16MX18 Search Results

Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

MS18R1622AH0-CK8

Abstract: MS18R1624AH0-CK8 MS18R1628AH0-CK8
Contextual Info: MS18R1622 4/8 AH0-CK8 Preliminary Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Rev.1.0 Dec. 2001 Page 0 MS18R1622(4/8)AH0-CK8 Preliminary ( 16Mx18)*2(4/8)pcs Rambus RIMM based on 288Mb M-die, 32s banks,16K/32ns Ref, 2.5V

b41 Marking

Contextual Info: MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004 MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

a80 marking code

Abstract: marking A32 marking code B38 samsung electronics logo MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Module Datasheet. Page 0 Rev. 1.0 July 2002 MS18R1622(4/8)DH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

A76 MARKING CODE

Abstract: a77 package marking a80 marking code marking A32 marking A45 marking code B38 MR18R162WEG0-CM8 MARKING B17 MARKING CODE B82 marking a86
Contextual Info: Preliminary MR18R162WEG0 Change History Version 0.1 January 2004 * First copy. * Based on the 1.0 ver.(July 2002) 288Mbit D-die 32d RIMM Module Datasheet Page 0 Version 0.1 Jan. 2004 Preliminary MR18R162WEG0 (16Mx18)*32pcs RIMM Module based on 288Mb E-die, 32s banks,16K/32ms Ref, 2.5V

a80 marking code

Abstract: a64 marking code B58 608 diode 910 b34 MS18R1622EH0-CM8 MS18R1622EH0-CT9 MS18R1624EH0-CM8 MS18R1624EH0-CT9 MS18R1628EH0-CT9 MS18R1622EH0-CK8
Contextual Info: Preliminary MS18R1622 4/8 EH0 Revision History Version 0.1 (February 2004) - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Feb. 2004 Preliminary MS18R1622(4/8)EH0 (16Mx18)*2(4/8)pcs SO-RIMM™ based on 288Mb E-die, 32s banks,16K/32ms Refresh, 2.5V

a80 marking code

Abstract: MR18R162WDG0-CM8 B83 004 marking code B38 MR18R162WDG0 MR18R162WDG0-CK8 marking A70 marking code b84
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Module Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

a74 marking code

Abstract: MARKING B82 MARKING B83 a80 marking code B11 marking code Device marking code B12 B13 B14 B15 B16 marking A45 a64 marking code A79 marking code a86 diode
Contextual Info: MR18R162WDG0 Change History Version 1.0 July 2002 * First copy. * Based on the 1.1 ver.(July 2002) 288Mbit A-die 32d RIMM Datasheet Page 0 Version 1.0 July. 2002 MR18R162WDG0 (16Mx18)*32pcs RIMMTM Module based on 288Mb D-die, 32s banks,16K/32ms Ref, 2.5V

marking b61

Abstract: transistor marking A21 marking code b35 MS18R1622DH0-CK8 MS18R1622DH0-CM8 MS18R1622DH0-CN9 MS18R1622DH0-CT9 MS18R1624DH0-CM8 MS18R1624DH0-CM9 MS18R1624DH0-CT9
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. (July 2002) 288Mbit A-die SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V Overview

marking B44

Abstract: DH0 165
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

200-ball

Abstract: A79 marking code MN18R1628EF0 samsung resitor
Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Version 1.0 May 2004

a65 1021

Contextual Info: MR16R1622 4/8/G AF0(1) MR18R1622(4/8/G)AF0(1) Preliminary Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002)

direct rdram rac

Contextual Info: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit 32 Bit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 Bit RIMM Module Datasheet

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

Contextual Info: MS18R1622 4/8 EH0 RAMBUS MODULE SERIAL PRESENCE DETECT SO-RIMMTM Module SPD Specification based on 288Mb RDRAM(E-die, 32s banks) Version 1.0 May 2004 Change History Version 0.1 (Jan. ′04) -Preliminary First Copy Based on the SAMSUNG 288Mb D-die SO-RIMM Module SPD

RISC-Processor s3c2410

Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
Contextual Info: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH

SAMSUNG MR18R162GMN0

Abstract: A76 MARKING CODE MR18R162GMN0-CK8
Contextual Info: MR16R1624 6/8/C/G MN0 MR18R1624(6/8/C/G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet

SAMSUNG MR18R162GMN0

Abstract: MR18R162GMN0-CK8
Contextual Info: MR16R162C G MN0 MR18R162C(G)MN0 Change History Version 0.9 (January 2000) - Preliminary * First copy. * Based on the 1.02ver 128/144Mbit RDRAMs base RIMM Datasheet Version 1.0 (October 2000) - Preliminary * Based on the 1.0ver Rambus 256/288Mb RDRAMs base RIMM datasheet

357mhz

Contextual Info: MR18R1624 6/8/C/G MN0 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 288M RDRAM(M-die, 32s banks) Version 1.1a November 2000 Change History Version 1.1 (Oct. ′00) Based on the Direct RambusTM SPD Specification 1.1. Version 1.1a (Nov. ′00)

M1017

Abstract: IS49NLS18160
Contextual Info: IS49NLS93200,IS49NLS18160 288Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

marking code b84

Contextual Info: MN18R1624 8 EF0 MP18R1624(8)EF0 Preliminary Revision History Version 0.1 (February 2004) -Preliminary - First Copy - Based on the 1.2 ver. (Dec. 2003) 288Mbit D-die NexMod Module Datasheet. Page 0 Version 0.1 Feb. 2004 MN18R1624(8)EF0 MP18R1624(8)EF0 Preliminary

b58 468

Abstract: B58 608
Contextual Info: MR16R1624 8/G EG0 MR18R1624(8/G)EG0 Change History Version 0.1 (December 2003) - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Version 1.0 (May 2004) * Eliminate "Preliminary" Page 0 Version 1.0 May 2004

B83 004

Abstract: marking a86 b72 voltage regulator
Contextual Info: MN18R162 4 8DF0 MP18R162(4)8DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod. - Add the discription of index pin marking. - Correct the physical dimension of PGA NexMod.