23C1001
Contextual Info: KM23C1001/1011 CMOS MASK ROM 1M-Bit 128K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1001: 28 pin DIP (Polarity programmable output enable pin) • KM23C1011: 32-pin DIP (Polarity programmable output enable pin) • 131,072 x 8 bit organization
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km23c1001/1011km23c1001km23c101132-pin+2120ns23c1001
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23C1011
Abstract: ay 5 1011
Contextual Info: KM23C1Û01/1011 G CMOS MASK ROM 1M-Bit (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C1001/1011 is a fu lly s ta tic m ask program m able ROM organized 1 3 1 ,0 7 2 x8 b it. It is fabricated using silicon-gate CMOS process technology.
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km23c1128kx8120ns28-pin+6600mil32-pin525miikm23c1001/101123c1011ay 5 1011
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bu 1011
Abstract: KM23C1011
Contextual Info: KM23C1001/1011 CMOS MASK ROM 1M-Bit 128Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • KM23C1001: 28-pin DIP (Polarity programmable output enable pin) • KM23C1011: 32-pin DIP (Polarity programmable output enable pin) • 131,072 x 8 bit organization
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km23c1001/1011128kx8km23c100128-pin+4km23c101132-pin150nsbu 1011
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23C1001
Abstract: YM 1011 23C1011 M23C1001
Contextual Info: KM23C1001/1011 CMOS MASK ROM 1M-Bit 128KX8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • K M 23C 1001: 20-pin D IP (P olarity prog ram m able ou tp u t en a b le pin) T h e K M 2 3 C 1 0 0 1 /1 0 1 1 is a fu lly s ta tic m a s k p ro g ra m m a b le R O M o rg a n iz e d 1 3 1 ,0 7 2 x 8 b it. It is fa b ric a te d
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km23c1001/1011128kx820-pin32-pin+7km23c10115io30km23c1011g23c1001ym 101123c1011m23c1001
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23c2100
Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7
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km41c4000-8km41c4000-10km41c4000l-8km41c4000l-10+16km41c4001-8km41c4001-10km41c4002-8km41c4002-10km41c4000a-7km41c4000a-823c2100km28c64-20km28c16-15km28c256j15km28c64-25km28c65-20km28c256-15km28c64a25km28c64j-20km28c64a-15
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toshiba 32k*8 sram
Abstract: M5M23C100 M5M5265 seeq DQ2816A M5M23C400 MB832001 HITACHI 64k DRAM TC511000 KM41C464 TC51464
Contextual Info: FUNCTION GUIDE MEMORY ICs 3. CROSS REFERENCE GUIDE 3.1 DRAM Density 64 K X 1 256K X 1 X4 1M X X 4M X X 3.2 Mode Org. 1 4 1 4 Samsung Toshiba Hitachi Fujitsu NEC MSM3764 KM4164 Page Okl F. Page KM41C256 TC51256 Nibble KM41C257 TC51257 HM51256 S. Column KM41C258
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km4164km41c256km41c257km41c258+15km41c464km41c466km41c1000km41c1001km41c1002km44c256toshiba 32k*8 sramm5m23c100m5m5265seeq dq2816am5m23c400mb832001hitachi 64k dramtc511000tc51464
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uPD23C4000
Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A
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64kx4km424c64mt42c4064upd41264+16upd42264hm53461tms446164kx8256kx4km428c64upd23c400093c46 atmelsony cross referenceatmel 93c66hn62404p93c46lrom at29c010hitachi sram cross referencex2864aupd23c2000
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samsung KX
Abstract: ha13
Contextual Info: SA M S UN G E L E C T R O N I C S INC b7E D • 71b4m2 KM23C1Û01/1011 G □ □ 1 Ljc153 TÜfi ■ SMGK CMOS MASK ROM 1M-Bit (128KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072X 8 bit organization • Fast access time : 120ns(max). « Supply voltage : single+5V
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71b4m2km23c1128kx8120ns+628-pin600mil32-pin525milsamsung kxha13
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KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
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km4164bpkm41c256pkm41c256jkm41c256z+15km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm424c256zsimm 30-pin30-pin simm ramkm44c256bpkm41c1000bj257jkm44c256bz1k x4 static ram30-pin simm memory "16m x 8
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41C1000
Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
Contextual Info: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258
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41c25641c25741c25841c464+1441c46641c100044c25644c25844c1002tc51257fujitsu 814100tc 55464 toshibahn62304hn623257658128816bhn62324m7202a
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23C8001A
Abstract: 23C8001 KM23C2001 2001h 23c4001
Contextual Info: TABLE OF CONTENTS I. FUNCTION GUIDE 1. 2. 3 4 II. EEPROM DATA SHEETS 1 2 3 4. 5 6. 7. 8. 9. 10 11. 12 13. 14. III. In tro d u ctio n. v -. 11 Product G uide. \ . 28
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32000g32000fp23c32100g32100fp+523c8001a23c8001km23c20012001h23c4001
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41C464
Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page
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41c25641c25741c25841c464+1441c46641c100041c100244c25644c25841c4000tc55b8128424170 neccy7019944c1000iot7164hn62308bphn62404ptc5116100
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K93C46
Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257
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416c25614800a14900a514170b+16514280bkm23c16000gkm23c16100gkm23c16000fpkm23c16100fphn624017fbk93c4693cs46nmb832001hn6230841c100093c46ln41464hn623257hm63832dt71256
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TC55B8128
Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6
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tc511001tc514101514170b514280b+16tc5316200pkm2x16100km23c16000gkm23c16100gkm23c16000fpkm23c16100fptc55b8128km23c4000agtc534000afhn62308bptc551632hitachi crossmb8368512uhitachi 64k dramtc55b4256
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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km41c1000c-6km41c1000cl-6km41c1000csl-6km44c256c-6+15km44c256cl-6km44c256csl-6km41c4000c-5km41c4000c-6km41c4000c-7km41c4000c-8kmcj532512km23c1000-20km28c64bkmm594km718b90-12zip 40pin30-pin simm memory "16m x 8km41c16000allkm48v2104al
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KM28C64A
Contextual Info: TABLE OF COm-ENTS FUNCTION GUIDE 1. 2. 3. 4. Introduction. 11 Product G uide. 19
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km75c03akm75c101akm75c102akm75c103a+2km75c104akm28c64a
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Contextual Info: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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km41c256pkm41c255jkm41c258zkm41c257p+15km41c257jkm41c257zkm41c25bpkm41c258jkm41c464pkm424c256zkm41c464pb20km64258km68512kmm5362000km23c264k 30-pin simmkm23c4000akm41c4000bj
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Contextual Info: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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km4164bpkm41c256pkm41c256jkm41c256z+14km41c257pkm41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c1000bjkm44c256bpkm41c1000bpkm41c1001bpkm44c256bjkm4164km44c1000ljkm41c464z
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Contextual Info: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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km41c256pkm41c256jkm41c256zkm41c257p+12km41c257jkm41c257zkm41c258pkm41c258jkm41c258zkm41c464pkmm591000ankm424c256zkmm591000bkm41c464kmm584000b4mx1 nibble
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KM23C8001
Abstract: 32-sop
Contextual Info: MEMORY ICs FUNCTION GUIDE 2.6 MASK ROM Capacity Part Number Orgrization Speed ns Tech. Features Package Remark 256K KM23C256(G) 32Kx8 120/150/200 CMOS Programmable C E & OE 28DIP(32SOP) Now 512K KM23C512(G) 6 4 K *8 120/150/200 CMOS Programmable C E & O E
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km23c256km23c512kc23c1000km23c1001+8km23c1010km23c1010jkm23c101132kx8128kx256kxkm23c800132-sop
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KM23C1010
Abstract: KM23C512 KM44C1000 KM44C1002 KM23C2001 23c16000 KM75C01AP KM416C256-7 KM41C4000A KM75C01AJ
Contextual Info: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM «ä SAM SUN G Electronics FUNCTION GUIDE MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000-8 — - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 - KM41C4001-10 KM41C4002-8 - KM41C4002-10
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km41c4000-8km41c4000-10km41c4000l-8km41c4000l-10+16km41c4001-8km41c4001-10km41c4002-8km41c4002-10km41c4000a-7km41c4000a-8km23c1010km23c512km44c1000km44c1002km23c200123c16000km75c01apkm416c256-7km41c4000akm75c01aj
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