J108
Abstract: J110 J109
Contextual Info: Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES J108; J109; J110 PINNING - TO-92 • High speed switching PIN SYMBOL • Interchangeability of drain and source connections 1 2 g s gate • Low Roson at zero gate voltage <8 £2 for J108 .
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transistor j109
Abstract: transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110
Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
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transistor j109
Abstract: MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110
Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.
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CRS15
Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs
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J108
Abstract: J109 J110 Silicon Junction FETs J109 7
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs
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transistor j109
Abstract: transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor
Contextual Info: Databook.fxp 1/14/99 1:02 PM Page B-49 B-49 01/99 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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PN5432
Abstract: CBVK741B019 F63TNR J108 PN2222N PN5433 PN5434
Contextual Info: PN5432 / PN5433 / PN5434 PN5432 PN5433 PN5434 G S TO-92 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108 for characteristics. Absolute Maximum Ratings*
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J107
Abstract: MOTOROLA J110
Contextual Info: MOTOROLA SC XSTRS/R F 1 2 E D I t i3 t i7 a S M 0 G f l b ? a f l fl | * J1 0 7 thru J110 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol Value Drain-Gate Voltage VDG -2 5 Vdc Gate-Source Voltage Vq S -2 5 Vdc Rating Unit 1 Drain Gate Current
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Bsv80
Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78
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Contextual Info: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)
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BF991
Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485
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NJ450
Abstract: D45 TRANSISTOR IFN363 IFN146 IFN147 f36 transistor J108 J110 J110A 2SK363
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R on Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts
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bfw11 jfet
Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72
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mpf3002
Abstract: MPF4093 Motorola 2N4393 2N4393 MOTOROLA MPF4092 2N3971 2N5463 MOTOROLA 2N5639 MOTOROLA MPF4392 BF246A
Contextual Info: FIELD-EFFECT TRANSISTORS continued Switches and Choppers (continued) N-Channel JFETs rds(on) Package TO - Device (Q) MAX VGS(0ff) •d s s 0/) (m A) V(BR)GSS v (BR)GDO ^ is s ^rss *on *off @ (D (HA) MIN MAX MIN MAX (V) MIN (pF) MAX (pF) MAX (ns) MAX (ns)
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2N4092
Abstract: PMBFJ112 bsv79 PMBFJ111
Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number ± v DS max. V characteristics 'g max. (mA) min. (mA) LEADED TYPES BSV78
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J177. P-CHANNEL. TO-92
Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature
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pn5114
Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max
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Diode j106
Abstract: SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004
Contextual Info: Switching Power Transistors Part No. and Polarity NPN Operating Temperature: -65 o C to 150oC Maximum Ratings P TOT @ Tcase PNP IC VCES Characteristics V CEO tf @ IC hFE @ IC & VC E VCE SAT @ I C and h FE (W) (°C) (A) (V) (V) (µs) (A) (A) (V) (V) (A) BUD620
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U1898
Contextual Info: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)
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2SK170BL
Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
Contextual Info: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual
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transistor 2N3563
Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .
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2SK163
Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
Contextual Info: RF!֩!ڼ7Ӳ RFׂڦᆌᆩࢅยऺ֩ 200511ሆ ݀քන;!!200511ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ!&!ጺঢ়!RFׂ Ⴞჾ ࣌ᆓ۩ለڼ7ӲRF֩ă்ඓ႑Ljएᇀᆌᆩ႑တڦඇࢻ๕֡ፕႎঋࣷॽۅ๑इᅮݩറLj்ڦ
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PN4416
Abstract: BF98 BF991 BF998 BF909WR BF1105WR
Contextual Info: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications
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2SK163 spice model
Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed
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