47KQ Search Results

MARKING CODE Zi sot363

Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
Contextual Info: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration

KSR1112

Abstract: KSR2112
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSR2112 14E D J 7^4:142 0007135 f l j PNP EPITAXIAL SILICON TRANSÌSTOR T - 3 7 - IB SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, inverter, Interface circuit Driver circuit • Biiilt in bias Resistor (R-47KQ)

KSR1208

Abstract: KSR2208
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR KSR2208 SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=47KQ , R2=22K£1) • C om plem ent to KSR 1208 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

K 192 A transistor

Contextual Info: SIEMENS BCR 192 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22ki2, R2=47kQ Type BCR 192 Marking Ordering Code Pin Configuration WPs Q62702-C2265 1=B Package 2=E 3=C SOT-23

Contextual Info: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (Ri*10kQ, R2*47kQ) • Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS {Tft=25t:)

Contextual Info: Ordering num ber : EN3288 _ F C 1 3 4 No.3288 N PN E pitaxial P la n ar Silicon Composite T ransistor Switching Applications with Bias Resistance F e a tu r e s •On-chip bias resistances (R1 = 10ki2, R2 = 47kQ) • Composite type with 2 tran sisto rs contained in the CP package c u rre n tly in use, im proving the

Contextual Info: KSR1212 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47KQ) • Complement to KSR2212 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

Contextual Info: KSR1108 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Orivdr circuit • Built in bias Resistor (R,=47KQ, R;=22KO) • Complement to KSR2108 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

transistor bc 577

Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
Contextual Info: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2

Contextual Info: KSR2208 PNP EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION B ia s R e sistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R,=47kQ, R 2i*22kfi) • Complement to KSR12Q8 ABSO LU TE MAXIMUM RATINGS (TA-25t:)

Contextual Info: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W

marking fl

Abstract: KSR2104 KSR1104 H47-K
Contextual Info: SAMSUNG SEMICONDUCTOR m e_ INC KSR2104 00D7117 d | i PNP EPITAXIAL SILICON TRANSISTOR “ SWITCHING APPLICATION Bias Resistor Built In ~ - 3 y -13 — • Switching Circuiti Inverter, Interface circuit Driver circuit • Built In bias Resistor (R,=47KQ, R¡=47K0)

Contextual Info: Resistor Networks Thick Film miniReel Ohms Order Number miniBag Ohms Order Number Isolated Circuit Isolated Circuit 620-222 620-233 620-247 10012 620-310 150£2 620-315 22012 620-322 33012 620-333 470£2 620-347 1KI2 620-410 10K£2 620-510 47KQ 620-547 100K£2 620-610

Contextual Info: S AN Y O SEMICONDUCTOR C O RP 22E 7 ‘H 7 Q 7 b D 0007374 S T-3S- lì FC108 NPN Epitaxial Planar Silicon Composite Transìstor 2066 Switching Applications Î3076 with Bias Resistances R 1=47kQ , R 2=47kil F eatures • On-chip bias resistors (Ri= 47kfl,R2= 47kft)

Contextual Info: Ordering number : EN 3075 FC 1 0 7 No.3075 SAßlYO PN P E pitaxial P lanar Silicon Composite T ransistor Switching Applications 1 Features •On-chip bias resistors Ri = 47kQ,R.2 = 47kQ • Com posite type w ith 2 tran sisto rs contained in the CP package cu rren tly in use, im proving the

Contextual Info: KSR2112 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit Driver circuit • Built in bias Resistor (R=47KQ) • Complement to KSR1112 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

IJ9 marking

Abstract: 2SC4396 2SA1676 27641 transistor npn d 2058 bau 95 BL 19 20-69 SANYO CE
Contextual Info: S A N Y O S E M I C O N D U C T O R CORP 2SA1676, 2SC4396 E2E D 7 ,H 7 0 7 b G0073LG S T - 37-/3 -r-JS-U . PN P /N PN Epitaxial Planar Silicon Transistors 2059 Switching Applications with Bias Resistances R1=47kQ, R2=47ki2 2764 Applications . Switching circuit, inverter circuit, interface circuit, driver circuit

KSR1108

Abstract: KSR2108
Contextual Info: SAMSUNG S EM IC O N D U C TO R INC I KSR2108 PNP EPITAXIAL SILICO N TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In T - 3 T I3 • Switching Circuit, Inverter, Interface circuit Driver circuit • Bullt In bias Resistor (R,=47KQ; Ra=22KO) • Complement to KSR1108

KSR1204

Abstract: KSR2204
Contextual Info: KSR2204 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In TO -92S • Sw itching circuit, Inverter, Interface circuit, D river C ircuit • Built in bias Resistor (R 1=47KQ , R2=47K£i) • C om plem ent to KSR 1204 ABSOLUTE MAXIMUM RATINGS (TA=25°C)

Contextual Info: KSR2113 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built in SOT-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =2.2kC, R2=47kQ) • Complement to KSR1113 ABSOLUTE MAXIMUM RATINGS (TA=25t:)

Contextual Info: KSR1113 NPN EPITAXIAL SILICON TRAN SISTO R SW ITCHING APPLICATION Bias Resistor Built In SO T-23 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R, =2.2 kC, R2=*47kQ) • Complement to K SR 2 113 ABSO LU TE MAXIMUM RATINGS (TA=25‘C)

Contextual Info: KSR2212 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R*47kQ) • Complement to KSR1212 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t) C haracteristic

Contextual Info: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation

Contextual Info: DATA SHEET / NEC ELECTRON DEVICE SILICON TRANSISTOR / - _ y _ GA1 L4L M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR F E A TU R E S PACKAGE DIMENSIOMS • Resistors Built-in TY PE in m illim eters Rt =47kQ O -W V R2 = 2 2 k Q