32MX18 Search Results

code A106

Abstract: MD18R3268AG0-CM8 MD18R3268AG0-CN1 MD18R3268AG0-CT9 MD18R326GAG0-CM8 MD18R326GAG0-CN1 MD18R326GAG0-CT9 serial presence detect samsung 2010 MARKING A106
Contextual Info: Preliminary MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 0.1 Sept. 2003 MD18R3268(G)AG0 Preliminary (32Mx18)*8(16)pcs 32 Bit RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

MARKING CODE 11gb

Contextual Info: MR18R326GAG0 Preliminary Change History Version 0.1 September 2003 - Preliminary * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Datasheet Page 0 Version 0.1 Sept. 2003 MR18R326GAG0 Preliminary (32Mx18)*16pcs RIMMTM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

a80 marking code

Abstract: MN18R3268AF0-CM8 marking A97 b72 voltage regulator marking A99 marking b88 marking code B38 MARKING CODE B82 B100 MN18R3268AF0
Contextual Info: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2002) 288Mbit D-die NexMod Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

A74 marking

Abstract: a80 marking code MS18R3266AH0-CT9 a74 marking code diode code B74 marking A32 marking code B38
Contextual Info: MS18R3266AH0 Preliminary Revision History Version 0.1 November 2003 - Preliminary - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Page 0 Rev. 0.1 Nov. 2003 MS18R3266AH0 Preliminary (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

marking A45

Abstract: a80 marking code marking a86 B14 marking code B58 468 diagram marking A32 marking code B38 MR18R326GAG0 MR18R326GAG0-CM8 MR18R326GAG0-CT9
Contextual Info: MR18R326GAG0 Change History Version 1.0 Mar. 2004 * First copy. * Based on the 1.0 ver. (July 2002) 256/288Mbit D-die RIMM Module Datasheet Page 0 Version 1.0 Mar. 2004 MR18R326GAG0 (32Mx18)*16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V

Regulator marking code A30

Contextual Info: MN18R3268AF0 Revision History Version 1.0 September 2003 - First Copy - Based on the 1.1 ver. (Aug 2003) 288Mbit D-die NexMod TM Module Datasheet. Page 0 Version 1.0 Sept. 2003 MN18R3268AF0 (32Mx18)*8pcs NexMod Module based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

Contextual Info: UG732R16 8 04U6J(7J) Data sheets can be downloaded at www.unigen.com 64M Bytes (32M x 16/18 bits) RAMBUS RIMM MODULE 184 Pin RIMM based on 4 pcs 8M x 16/18 RDRAM & 16K Refresh 32Mx16 bits, 32Mx18 bits w/ECC, 800MHz and 600MHz GENERAL DESCRIPTION PIN ASSIGNMENT (Front View)

Contextual Info: MS18R3266AH0 Revision History Version 0.1 November 2003 - Preliminary - First Copy - Based on the 1.0 ver. (July 2002) 288Mbit D-die SO-RIMM Module Datasheet. Version 1.0 (May 2004) - Eliminate "Preliminary" Page 0 Rev. 1.0 May 2004 MS18R3266AH0 (32Mx18)*6pcs SO-RIMM™ based on 576Mb A-die, 32s banks,32K/32ms Refresh, 2.5V

circuit of rowa television

Abstract: toshiba b54
Contextual Info: TOSHIBA TH M R2E2Z-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR2E2Z is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 2 TC59RM818MB Direct Rambus DRAMs on a printed circuit board.

IS49NLS18320

Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at 533 MHz clock frequency)

DGA4

Abstract: loqb 47KQ B23A B85A Toshiba Rambus IC
Contextual Info: TOSHIBA THMR2N2Z-6/-7/-8 T O SH IBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 33,554,432-W ORD BY 16-BIT 64M Bytes Direct Rambus D R A M M O D U LE DESCRIPTION The THMR2N2Z is a 33,554,432-word by 16-bit direct rambus dynamic RAM module consisting of 2

a106 diode

Abstract: code A106 a105 a114 marking A93 transistor marking A21 a105 transistor A116 diode a74 marking code B92 02 diode diode A106
Contextual Info: MD18R3268 G AG0 Preliminary 32 Bit RIMM Module Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 bit RIMM Datasheet Version 0.1 Sept. 2003 Preliminary 32 Bit RIMM® Module MD18R3268(G)AG0

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2011 FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

rosan

Contextual Info: TOSHIBA THMR1E4-6/-7/-8 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-W ORD BY 18-BIT 64M Bytes Direct Rambus DRAM MODULE DESCRIPTION The THMR1E4 is a 33,554,432-word by 18-bit direct rambus dynamic RAM module consisting of 4 TC59RM718MB Direct Rambus DRAMs on a printed circuit board.

IS49NLS18320

Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 14.4 Gb/s peak bandwidth (x18 Separate I/O at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

IS49NLS18320

Abstract: IS49NLS18320A
Contextual Info: IS49NLS96400A, IS49NLS18320A 576Mb 64Mbx9, 32Mbx18 ADVANCED INFORMATION SEPTEMBER 2014  Seperate I/O RLDRAM 2 Memory FEATURES •  533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x18 at 533 MHz clock frequency)   Reduced cycle time (15ns at 533MHz)

issi 935

Abstract: DK QK BA1 K11 33bl IS49NLC96400
Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

TC59SM716FT-75

Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
Contextual Info: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLS18320

Contextual Info: IS49NLS96400,IS49NLS18320 576Mb x9, x18 Separate I/O RLDRAM 2 Memory ADVANCED INFORMATION JULY 2012 FEATURES •         533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4 Gb/s peak bandwidth (x18 Separate I/O at

serial presence detect samsung 2010

Contextual Info: MD18R3268 G AG0 Change History Version 0.1 (Sept. 2003)- Preliminary * First copy. * Based on version 1.0 (July 2002) 256/288Mbit D-die 32 Bit RIMM Module Datasheet Version 1.0 (Feb. 2004) * Eliminate “Preliminary” Version 1.0 Feb. 2004 MD18R3268(G)AG0

IS49NLC36160A

Abstract: IS49NLC96400
Contextual Info: IS49NLC96400A, IS49NLC18320A, IS49NLC36160A 576Mb 64Mbx9, 32Mbx18, 18Mbx36 ADVANCED INFORMATION SEPTEMBER 2014  Common I/O RLDRAM 2 Memory FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz clock

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

A80L

Abstract: PC100 4M84 2M164 upd432836 uPD432836AL 0443 IC 512k*8 sram 450 mil uPD432836L PC133-333
Contextual Info: CD-ROM用ICメモリ CD-ROM X13769XJ2V0CD00 04−1 IC メモリ ダイナミックRAM • シンクロナスDRAM：SDR（シングル・データ・レート），256Mビット（x４ビット構成） 容量 構成 品 名 （ビット） （ワード