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    J108 - TRANSISTOR Search Results

    J108 - TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    54F151LM/B
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL PDF Buy
    ICL7667MJA
    Rochester Electronics LLC ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 PDF Buy
    93L422ADM/B
    Rochester Electronics LLC 93L422A - 256 x 4 TTL SRAM PDF Buy
    54F151/BEA
    Rochester Electronics LLC 54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) PDF Buy

    J108 - TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J108

    Abstract: J110 J109
    Contextual Info: Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES J108; J109; J110 PINNING - TO-92 • High speed switching PIN SYMBOL • Interchangeability of drain and source connections 1 2 g s gate • Low Roson at zero gate voltage <8 £2 for J108 .


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    7110fl2b711dfl2b010bs13j108+2j110j109 PDF

    transistor j109

    Abstract: transistor dg sot-23 J109 J110 MMBFJ108 PN2222N CBVK741B019 F63TNR J108 J108-110
    Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.


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    mmbfj108ot-23transistor j109transistor dg sot-23+7j109j110pn2222ncbvk741b019f63tnrj108j108-110 PDF

    transistor j109

    Abstract: MMBFJ108 J108 - TRANSISTOR I8 SOT23 CBVK741B019 F63TNR J108 J108-110 J109 J110
    Contextual Info: J108 / J109 / J110 / MMBFJ108 MMBFJ108 J108 J109 J110 G S SOT-23 D Mark: I8 G S TO-92 NOTE: Source & Drain are interchangeable D N-Channel Switch This device is designed for analog or digital switching applications where very low on resistance is mandatory. Sourced from Process 58.


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    mmbfj108ot-23transistor j109j108 - transistor+7i8 sot23cbvk741b019f63tnrj108j108-110j109j110 PDF

    CRS15

    Abstract: J110 J108 J109 Silicon Junction FETs transistor j109 equivalent
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


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    crs15j110j108j109+2silicon junction fetstransistor j109 equivalent PDF

    J108

    Abstract: J109 J110 Silicon Junction FETs J109 7
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs


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    j108j109j110silicon junction fets+1j109 7 PDF

    transistor j109

    Abstract: transistor j109 equivalent J108 J109 SMPJ108 SMPJ109 tOD22 j109 transistor
    Contextual Info: Databook.fxp 1/14/99 1:02 PM Page B-49 B-49 01/99 J108, J109 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    nj450226aasmpj108smpj109+6transistor j109transistor j109 equivalentj108j109tod22j109 transistor PDF

    PN5432

    Abstract: CBVK741B019 F63TNR J108 PN2222N PN5433 PN5434
    Contextual Info: PN5432 / PN5433 / PN5434 PN5432 PN5433 PN5434 G S TO-92 D N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 58. See J108 for characteristics. Absolute Maximum Ratings*


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    pn5432pn5433pn5434cbvk741b019+3f63tnrj108pn2222n PDF

    J107

    Abstract: MOTOROLA J110
    Contextual Info: MOTOROLA SC XSTRS/R F 1 2 E D I t i3 t i7 a S M 0 G f l b ? a f l fl | * J1 0 7 thru J110 CASE 29-04, STYLE 5 TO-92 TO-226AA MAXIMUM RATINGS Sym bol Value Drain-Gate Voltage VDG -2 5 Vdc Gate-Source Voltage Vq S -2 5 Vdc Rating Unit 1 Drain Gate Current


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    o-226aaj107motorola j110 PDF

    Bsv80

    Abstract: 2N4092 2N4392 Philips J176 PMBF PMBFJ111 PMBFJ174
    Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs JUNCTION FETS FOR SWITCHING OVERVIEW PRODUCT DATA: PAGES 39-40 leaded N/P TO-18 surface-mount TO-72 TO-92 SOT23 SOT 143 SOT223 N BSV78


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    bsv78bsv79bsv80bsr56+11bsr57bsr58pmbfj108pmbfj109pmbfj110pmbfj1112n40922n4392 philipsj176pmbfpmbfj174 PDF

    Contextual Info: N-Channel MOSFET Transistors Part No. Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Part No. MOSFET Drain-Source On-State Braekdown DS Current Voltage Static DS Resistance Package Bulk/Reel BVDSS V ID(ON)(A) RDS(ON)(Ω) BVDSS(V)


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    2n70002n7000airf510irf610+6irf620irf624irf630irf633irf634irfz14 PDF

    BF991

    Abstract: BF545 BFT46 PMBFJ310 PMBFJ177 PMBFJ211 BF908R BF98 PMBFJ111 PMBFJ174
    Contextual Info: Philips Semiconductors Small-signal Field-effect Transistors Index Types added to the range since the last issue of Handbook SC07 1996 issue are shown in bold print. TYPE NUMBER PAGE TYPE NUMBER PAGE TYPE NUMBER PAGE 2N5484 80 BF909R 165 J174 288 2N5485


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    NJ450

    Abstract: D45 TRANSISTOR IFN363 IFN146 IFN147 f36 transistor J108 J110 J110A 2SK363
    Contextual Info: Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R on Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts


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    nj4502sk363ifn146ifn147+6ifn363j110ad45 transistorf36 transistorj108j110 PDF

    bfw11 jfet

    Abstract: jfet bfw10 Field Effect Transistors BFW12 BFW10 JFET BF256B BF964S BF96 BF964 BF960
    Contextual Info: Small Signal Leaded Devices Field Effect Transistors J-FET cont. ±V DS •d s s -vh{P) GS Pkg (V) (mA) (V) T O -18 T O -18 T O -18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-72 TO-72 TO-72 TO-72


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    2n48592n48602n4861bf245a/0+16bf245abf245bbf245cbf247abf247bbf247cbfw11 jfetjfet bfw10field effect transistorsbfw12bfw10 jfetbf256bbf964sbf96bf964bf960 PDF

    mpf3002

    Abstract: MPF4093 Motorola 2N4393 2N4393 MOTOROLA MPF4092 2N3971 2N5463 MOTOROLA 2N5639 MOTOROLA MPF4392 BF246A
    Contextual Info: FIELD-EFFECT TRANSISTORS continued Switches and Choppers (continued) N-Channel JFETs rds(on) Package TO - Device (Q) MAX VGS(0ff) •d s s 0/) (m A) V(BR)GSS v (BR)GDO ^ is s ^rss *on *off @ (D (HA) MIN MAX MIN MAX (V) MIN (pF) MAX (pF) MAX (ns) MAX (ns)


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    2n4860a2n48572n4860n4092+14mpf40922n4392mpf43922n4858a2n4861a2n3909mpf3002mpf4093motorola 2n43932n4393 motorola2n39712n5463 motorola2n5639 motorolabf246a PDF

    2N4092

    Abstract: PMBFJ112 bsv79 PMBFJ111
    Contextual Info: Philips Semiconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal FETs N-CHANNEL JUNCTION FETS FOR SWITCHING ratings type number ± v DS max. V characteristics 'g max. (mA) min. (mA) LEADED TYPES BSV78


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    ot223bsr56bsr57bsr58+8pmbf4391pmbf4392pmbf4393pmbfj1082n4092pmbfj112bsv79pmbfj111 PDF

    J177. P-CHANNEL. TO-92

    Abstract: 2N4393 2N5021 2N4856 2N5116 datasheet for transistor 2n4860 interfet J174 smp4856 2N4391
    Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-13 B-13 01/99 2N4391, 2N4392, 2N4393 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low On Resistance Analog Switches ¥ Choppers ¥ Commutators 2N4391 At 25°C free air temperature


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    2n43912n43922n4393o-226ab+9o-92/18j177. p-channel. to-922n50212n48562n5116datasheet for transistor 2n4860interfetj174smp4856 PDF

    pn5114

    Abstract: PN5432
    Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max


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    qq15bqapn4091pn4092pn4093+62n33822n50182n5019rs-468pn5114pn5432 PDF

    Diode j106

    Abstract: SSP6N60 TD13002 BUD620 BUF620 BUF640A BUF642 BUF644 TD13003 TD13004
    Contextual Info: Switching Power Transistors Part No. and Polarity NPN Operating Temperature: -65 o C to 150oC Maximum Ratings P TOT @ Tcase PNP IC VCES Characteristics V CEO tf @ IC hFE @ IC & VC E VCE SAT @ I C and h FE (W) (°C) (A) (V) (V) (µs) (A) (A) (V) (V) (A) BUD620


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    U1898

    Contextual Info: F8 9-97 Small Outline Surface Mount Package Devices N ^H A N N E rsÌLÌcO N T Ù N C T ÌO N T ÌE L D -E F F E C T TRANSISTORS Id s s V g s (O FF ) •g s s BVGSS Device Type Conditions Limits Min @IG Max @Vqs Min Max VDS M m (nA) (V) (V) (V) (V) Id (nA)


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    2SK170BL

    Abstract: 2SK508 tcxo philips 4322 BFG135 power amplifier for 900Mhz 2SK147BL 2sk162 hitachi 2sk170y toshiba 2sk170bl BF1009SW philips rf manual
    Contextual Info: 4th edition RF Manual product & design manual for RF small signal discretes Page: 1 Philips RF Manual product & design manual for RF small signal discretes 4 edition March 2004 th / discretes/documentation/rf_manual


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    bf1107/8bga2715-17bga6x892sk170bl+92sk508tcxo philips 4322bfg135 power amplifier for 900mhz2sk147bl2sk162 hitachi2sk170ytoshiba 2sk170blbf1009swphilips rf manual PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Contextual Info: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    transistor 2n35632n3819 cross reference2sk302sa726+62sk41e2sc1026transistor 2sc14172sa10262sc2259bc150 transistor PDF

    2SK163

    Abstract: BB142 BF245c SMD BF245A spice ON4831-2 BB184LX BF1109 spice bf998 2SK508 BFG480W
    Contextual Info: RF!๮֩!‫ڼ‬7Ӳ RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2005౎11ሆ ݀քන೺;!!2005౎11ሆ! ࿔ॲຩႾࡽǖ!9397 750 15371 Henk Roelofs-!ޭጺ֋!&!ጺঢ়૙!RFׂ೗ Ⴞჾ ࣌ᆓ۩ለ‫ڼ‬7ӲRF๮֩ă࿢்ඓ႑Ljएᇀᆌᆩ႑တ‫ڦ‬ඇ঍ࢻ๕֡ፕႎঋ‫ࣷॽۅ‬๑౞इᅮ‫ݩ‬റLj࿢்‫ڦ‬


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    tza30x62sk163bb142bf245c smd+7bf245a spiceon4831-2bb184lxbf1109 spicebf9982sk508bfg480w PDF

    PN4416

    Abstract: BF98 BF991 BF998 BF909WR BF1105WR
    Contextual Info: Philips Semiconductors Small-signal field-effect transistors Selection guide N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER PACKAGE ±VDs V •g (mA) •d s s iytsl (mS) ~V(P)GS (V) min - max (mA) Crs (PF) PAGE General purpose analog applications


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    2SK163 spice model

    Abstract: BF256B spice model bf245b spice model TRANSISTOR SMD wb BGY88 spice model bf1202 Microwave GaAs FET catalogue 2sk163 BSS83 spice model BAW 62 SOT23
    Contextual Info: RF Manual 7 edition th Application and design manual for RF products November 2005 date of release: November 2005 document order number: 9397 750 15371 Henk Roelofs,Vice President & General Manager RF Products Introduction Welcome to the 7th edition of our RF Manual. We knew that the new focus of applicationbased information with fully interactive operation would pay off, but the appreciation expressed


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    2sk163 spice modelbf256b spice modelbf245b spice modeltransistor smd wb+6bgy88spice model bf1202microwave gaas fet catalogue2sk163bss83 spice modelbaw 62 sot23 PDF