MG200Q1US Search Results

Contextual Info: TOSHIBA MG200Q1US51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG200 1 US51 H IG H P O W E R S W IT C H IN G AP PLIC A TIO N S M O T O R C O N T R O L A P P L IC A T IO N S • H ig h I n p u t Im p ed an ce • H i g h s p e e d : tf = 0 .3 /is M a x .

MG200Q1US41

Contextual Info: TO SHIBA MG200Q1US41 M G 2 0 0 Q 1 US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf=0.5/^s Max. : trr = 0.5/^s (Max.) Low Saturation Voltage

Contextual Info: TO SHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max. @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max.)

transistor JSW

Abstract: jSw Diode
Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: MG200Q1US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • • • • High Input Impedance High Speed : tf=0.5//s M ax. : trr = 0.5//s(Max.) Low Saturation Voltage : VçE(sat) =4.0V (Max.) Enhancement-Mode The Electrodes are Isolated from Case.

MG200Q1US51

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

Contextual Info: MG200Q1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US51 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode

Contextual Info: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage ; v Uifi (sat) —°-ovuviaJi.;

MG200Q1US41

Abstract: mg200q1us
Contextual Info: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE (sat) = 4.0V (Max.)

MG200Q1US51

Abstract: MG200Q1
Contextual Info: TOSHIBA MG200Q1US51 M G 2 0 0 Q 1 US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)

MG200Q1US51

Abstract: TV-19 tlf 106
Contextual Info: TO SHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. @Induetive Load • Low Saturation Voltage : VCE (Sat) = 3.6V (Max.)

Contextual Info: T O SH IB A MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US51 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q1US41 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2-M 4 • • High Input Impedance High Speed : tf= 0.5/iS Max. : trr = 0.5,us (Max.) Low Saturation Voltage

Contextual Info: MG200Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG200Q1US41 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) l Low saturation voltage : VCE (sat) = 4.0V (Max.)

MG200Q1US1

Contextual Info: GTR MODULL SILICON N CHANNEL IGBT MG200Q1US1 HIGH POWER SWITCHING APPLICATIONS. U n i t i n mm MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p e d a n c e • H igh S p e e d : t f = 0 . 5 u s M ax . t r r =0.5iis(Max.) • Low S a t u r a t i o n V o l t a g e : V^jr^s a t )= 4 . 0V (M ax. )

TRANSISTOR BC 629

Abstract: S408 S408 diode
Contextual Info: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 2 0 0 Q 1 US41 U nit in mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS 2 -m • • • High Input Impedance High Speed : tf= 0.5//s Max. : trr = 0.5,us (Max.) Low Saturation Voltage

Contextual Info: TOSHIBA MG200Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M r, 7 n n n 1 n <;n 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed tf —0.5//S Max. : (Max.) Low Saturation Voltage * v CE(sat) = 4*ov (Max.)

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

MG15J6ES40

Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4
Contextual Info: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40

MG200J2YS50

Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50
Contextual Info: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)

IGBT 200A 1200V

Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

GT80J101

Abstract: MG75Q2YS40 MG360V1US41 MG100Q2YS42 MG75J6ES50 GT60M301 MG15J6ES40 MG300Q2YS40 MG150Q2YS40 mg100j6es5
Contextual Info: • INDEX Page , Discrete Types Page Page MG300J2YS50 . 214-219 MG100Q1JS40 GT8J101 . . 69-71 MG400J1US51 . 220-225 MG100Q1ZS40 . 403-407 GT8J102 SM . . 72-75 MG400J2YS50 . 226-231 MG150J1ZS50 . . 408-412