MGF4310
Abstract: MGF4910 MGF4914C MGF4318E-01 MGF4918D MGF4914 MGF4917 MGFC4418 MGFC4416 MGF4318
Contextual Info: Die_MGFC4410 SERIES Package MGF4310 SERIES MGF4910 SERIES a ^MITSUBISHI ELECTRONIC DEVICE GROUP D Series - 0.25um X 200um DESCRIPTION “T“ GATE STRUCTURE The super low noise HEMT device family is designed for applications requiring high performance acheiving ultra low noise figures.
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mgfc4410mgf4310mgf4910200um+128e-30mgf4914e-01mgf4918e-0112ghzmgf4914cmgf4318e-01mgf4918dmgf4914mgf4917mgfc4418mgfc4416mgf4318
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MGF4317D
Abstract: MGF-4317D MGF4310 MGF4316D MGF4318D 4310D
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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f4310dmgf4310d12ghzgf4314d+9gf4316df4317dgf4318d4310dmgf4317dmgf-4317dmgf4310mgf4316dmgf4318d
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MGF4316F
Abstract: MGF4319F MGF4310 MGF4319 251C M5M27C102P
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310F Series S U P E R LOW NOISE InGaAs HEMT D ESC R IP T IO N O U TLIN E DRAWING The MGF4310F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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mgf4310f12ghzmgf4319fmgf4316f+7m5m27c102prv-151048576-bit65536-w0rdmgf4310mgf4319251c
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MGF4310
Abstract: MGF4314D MGF4318D MGF4310D MGF4316D MGF4317D M5M27C102P MGF4317 MGF4318 MGF431
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4310D Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The MGF4310D series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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mgf4310d12ghzmgf4314dmgf4316d+8mgf4317dmgf4318dm5m27c102prv-15mgf4310mgf4317mgf4318mgf431
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MGF1200
Abstract: MGF4310 MGF1100 MGF1412 MGF4301 MGF1304 MGF7003 MGF1102 MGF1302 MGF4305A
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> SYMBOL ON PACKAGE EXAMPLE OF SYMBOL ON MICRO DISK PACKAGE W ithou t bottom bar w ith b o tto m bar Blue A p r. O o t. Orange M ay N ov. B lack June D ec. Red July Jan . Green A ug. Feb. Brown S ep. M a r. « L e f t side c h a ra c te r in d ic a te s th e type num ber.
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mgf1102mgf1302mgf1303bmgfi323+14mgf1402bmgfi412bmgf1403bmgf1423bmgfi425bmgfi902bmgf1200mgf4310mgf1100mgf1412mgf4301mgf1304mgf7003mgf4305a
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FHC30LG
Abstract: ne72089 KC535C NE388-06 AL307BM IC 78L12 SOT89 KC535B AL307 79L05 hearing aid lm358
Contextual Info: RF TRANSISTORS Type P - p- n-p N - n-p-n MMBR5031 2SA1778 2SC3770 2SC4269 MMBR5179 2SC3837K 2SC3545 2SC3771 2SA1669 2SC4364 2SC4270 2SC4365 2SC3838K BFS17,BFS17A 2SC3841 BFR92A BFR93 2SC4569 BFR93P 2SC3774 BFR92P 2SC3775 BFR93A BFR92 2SC4568 2SC4857 MMBR911
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mmbr50312sa17782sc37702sc4269+16mmbr51792sc3837k2sc35452sc37712sa16692sc4364fhc30lgne72089kc535cne388-06al307bmic 78l12 sot89kc535bal30779l05hearing aid lm358
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MGF4310
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .
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4310ef4319emgf4310emgf4314e+3mgf4318egf4319emgf4310
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MGF4310
Abstract: 6020M f491
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F4910F Series S U P E R LOW NOISE InGaAs HEMT DESCRIPTION The M GF4910F series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic
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f4910fgf4910fmgf4310f12ghz+7gf4919fgf4916f27c102prv-15mgf43106020mf491
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