288MBIT Search Results

MR16R1622

Abstract: HOT 624
Contextual Info: MR16R1622 4/8/G DF0 MR18R1622(4/8/G)DF0 Change History Version 1.0 (July 2002) * First copy. * Based on the 1.4 ver. (July 2002) 256/288Mbit A-die RIMM Module Datasheet Page 0 Version 1.0 July 2002 MR16R1622(4/8/G)DF0 MR18R1622(4/8/G)DF0 (16Mx16)*2(4/8/16)pcs RIMM Module based on 256Mb D-die, 32s banks,16K/32ms Ref, 2.5V

Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary

K4R571669D

Abstract: K4R881869D
Contextual Info: K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D K4R881869D for short channel 1066 MHz Direct RDRAM™

Contextual Info: MD16R1624 8/G DF0 - CN1 for 1200MHz MD18R1624(8/G)DF0 - CN1 for 1200MHz 32 Bit RIMM Module Change History Version 1.0 (January 2003) * First copy. * Based on Version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 1.0 January 2003 MD16R1624(8/G)DF0 - CN1 for 1200MHz

K4R571669D-FCK8

Abstract: K4R571669D-FCM8 K4R571669D-FCM9 K4R571669D-FCN9 K4R881869D-FCM9 K4R881869D-FCN9 K4R881869D-FCT9 k4r881869dfck
Contextual Info: Direct RDRAM K4R571669D/K4R881869D 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669D/K4R881869D Change History Version 1.4( July 2002) - First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets)

TC59LM818DMBI

Contextual Info: TC59LM818DMBI-37 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 I-version − 4,194,304-WORDS x 4 BANKS × 18-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM818DMBI is Network

Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. - Add 1066MHz-35 binning

Contextual Info: Preliminary K4R881869A for short channel 1066 MHz Direct RDRAM 256/288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Preliminary K4R881869A for short channel 1066 MHz Direct RDRAM™

Contextual Info: K4R881869A for short channel 1066 MHz Direct RDRAM 288Mbit RDRAM A-die 512K x 18bit x 32s banks Short channel Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R881869A for short channel 1066 MHz Direct RDRAM™ Change History Version 1.11( September 2001) - Preliminary

Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

marking B44

Abstract: DH0 165
Contextual Info: MS18R1622 4/8 DH0 Revision History Version 1.0 (July 2002) - Based on the 1.1 ver. 256/288Mbit RDRAMs(A-die) base SO-RIMM Datasheet. Rev. 1.0 July 2002 Page 0 MS18R1622(4/8)DH0 ( 16Mx18)*2(/4/8)pcs SO-RIMM based on 288Mb D-die, 32s banks,16K/32ms Refresh, 2.5V

MARKING CODE B82

Abstract: a87 marking Marking b66 marking a86 MARKING B83 marking a75
Contextual Info: MR18R162WAG0 Change History Version 1.0 January 2002 * First copy. * Based on the 1.0 ver. 288Mbit RIMM Module Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(January 2002) 288Mbit A-die 32d RIMM Module Datasheet * eliminate "Target" etc. Page 0

b72 voltage regulator

Abstract: marking A93 A75 marking code marking a86
Contextual Info: MN18R1624 8 DF0 MP18R1624(8)DF0 Revision History Version 1.0 (May 2003) - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMMTM Module Datasheet. Version 1.1 (Aug. 2003) - Add PGA type 144MB NexMod Module. - Add the discription of index pin marking.

K4R571669A-FCG6

Abstract: K4R571669A-FCK8 K4R881869A-FCG6 K4R881869A-FCK8 K4R881869A-FCM8
Contextual Info: Preliminary Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.11 June 2001 Page -1 Version 1.11 June. 2001 Preliminary Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.1( June 2001) - Preliminary

K4R881869D-FCT9

Abstract: K4R571669D-FCK8 K4R571669D-FCM8 K4R571669D-FCM9 K4R571669D-FCN9 K4R881869D-FCM9 K4R881869D-FCN9
Contextual Info: Direct RDRAM K4R571669D/K4R881869D 256/288Mbit RDRAM D-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669D/K4R881869D Change History Version 1.4( July 2002) - Preliminary - First Copy

K4R571669A-FCK8

Abstract: K4R881869A-FCK8 K4R881869A-FCM8 K4R881869A-FCM9 K4R881869A-FCN9 K4R881869A-FCT9
Contextual Info: Direct RDRAM K4R571669A/K4R881869A 256/288Mbit RDRAM A-die 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 Direct RDRAM™ K4R571669A/K4R881869A Change History Version 1.11( September 2001) - Preliminary - First Copy

Contextual Info: MR16R1622 4/8/G AF0 MR18R1622(4/8/G)AF0(1) Change History Version 1.1 (August 2001) * First copy. * Based on the 1.0ver Rambus 256/288Mbit RDRAMs base RIMM Datasheet Version 1.2 (February 2002) * Add 1066-35 binning Version 1.3 (April 2002) * Add 800-40 and 1066-32 binning

code A106

Abstract: a106 diode transistor marking A21 256-288 MBit Direct RDRAM a105 transistor MD18R162GAF0-CN9 MD18R1624AF0-CN9 marking a86
Contextual Info: MD16R1624 8/G AF0 MD18R1624(8/G)AF0 32 Bit RIMM Module Change History Version 1.0 (April 2002) * First copy. * Based on 1.0 version Rambus 256/288Mbit RDRAMs 32 bit RIMM Datasheet Version 1.1 (July 2002) * Based on the 1.0 ver.(April 2002) 256/288Mbit A-die 32 bit RIMM Datasheet

a74 marking code

Abstract: A37 diode marking .A55 transistor marking A21 256-288 MBit Direct RDRAM MS18R1622AH0-CK8 MS18R1624AH0-CK8 a92 614
Contextual Info: MS18R1622 4/8 AH0 Revision History Version 1.0 (December 2001) - First copy. - Based on the 1.1 ver.(August 2001) 256/288Mbit A-die RIMM Datasheet. Version 1.1(July 2002) - Based on the 1.0 ver.(December 2001) 288Mbit A-die SO-RIMM Datasheet. - Add 1066MHz-35 binning

Contextual Info: Preliminary Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0001 Rev.0.01 August 1, 2011 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the

82803AA

Abstract: MPS 1482 82801AA 82806AA P64H GBA ST1 AF439 A0000H-BFFFFH intel schematics
Contextual Info: R Intel 840 Chipset: 82840 Memory Controller Hub MCH Datasheet September 2000 Document Number: 298020-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual

DL0054

Abstract: toshiba memory "part numbers" TC59RM818MB-6 TC59RM818MB-7 TC59RM818MB-8 DB64
Contextual Info: TC59RM818MB-8,-7,-6 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Overview The Direct Rambus DRAMTM Direct RDRAMTM is a general-purpose high performance memory device suitable for use in a broad range of applications including computer memory, graphics, video and any other applications

processor cross reference ropb

Abstract: T45 to DB9 DB26 PD488588 PD488588FF uPD488588FF-C80-40-DH1
Contextual Info: DATA SHEET 288M bits Direct Rambus DRAM for High Performance Solution µPD488588FF-C80-40 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications

T45 to DB9

Abstract: DB26 PD488588 uPD488588FF-C60-53-DH1 uPD488588FF-C71-45-DH1 uPD488588FF-C80-45-DH1
Contextual Info: DATA SHEET 288M bits Direct Rambus DRAM µPD488588 512K words x 18 bits × 32s banks Description Features The Direct Rambus DRAM (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any