HP83000
Abstract: HP8753E Kingston Technology testing of diode SAMSUNG RLC 4Mx1 Hyundai Semiconductor UPD488385FB-C80-45-BF1 UPD488385FB-C80-45BF1 KM418RD8C-RK80
Contextual Info: RDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on RDRAM components. A small sample of components 2-5 devices has been characterized on an HP83000 tester with Rebus, a test program written by Rambus. The RLC
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hp83000hp8753ekingston technologytesting of diode+6samsung rlc4mx1hyundai semiconductorupd488385fb-c80-45-bf1upd488385fb-c80-45bf1km418rd8c-rk80
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HP83000
Abstract: 0.7 um CMOS process parameters Nitto 9850 JEDEC20 G226 Nitto MP8000 MP8000 ITS9000 atmel PLCC bottom "marking" MG2RTP
Contextual Info: Qualpack MG2RT/MG2RTP Qualification Package MG2RT / MG2RTP 0.5 µm Radiation Tolerant SCMOS3 Technology MG2RT / MG2RTP 0.5 µm SCMOS3 1999 August TEMIC SEMICONDUCTORS IS AN ATMEL COMPANY Rev. 0 – 1999 August 1 Qualpack MG2RT/MG2RTP 1. General Information . 3
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hp830000.7 um cmos process parametersnitto 9850jedec20+6g226nitto mp8000mp8000its9000atmel plcc bottom "markingmg2rtp
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HP83000
Abstract: Electro SEX X81D1 HP8300 X41D ECL IC NAND
Contextual Info: • 7 Ô1 1 D 7 3 O G lb a ^ O Tas B R K Iil Cyclone Series Cyclone Series GaAs Gate Arrays Rockwell Introduction The sub-micron Cyclone Series™ of GaAs gate arrays from Rockwell represent the culmination of over ten years of research and development.
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hp83000electro sexx81d1hp8300+2x41decl ic nand
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HP83000
Abstract: HP83K HP83K tester TDS784 Tektronix TDS784 HP83000F330 F330 hp83 P6245 PC133-SDRAM
Contextual Info: Intel PC 133 Validation Specification INTEL PC133 VALIDATION SPECIFICATION Rev. 1.03 Feb. 23, 2000 Intel Corporation Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document.
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pc133hp83khp83000hp83k tester+7tds784tektronix tds784hp83000f330f330hp83p6245pc133-sdram
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HP83000
Abstract: LI-300 Signal Path designer FLIP FLOP toggle
Contextual Info: O V A t f k ln f lf A ll Lig h tn in g Series - LI300, LI1000 m m tM m jrtm . W % S m m Ultrahigh-Speed GaAs Gate Arrays Features Figure 1 Photomicrograph of the Lightning LI300 array • Advanced HBT GaAs process for high performance • Two array sizes: 300 or 1000 equivalent gates
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