LDQB Search Results
LDQB Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HYR1612820G-653
Abstract: HYR1612820G-745 HYR1612820G-840 HYR1612820G-845 HYR1812820G-653 HYR1812820G-745 HYR1812820G-845 INFINEON, B20 A17 INFINEON marking a86
|
Original |
16xx20g/hyr18xx20ghyr1612820g-653hyr1612820g-745+8 | |
|
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V |
Original |
ms18r1622288mbit16mx18288mb+1 | |
|
Contextual Info: LP3985 www.ti.com SNVS087AB – MAY 2004 – REVISED NOVEMBER 2011 LP3985 Micropower, 150mA Low-Noise Ultra Low-Dropout CMOS Voltage Regulator Check for Samples: LP3985 FEATURES limit 1 • 2 • • • • Miniature 5-I/O micro SMD and SOT-23-5 package Logic controlled enable |
Original |
lp3985snvs087ab150maot-23-5 | |
circuit of rowa television
Abstract: toshiba b54
|
OCR Scan |
432-word18-bittc59rm818mbb2m-wordx18+6 | |
|
Contextual Info: THMR2N16-6/-7/-8 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 268,435,456-WORD BY 16-BIT 512M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2N16 is a 268,435,456-word by 16-bit direct rambus dynamic RAM module consisting of 16 TC59RM816MB and Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
thmr2n16-6/-7/-8456-word16-bitthmr2n16+4 | |
MIG toshiba
Abstract: ABB B45 THMR1E16-6 THMR1E16-7 B75 ABB hiab 837 B34 toshiba mig
|
OCR Scan |
thmr1e16-6/-7/-8128m-word600mhz711mhz+11 | |
HR128E08B
Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
|
Original |
128/144mb128mb144mbhr128n08e+7 | |
144MB
Abstract: B641 High Connection Density
|
Original |
128mb144mbhs064n04ehs064n04d+8 | |
Direct-Rambus-RIMM
Abstract: ic marking B48 750 B36 Transistor NEC 12d G100 MC-4R128CPE6C IC MARKING A60 6043b label LOT CODE NEC
|
Original |
mc-4r128cpe6c128m-byte64m-word16-bit+12 | |
MC-4R64FKE8S
Abstract: PD488588 PD488588FF
|
Original |
mc-4r64fke8sm01e0107e0140n30pd488588+1 | |
Direct-Rambus-RIMM
Abstract: MC-4R128FKE6D PD488588 PD488588FF
|
Original |
mc-4r128fke6d128m-byte64m-word16-bit+7 | |
EL B17Contextual Info: UGD128R16 8 08U6J(7J) Data sheets can be downloaded at www.unigen.com 256/288MB Bytes (128M x 16/18 bits) RAMBUS SO-RIMM MODULE 160 Pin SO-RIMM based on 8 pcs 8M x 16/18 RDRAM & 16K Refresh 128M x 16 bits, 128M x 18bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION |
Original |
ugd128r1608u6j256/288mb18bits+7 | |
SMI064RBSBD01
Abstract: SMI072RBSBD01 RSL 17
|
Original |
smi064rbsbd01smi072rbsbd01800mhzsmi064/72rbsad01+3 | |
RG25
Abstract: OKI RDRAM OKI RDRAM 18
|
Original |
smu128ubuauuusmu144ubuauuu128/144mbyte8mx16/18+4 | |
|
|
|||
SCK 183
Abstract: 128Mx16
|
Original |
ug7128r1616u6j18bits800mhz+5 | |
|
Contextual Info: TOSHIBA TH M R2 E4Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 18-BIT 128M Bytes Direct Rambus D RAM MODULE DESCRIPTION The THMR2E4Z is a 67,108,864-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM818MB Direct Rambus DRAMs on a printed circuit board. |
OCR Scan |
108f864-word18-bit864-wordtc59rm818mb+4 | |
toshiba a75
Abstract: ejdalf
|
OCR Scan |
864-word18-bittc59rm718mb64m-wordxl8+5 | |
|
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
Original |
mc-4r128fke8d128m-byte64m-word18-bit+5 | |
|
Contextual Info: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal |
Original |
mc-4r64fke8s-840m01e0107e0259n10 | |
smd marking code lcsb
Abstract: smd marking ldqb OFA1202 ldrb marking smd code marking LP3985 LDQB LDRB lcrb LCZB marking LCJB
|
Original |
lp3985150masmd marking code lcsbsmd marking ldqb+7 | |
|
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct RambusTM DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking |
Original |
mc-4r128fke8s128m-byte64m-word18-bit+3 | |
RDRAM RAMBUSContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
Original |
mc-4r256fke6d256m-byte128m-word16-bit+5 | |
Elpida MemoryContextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D-840 Direct Rambus DRAM RIMMTM Module 512M-BYTE 256M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other |
Original |
mc-4r512fke6d-840512m-byte256m-word16-bit+7 | |
|
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S-840 Direct Rambus DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking |
Original |
mc-4r128fke8s-840128m-byte64m-word18-bit+5 | |