8MX18 Search Results

TC59SM716FT-75

Abstract: TC59SM708FT-75 TC59RM716GB THMY6416H1EG-75 TSOP 48 Package nand memory toshiba TH50VSF3681AASB TSOPII-54 16MX72 thmr1e16e THMY6432G1EG-75
Contextual Info: TOSHIBA AMERICA ELECTRONIC COMPONENTS DRAM COMPONENT PRODUCTS SELECTION GUIDE January 2002 Subject to change without notice ORG TYPE PKG SPEED (ns) BANKS ROW/ COL STATUS (2) Des Rec(3) FEATURES DATASHEET TC59RM718MB/RB(1) 8Mx18 Rambus CSP-62 800/711/600 MHz

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any

SGRAM

Abstract: 4MX16
Contextual Info: ‘H Y U N D A I SGRAM / Direct RDRAM / SyncLink DRAM ORDERING INFORMATION • 16Mbit SGRAM Organization Part Number Speed MHz Features Package 16M bit (512Kx32) HY58163210TQ 143/125/100 2Bank, 2K, 3.3V 100pin QFP Part Number SpeedjMbps) Features R&isage

Contextual Info: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.

Contextual Info: KMMR18R84 6/8/C/G AC1 RAMBUS MODULE SERIAL PRESENCE DETECT SPD Specification For 144M RDRAM(2nd Gen.) based RIMM REV. 1.03 February 2000 Revision History Revision 1.0 (June ′99) It is based on the RAMBUS SPD Specification 1.0 version. Revision 1.01 (Oct. ′99)

Contextual Info: SMH288RFUUD20 October 11, 2001 Revision History • October 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com 1 Europe: 5 Kelvin Park South, Kelvin South, East Kilbride, G75 ORH, United Kingdom • Tel: +44-870-870-8747 • Fax: +44-870-870-8757

MR18R0824

Contextual Info: MR16R0824 8 BM0 MR18R0824(8)BM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1a ver. 128/144Mbit RDRAMs(B-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)BM0 MR18R0824(8)BM0

MR18R0824

Contextual Info: MR18R0824 6/8/C/G AN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.

4MX16

Abstract: HYslu
Contextual Info: »«YUN D H I > •« TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Direct RDRAM/SyncLink DRAM Part Numbering 3. SGRAM/Direct RDRAM/ SyncLink DRAM DATA SHEETS 16Mbit SGRAM Organization Features Part Number Page 16Mbit (512Kx32 bit

MR18R0828AN1-CK8

Abstract: ck7 marking code MR18R0824 marking code b35 gan1 marking B44
Contextual Info: MR16R0824 6/8/C/G AN1 MR18R0824(6/8/C/G)AN1 Change History Version 1.0 (August 1999) - Preliminary * First copy. * Based on the Rambus RIMM Datasheet Rev.1.0. Version 1.01 (October 1999) Page No. Change Description 1 - Delete the part numbers of low power.

HYC532100

Abstract: 4MX16 2MX32 8MX16 DRAM 1M X 8
Contextual Info: TABLE OF CONTENTS 1. INDEX Table of Contents. 2. FLASH CARD DATA SHEET FLASH M EM ORY CARD ORDERING INFORMATION HYCFL001 HYCFL002 HYCFLF16004 HYCFLF16008 1MB 2MB 4MB 8 MB . 3 512Kx8based .5

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

jeida 88 pin memory card

Abstract: jeida dram 88 pin dram card 60 pin jeida sram 2Mbyte dram 88 pin KMCJ616256 8Mx18 sram 4MX16 2MX32
Contextual Info: FUNCTION GUIDE 1. PRODUCT GUIDE 1.1 DRAM Card Card Style Vcc Density JEIDA/JEDEC 5.0V 2MByte 4M Byte 8M Byte 1.2 PK G Features • Fast Page Mode KMCJ532512 512Kx32/1Mx16 60/70/80 88 Pin Two Piece KMCJ536512 512Kx36/1Mx18 60/70/80 88 Pin Two Piece Operation

Contextual Info: MR18R0824 8 BM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (B-die,32s banks) Normal RIMM SPD Specification 1.1 version.

MR18R0824

Contextual Info: MR18R0824 6/8/C/G BN1 RAMBUS MODULE SERIAL PRESENCE DETECT RIMM SPD Specification based on 144M RDRAM(B-die, 32s banks) Verion 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) SPD Specification 1.02 version.

Contextual Info: 1066 MHz RDRAM 512/576 Mb 8Mx16/18x4i Advance Information Overview The 1066 MHz RDRAM is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

jeida dram 88 pin

Contextual Info: 'HYUNDAI HYC536410 Series 4Mx36 DRAM CARD DESCRIPTION The HYC536410 is the DRAM memory card consisting of eight HY5117400ASLTand four HY5141OOALT built in the metal plate housing. The Hyundai DRAM card is optimized forthe applications such as buffering, main and add-in

HP83000

Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
Contextual Info: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC

Contextual Info: SMI144RBSAD01 July 11, 2000 Revision History • July 11, 2000 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191

toshiba toggle mode nand

Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Contextual Info: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit

Rambus

Contextual Info: R e a d y f o r t h e N e w M e m o r y S t a n d a r d Never stop thinking. RDRAM In the last years memory bus frequency has evolved from 33MHz for EDO to the current standard of 100MHz for SDRAMs and up to 133MHz for the latest PC133 specification. However, despite this continuous improvement, memory speed has been outpaced

Contextual Info: MR18R0824 8 AM0 RAMBUS MODULE SERIAL PRESENCE DETECT Mirrored RIMM SPD Specification based on 144M RDRAM(A-die, 32s banks) Version 1.1 October 2000 Change History Version 1.1 (Oct. ′00) Based on the Samsung 144M RDRAM (A-die) Normal RIMM SPD Specification 1.02 version.

DD 128

Abstract: MR18R0824
Contextual Info: MR16R0824 8 AM0 MR18R0824(8)AM0 Preliminary Change History Version 1.0 (October 2000) - Preliminary * First copy. * Based on the 1.1ver. 128/144Mbit RDRAMs(A-die, 32s banks) base Normal RIMM Datasheet. Page 0 Version 1.0 Oct. 2000 MR16R0824(8)AM0 MR18R0824(8)AM0