MGF4918D
Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Contextual Info: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F
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gd-16gd-15gd-18mgf4314d+10mgf4316dmgf4317dmgf4318dmgf4314e12mgf4918dmgf4919fmgf4919mgf4319fmgf-4317dmgf4914d
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c 1181 H
Abstract: lD-10mA
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs F ET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION T he M GF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:millimeters Mobility T ransistor) is designed for use in L to Ku band amplifiers. T he plastic mold package offer high cost performance, and has a
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mgf4714cpgf4714cpgd-22c 1181 h+1ld-10ma
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MGF4313
Abstract: MGF4919
Contextual Info: LOW NOISE InGaAs H EM T M G F4xxxx Series Freq. GHz NFmin. (dB) 12 0 .8 0 0 .5 5 11.5 GG Palette 12 11.5 Palette 12 0 .4 5 11.5 GG GG 12 0 .7 5 0 .6 5 11.5 IG Palette 12 11.5 IG Palette I T yp ical C haracteristics 12 0 .5 5 11.5 IG MGF4714AP NH3F4814E MGF4918E
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m6f4314mgf4313emqf43t9iemof441+7mgf44i7dmgf4714apnh3f4814emgf4918emgf4919emgf4313mgf4919
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MGF4714AP
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714AP low-noiseHEMT High Electron Mobili ty Transistor is designed for use in X band amplifiers. The plastic mold package offer high cost performance,
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mgf4714ap12ghz |
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InGaAs HEMT mitsubishi
Abstract: MGF4714
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT | DESCRIPTION The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili ty Transistor is designed fo r use in X band am plifiers. The plastic m old package offer high cost perform ance,
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GM 2310 A
Abstract: low noise hemt transistor MGF4714CP L to Ku GAAS L to Ku band amplifiers transistor GC 40103 HEMT
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP OUTLINE DRAWING low-noise HEMT(High Electron Unit:m illim eters Mobility Transistor) is designed for use in L to Ku band amplifiers. The plastic mold package offer high cost performance, and has a
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mgf4714cp12ghzgd-22gm 2310 a+6low noise hemt transistorl to ku gaasl to ku band amplifierstransistor gc40103hemt
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MGF4714AP
Abstract: FET 748 low noise x band hemt transistor 251C
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> o q iv ö ö ? h&& MGF4714AP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCR IPTIO N The M G F 4 7 1 4 A P lo w -n o is e H E M T H ig h Electron M o bili ty Transistor is designed fo r use in X band am plifiers. Th e plastic m old' package o ffer high cost perform ance,
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mgf4714apgf4714apfet 748low noise x band hemt transistor+1251c
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low noise hemt transistor
Abstract: MGF4714CP InGaAs HEMT mitsubishi
Contextual Info: MITSUBISHI SEMICONDUCTOR GaAs FET MGF4714CP PLASTIC MOLD PACKAGED LOW NOISE InGaAs HEMT DESCRIPTION The MGF4714CP low-noise HEMT High Electron Mobility OUTLINE DRAWING Unit:millimeters (0.6 Transistor) is designed for use in L to Ku band amplifiers. 1 The plastic mold package offer high cost performance, and has a
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mgf4714cp12ghzlow noise hemt transistoringaas hemt mitsubishi |
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Contextual Info: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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spp02n60spp03n60spp04n60spp07n60+13spp11n60spp20n60spw11n60spw20n60spw47n60spp02n80mgf4919gsp*02n60spp11n80to-220 smdmgf1601mgf0905aspw11n80
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Contextual Info: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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m6sta-005va/wa/samf-156sta-006va/wa/samf-156sra-002va/wa/samf-622sta-004va/wa/sa+16mf-622sta-005va/wa/samf-622sta-006va/wa/samf-622sra-002va/wa/samf-2500sta-002va/wa003va/wa004va/wac42v5964mgf1302 transistormgf1601mgfc1402m57721m67760lch2 marking sot-89 mmic2sc5125mitsubishi m57710-am68776
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MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
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mgf1302mgf1303bmgf1323mgf14+15mgf1412bmgf1403bmgf1423bmgf1425bmgf1902bmgf1903bmgf4919gmgf4919mgf0907b14512hmgf4316gmgfc45v2527mgf1923mgfc38v3642mgf0904a
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2sa11152sa12352sa1235a2sa1282+162sa1282a2sa12832sa12842sa12852sa1285a2sa1286m52777spm54630pm38881m2m5932057704lm38173m6sf15dxzm34236m37204m854630p
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Contextual Info: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2sa19772sa19782sc23512sc3355+162sc33572sc35452sc35832sc35852sc40932sc4094mrf947t1 equivalentmrf947t1 equivalent transistornj1006bfp320fll120mkfll101memgf4919gfujitsu gaas fet fhx76lphpma-2086mmbr521l
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