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    144MB Search Results

    144MB Datasheets (1)

    Rambus
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    144MbRDRAMs
    Rambus Rambus SO-RIMM Module (with 64Mb RDRAMs) Original PDF 573.36KB 12
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    Panduit Corp EBV14-4MB-Q

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    Avnet Americas EBV14-4MB-Q Bulk 14 Weeks 250
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    RS EBV14-4MB-Q Bulk 250
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    Sager EBV14-4MB-Q 250
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    Infineon Technologies AG CY9AF144MBBGL-GE1

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    Infineon Technologies AG CY9AF144MBBGL-GK9E1

    ARM MCU, 32-bit, ARM Cortex-M3, 40 MHz, 256 Kilobytes, 32 Kilobytes, 96 Pins, FBGA - Trays (Alt: CY9AF144MBBGL-GK9E1)
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    Infineon Technologies AG CY9AF144MBPMC-G-JNE2

    Microcontroller 32-Bit CY9A140NB ARM Cortex-M3 RISC 288KB Flash 80-Pin LQFP Tray - Trays (Alt: CY9AF144MBPMC-G-JNE2)
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    Infineon Technologies AG CY9AF144MBPMC1-G-JNE2

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    144MB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HR128E08B

    Abstract: HR128E08C HR128E08D HR128E08E HR128N08C HR128N08D HR128N08E
    Contextual Info: 128 MB RIMMTM Module with 128/144Mb RDRAMs Direct Rambus RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and nonECC modules.


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    128/144mb128mb144mbhr128n08e+7hr128n08dhr128n08chr128n08bhr128e08ehr128e08dhr128e08chr128e08b PDF

    da53

    Abstract: HY5R128HC745 HY5R128HC840 HY5R128HC845 HY5R144HC653 HY5R144HC745 HY5R144HC840 HY5R144HC845 HY5R144HM745 HY5R144HM845
    Contextual Info: Direct RDRAM 128/144Mbit 256Kx16/18x32s Preliminary Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and


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    128/144mbit256kx16/18x32s128/144-mbit600mhz+12800mhzdl0059-00da53hy5r128hc745hy5r128hc840hy5r128hc845hy5r144hc653hy5r144hc745hy5r144hc840hy5r144hc845hy5r144hm745hy5r144hm845 PDF

    144MB

    Abstract: B641 High Connection Density
    Contextual Info: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


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    128mb144mbhs064n04ehs064n04d+8hs064n04chs064n04bhs064e04ehs064e04dhs064e04chs064e04bb641high connection density PDF

    Contextual Info: Preliminary GS81302T08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus


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    gs81302t08/09/18/36e-375/350/333/300/250165-bumpgs81302txx PDF

    GS81302D36E-250

    Contextual Info: GS81302D08/09/18/36E-375/350/333/300/250 144Mb SigmaQuadTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


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    gs81302d08/09/18/36e-375/350/333/300/250165-bump144mb81302dxx+1gs81302d36e-250 PDF

    Contextual Info: GS81302T08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


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    gs81302t08/09/18/36e-375/350/333/300/250165-bump144mbgs81302txx PDF

    Contextual Info: Preliminary GS81302S08/09/18/36E-333/300/250/200/167 144Mb Burst of 2 DDR SigmaSIO-II SRAM 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 4M x 36Features • Simultaneous Read and Write SigmaSIO Interface • JEDEC-standard pinout and package


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    gs81302s08/09/18/36e-333/300/250/200/167165-bump36features144mb+2gs866x36e-300t81302sxx PDF

    TOP SIDE MARKING OF MICRON

    Abstract: MT6V8M16F-4C MT6V8M16F1-3B MT6V8M16F1-3M MT6V8M16F1-4C MT6V8M18F1-3B MT6V8M18F1-3M MT6V8M18F1-4C ctm 512
    Contextual Info: ADVANCE 128Mb/144Mb: 8 MEG x 16/18 RDRAM RAMBUS DRAM MT6V8M16 - 256K x 16 x 32 banks MT6V8M18 - 256K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES FBGA Top View • High-speed 300 MHz, 356 MHz, and 400 MHz


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    128mb/144mbmt6v8m16mt6v8m1818-bit+13mt6v8m18f-3bmt6v8m18f-3cmt6v8m18f-4c144mrdramtop side marking of micronmt6v8m16f-4cmt6v8m16f1-3bmt6v8m16f1-3mmt6v8m16f1-4cmt6v8m18f1-3bmt6v8m18f1-3mmt6v8m18f1-4cctm 512 PDF

    Contextual Info: Preliminary GS81302T07/10/19/37E-400/375/333/300 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–300 MHz 1.8 V VDD 1.8 V or 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR Interface


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    gs81302t07/10/19/37e-400/375/333/300165-bumpgs81302txx PDF

    Contextual Info: Preliminary GS81302D19/37E-400/375 144Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 400 MHz–375 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


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    gs81302d19/37e-400/375165-bump144mbgs81302dx36e-400t+181302dxx PDF

    Contextual Info: Preliminary GS8128418/36B-250/200/167 119-BGA Commercial Temp Industrial Temp 8M x 18,4M x 36 144Mb S/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan


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    gs8128418/36b-250/200/167119-bga144mbx18/x36+181284xx PDF

    GS81302D36E-250

    Contextual Info: GS81302D08/09/18/36E-375/350/333/300/250 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 144Mb SigmaQuadTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Clocking and Addressing Schemes • Simultaneous Read and Write SigmaQuad Interface


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    gs81302d08/09/18/36e-375/350/333/300/250165-bump144mb81302dxx+1gs81302d36e-250 PDF

    Contextual Info: Preliminary GS81302S08/09/18/36E-333/300/250/200/167 144Mb SigmaSIOTM DDR -II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaSIO Interface • JEDEC-standard pinout and package


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    gs81302s08/09/18/36e-333/300/250/200/167165-bump144mbgs81302sx36e-300t+281302sxx165-bga PDF

    Contextual Info: Preliminary GS81284Z18/36B-xxxV 119-Bump BGA Commercial Temp Industrial Temp 144Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with


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    gs81284z18/36b-xxxv119-bump119-bga119-chnology+2144mb81284zxxxv PDF

    Contextual Info: GS81302R08/09/18/36E-375/350/333/300/250 144Mb SigmaDDRTM-II Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp 375 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


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    gs81302r08/09/18/36e-375/350/333/300/250165-bump144mbgs81302rxx PDF

    Contextual Info: GS81302T07/10/19/37E-450/400/350/333/300 144Mb SigmaDDRTM-II+ Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package


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    gs81302t07/10/19/37e-450/400/350/333/300144mb165-bumpgs81302t1937 PDF

    Contextual Info: GS8128418/36B-xxxV 119-Pin BGA Commercial Temp Industrial Temp 8M x 18, 4M x 36, 144Mb S/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan


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    gs8128418/36b-xxxv119-pin144mbx18/x36+28128418/36b-xxxv250mhz PDF

    Contextual Info: GS81302QT07/10/19/37E-318/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


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    gs81302qt07/10/19/37e-318/300/250/200144mb165-bump81302qt1937e PDF

    Contextual Info: GS81302Q07/10/19/37E-318/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


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    gs81302q07/10/19/37e-318/300/250/200144mb165-bump81302q1937 PDF

    Floppy connector 34 pin IDC to usb

    Abstract: NE2000 port/PS-2-2000F
    Contextual Info: HAWK HAWK HAWK HAWK HAWK Supports Intel Pentium and AMD CPUs up to 233MHz MMX Up to 256MB DRAM 256 or 512KB L2 Cache COAST 0-144MB Flash options (DiskOnChip) Up to 512KB SRAM PCI Local Bus SVGA for LCD and CRT 800x600, 1024x768, 1280x1024 resolutions


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    233mhz256mb512kb0-144mb+7800x6001024x7681280x102410base-tne2000floppy connector 34 pin idc to usbport/ps-2-2000f PDF

    da53

    Abstract: DB26 KM416RD8AC KM418RD8AC
    Contextual Info: KM416RD8AC D /KM418RD8AC(D) Direct RDRAM 128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Revision 1.01 October 1999 Page -2 Rev. 1.01 Oct. 1999 KM416RD8AC(D)/KM418RD8AC(D) Direct RDRAM™ Revision History Version 1.0 (July 1999) - Preliminary


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    km416rd8ac/km418rd8ac128/144mbitda53+2db26km418rd8ac PDF

    SAMSUNG MR18R162GMN0

    Abstract: A76 MARKING CODE MR18R162GMN0-CK8
    Contextual Info: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet


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    mr16r1624mr18r162402ver128/144mbit+8256/288mb100ps250ps200ps-711mhz/-600mhzsamsung mr18r162gmn0a76 marking codemr18r162gmn0-ck8 PDF

    CQ 1265

    Abstract: AN1021
    Contextual Info: GS81302QT07/10/19/37E-333/300/250/200 144Mb SigmaQuad-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


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    gs81302qt07/10/19/37e-333/300/250/200144mb165-bumpgs81302qtxxe-300t+381302qt1937ecq 1265an1021 PDF

    direct rdram

    Contextual Info: ADVANCE M l^ P n iv r I 144Mb: 8 MEG X 18 DIRECT RDRAM MT6V8M18 - 256K x 18 x 32 banks DIRECT RAMBUS c™ DRAM n o a nil For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • High-speed 300 MHz and 400 MHz clocks with 2x data


    OCR Scan
    144mbmt6v8m18direct rdram PDF