MGF4918D
Abstract: MGF4314D MGF4919F MGF4318D MGF4316D MGF4919 MGF4319F MGF4317D MGF-4317D MGF4914D
Contextual Info: LOW NOISE InGaAs HEMT M G F 4 x x x x Series T y p ic a l C h aracteristics Type MGF4314D MGF4316D MGF4317D MGF4318D MGF4314E MGF4318E MGF4316F MGF4319F MGF4416D MGF4417D MGF4418D MGF4511D MGF4714AP MGF4914D MGF4916D MGF4917D MGF4918D MGF4914E MGF4918E MGF4916F
|
OCR Scan
|
gd-16gd-15gd-18mgf4314d+10mgf4316dmgf4317dmgf4318dmgf4314e12mgf4918dmgf4919fmgf4919mgf4319fmgf-4317dmgf4914d
|
PDF
|
MGF4919G
Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10
|
OCR Scan
|
mgf1302mgf1303bmgf1323mgf14+15mgf1412bmgf1403bmgf1423bmgf1425bmgf1902bmgf1903bmgf4919gmgf4919mgf0907b14512hmgf4316gmgfc45v2527mgf1923mgfc38v3642mgf0904a
|
PDF
|
M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Contextual Info: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
|
OCR Scan
|
2sa11152sa12352sa1235a2sa1282+162sa1282a2sa12832sa12842sa12852sa1285a2sa1286m52777spm54630pm38881m2m5932057704lm38173m6sf15dxzm34236m37204m854630p
|
PDF
|
MGF4310
Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
Contextual Info: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.
|
OCR Scan
|
mgfc4410mgf4310mgf4910200um+128e-30mgf4914e-01mgf4918e-0112ghzmgf4914cmgf4318e-01mgf4918dmgf4914mgf4917mgfc4418mgfc4416mgf4318
|
PDF
|
MGF4310
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .
|
OCR Scan
|
4310ef4319emgf4310emgf4314e+3mgf4318egf4319emgf4310
|
PDF
|
F4310E
Abstract: F4314E mitsubishi application mg series gaas
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F4310E series su per-lo w -n oise HEMT High Electron M o bility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic
|
OCR Scan
|
f4310e4310ef4314emgf4318e+1mitsubishi application mg series gaas
|
PDF
|