MG200Q1JS Search Results

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE M G 2 Q Q SILICON N CHANNEL IGBT n 1 K m m w r i n • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f —O.S^s Max. tr r = 0.5/'-?s (Max.) • Low Saturation Voltage

MG200Q1JS40

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 J S4 0 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/^s Max. trr = 0.5/^s (Max.) • Low Saturation Voltage Unit in mm • v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG200Q1JS40 MG200 Q 1 J S4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage

MG200Q1JS40

Abstract: mg200q1js
Contextual Info: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode

e2gl

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1 JS40 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f= 0 .5 ^ s Max. U nit in mm trr = 0.5,«s (Max.) • Low Saturation Voltage : VCE (sat) = 4-0V (Max.)

Contextual Info: T O S H IB A MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1JS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: MG200Q1JS40 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . CHO PPER A P P L IC A T IO N S . • • • • • High Input Impedance High Speed : tf=0.5/vs Max. trr = 0.5ps (Max.) Low Saturation Voltage : VCE (sat) = 4.0V (Max.) Enhancement-Mode

MG200Q1JS40

Contextual Info: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

MG200Q1JS40

Contextual Info: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

S5J53

Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Contextual Info: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG40001US41

Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50
Contextual Info: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13If*Sm * ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412

G50Q2YS40

Abstract: MG8Q6ES42 GT8Q102 mg300q1us41 GT60M301 MIG50J904H gt15j103 MIG30J103H MG25Q6ES50A mg150q1js
Contextual Info: TOSHIBA [1 ] Product List [ 1 ] Product List Product No. GT10G101 GT10J301 GT10J311 GT10Q301 GT10Q 311 GT15G101 GT15J101 GT15J102 GT15J103 SM GT15Q101 GT15Q301 GT15Q 311 GT20D101 GT20D201 GT20G101 GT20G101 (SM) GT20G102 GT20G102 (SM) GT20J301 GT20J311 GT25G101

2SA1930 2sc5171

Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Contextual Info: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228