/SONET STM-16/STS-48 Mux/Demux and Section Terminator IC Chipset VSC8023/VSC8024 Features VSC8024 DEMUX VSC8023 (MUX) • SDH/SONET compliant multiplexing of four byte-wide STM-4/STS-12 data streams into one

29SL800C

Contextual Info: PRE LIM IN A R Y AMD il Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

B101S

Abstract: B2510 MVM12 br68 204 RL1N4004 HS607
Contextual Info: ALPHABETICAL INDEX PAGE PA R TS PAGE PA RTS NO. NO. NO. NO. PAGE PA RTS NO. NO. IW. . 102 1N4942G . 192 B R 1010 . 166 06102S . . 102 1N4944 . 80 B R 102 . 166

851 a12 b1a

Abstract: 2D 8c
Contextual Info: 11 111 91". 1B141". 11 17 11C$*1 "313 *19881"1#174  12+1 $1+ %&1 <-80-81/21'- 12D8BC%9*B1 111111111111111111 1 111111111234567898AB1848A1 11111111111111111111111111111111111 CDEFD1 1 1 121211 1

Contextual Info: ADVANCE INFORMATION A M D ii Am29SL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations ■

Contextual Info: PRELIMINARY AMD£I Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered

Contextual Info: PRELIMINARY AMD£I Am29LV800BT/Am29LV800BB 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications

29F400BB

Abstract: 29F400BT 29F400 amd 20185 am29f400bb 29f400B F400BB AM29F400BT
Contextual Info: T H iiimiiiriiiiiM T AMDS Am29 F400BT/Am29 F400BB 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation tor read, erase, and program operations

MH1SS1

Abstract: MHB4011 MH5400S Katalog tesla diod C520D A244D MAC198 MA3006 KF520 B260D
Contextual Info: Prehled diskrétních polovodicovÿch soucástek a dalsích dovâzenÿch typú z nèkdej si RVHP TRANZISTORY TYRISTORY • TRIAKY • DIAKY DIODY • LED • DISPLEJE OPTOCLENY a dalsí prvky . spolu s náhradami . a nej pouzívanéj sí standardní zahranicní soucástky

AM29 FLASH

Contextual Info: PRELIMINARY AMDil Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Automatically programs and verifies data at

A09 N03

Abstract: T14 N03
Contextual Info: Preliminary Datasheet 2.488 Gb/s ATM/SDH/SONET STM-16/STS-48 Mux/Demux and Section Terminator 1C Chipset VSC8025/VSC8026 Features VSC8025 MUX • SDH/SONET compliant multiplexing of four byte-wide STM-4/STS-12 data streams into one serial STM-16/STS-48 data stream

MIAL capacitor

Abstract: DA1042 BL DC 80 M02
Contextual Info: SEMICONDUCTOR CORPORATION Datasheet 2.488 Gb/s ATM/SDH/SONET STM-16/STS-48 Mux/Demux and Section Terminator 1C Chipset VSC8023/VSC8024 Features VSC8024 DEMUX VSC8023 (MUX) • SDH/SONET compliant multiplexing of four byte-wide STM-4/STS-12 data streams into one

dA76* transistor

Abstract: OVF20 WT6016 DA60 DDC2B ovf10 DA87 DA86 DA107 da76 transistor
Contextual Info: WT6016 Digital Monitor Controller Ver. 1.51 Jul-31-1998 GENERAL DESCRIPTION The WT6016 is a member of WT60XX microcontroller family. It is specially designed for digital controlled multi-sync monitor. It contains 8-bit CPU, 16K bytes ROM, 288 bytes RAM, 14 PWMs,

48-pin TSOP standard outline

Abstract: 48-pin TSOP I flash memory 48-pin TSOP standard dimensions
Contextual Info: ADVANCE INFORMATION Am29LV200T/Am29LV200B 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended operating voltage range — 2.7 to 3.6 V for read and write operations ■ Data Polling and toggle bit

am29F800

Abstract: am29f8008 Am29F800T
Contextual Info: PRELIMINARY Am29F800T/Am29F800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Compatible with JEDEC standards

am29lv8008

Abstract: am29lv800 AMD 29LV800 AMD29LV800 29LV800 AM29LV800B-100EC SA11 SA12 SA13 SA14
Contextual Info: PRELIMINARY Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered

Contextual Info: •■.a ■A’■ MF CRH A’ AMD3 Am29LL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 2.2 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ Single power supply operation — 2.2 to 2.7 volt read and write operations for battery-powered applications

29f016b

Abstract: AM29F016B
Contextual Info: P R E L IM IN A R Y AMDB A m 2 9 F 0 1 6 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • — Embedded Program algorithm automatically writes and verifies bytes at specified addresses 5.0 V ± 10%, single power supply operation