MS18R1622 Search Results
MS18R1622 Datasheets (8)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| MS18R1622AH0-CK8 | Samsung Electronics | Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V | Original | 170.95KB | 14 | ||
| MS18R1622DH0-CK8 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 240.65KB | 14 | ||
| MS18R1622DH0-CM8 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 240.65KB | 14 | ||
| MS18R1622DH0-CN9 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 240.65KB | 14 | ||
| MS18R1622DH0-CT9 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit D-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 240.65KB | 14 | ||
| MS18R1622EH0-CK8 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 241.06KB | 14 | ||
| MS18R1622EH0-CM8 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 241.06KB | 14 | ||
| MS18R1622EH0-CT9 | Samsung Electronics | (16M x 18) * 2 pcs SO-RIMM Based on 288 MBit E-die, 32s Banks, 16k/32 ms Refresh, 2.5 V | Original | 241.06KB | 14 |
MS18R1622 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V |
Original |
ms18r1622288mbit16mx18288mb+1 | |
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Contextual Info: MS18R1622 4/8 EH0 RAMBUS MODULE SERIAL PRESENCE DETECT SO-RIMMTM Module SPD Specification based on 288Mb RDRAM(E-die, 32s banks) Version 1.0 May 2004 Change History Version 0.1 (Jan. ′04) -Preliminary First Copy Based on the SAMSUNG 288Mb D-die SO-RIMM Module SPD |
Original |
ms18r1622288mbms18r1628eh0-ct9/cm8/ck816mx18+1 | |
MS18R1622AH0-CK8
Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
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Original |
ms18r1622256/288mbit16mx18288mb+4 | |
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Contextual Info: MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R1622(4/8)EH0 |
Original |
ms18r1622288mbit16mx18288mb+1 | |
a80 marking code
Abstract: marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9
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Original |
ms18r1622288mbit16mx18288mb+11 | |
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Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Module Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Module Datasheet. |
Original |
ms18r1622256/288mbit288mbit1066mhz-35+3 | |
a80 marking code
Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
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Original |
ms18r1622288mbit16mx18288mb+11 | |
marking b61
Abstract: transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9
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Original |
ms18r1622288mbit16mx18288mb+11 | |
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Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning |
Original |
ms18r1622256/288mbit1066mhz-3516mx18+2 | |
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Contextual Info: MS18R1622 4/8 DH0 RAMBUS MODULE SERIAL PRESENCE DETECT SO-RIMM SPD Specification based on 288M RDRAM(D-die, 32s banks) Version 1.3 July 2002 Change History Version 1.3 (July. ′02) First Copy Based on the SAMSUNG 288Mb A-die based SPD -1- Version 1.3 July 2002 |
Original |
ms18r1622288mb16mx18k4r881869d-hct9/hcn9/hcm9/hcm8/hck8+2 | |
marking B44
Abstract: DH0 165
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Original |
ms18r1622256/288mbit16mx18288mb+3 | |
a74 marking code
Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
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Original |
ms18r1622256/288mbit288mbit1066mhz-35+11 |