MG200Q1 Search Results

Contextual Info: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .

Contextual Info: MG200Q1ZS40 HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S. C H O PPER A PPLIC A TIO N S. • • • • • High Input Impedance High Speed : tf=0.5,-/s Max. trr = 0.5,i/s (Max.) Low Saturation Voltage ; VCE (sat) = 4-0v (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

MG200Q1US41

Contextual Info: TO SHIBA MG200Q1US41 M G 2 0 0 Q 1 US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf=0.5/^s Max. : trr = 0.5/^s (Max.) Low Saturation Voltage

Contextual Info: TO SHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage

Contextual Info: T O S H IB A MG200Q1ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 Z S 4 0 Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

MG200Q1US51

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

Contextual Info: MG200Q1ZS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS40 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs max trr = 0.5µs (max) Low saturation voltage : VCE (sat) = 4.0V (max) Enhancement-mode

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage ; v Uifi (sat) —°-ovuviaJi.;

MG200Q1US41

Abstract: mg200q1us
Contextual Info: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE M G 2 Q Q SILICON N CHANNEL IGBT n 1 K m m w r i n • w HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f —O.S^s Max. tr r = 0.5/'-?s (Max.) • Low Saturation Voltage

MG200Q1JS40

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200 Q 1 J S4 0 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf=0.5/^s Max. trr = 0.5/^s (Max.) • Low Saturation Voltage Unit in mm • v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG200Q1JS40 MG200 Q 1 J S4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf= 0.5/iS Max. trr = 0.5,«s (Max.) Low Saturation Voltage

MG200Q1JS40

Abstract: mg200q1js
Contextual Info: MG200Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1JS40 Unit: mm High Power Switching Applications Chopper Applications High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.) Enhancement-mode

MG200Q1ZS11

Contextual Info: MG200Q1ZS11 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1ZS11 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 1.0µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 2.7V (Max.)

Contextual Info: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

e2gl

Contextual Info: TOSHIBA MG200Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1 JS40 HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • High Input Impedance • High Speed : t f= 0 .5 ^ s Max. U nit in mm trr = 0.5,«s (Max.) • Low Saturation Voltage : VCE (sat) = 4-0V (Max.)

MG25M1BK1

Abstract: MG30M1BN1 MG200M1FK1 MG200Q1UK1 MG100Q MG50M1BK1 MG20Q6EK1 MG50Q2YK9 EK1100
Contextual Info: Bipolar Darlington 2 Connection Vceo(SUS) (V) 10 15 20 BK 25 Maximum Rating M A) 50 MG25M1BK1 MG50M1BK1 75 100 150 200 300 MG75M1BK1 1000 MG30M1BN1 (SINGLE) FK MG200M1FK1 MG300M1FK1 1000 MG200M1UK1 MG300M1UK1 1200 MG200Q1UK1 MG300Q1UK1 MG300M1UK2 UK 1400

MG200Q1US51

Abstract: TV-19 tlf 106
Contextual Info: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)

Contextual Info: T O SH IB A MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

ss125c

Contextual Info: TOSHIBA MG200Q1ZS11 MG2 0 0 Q 1 Z S 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=1.0,«s Max. trr = 0.5/us (Max.) Low Saturation Voltage : V c e (sat) = 2.7V (Max.)