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    PMBF Search Results

    PMBF Datasheets (174)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PMBF107
    Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF 72.78KB 12
    PMBF107
    Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF 145.14KB 7
    PMBF107
    Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF 58.07KB 8
    PMBF107
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90KB 1
    PMBF107T/R
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 39.66KB 1
    PMBF170
    Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF 57.8KB 8
    PMBF170
    Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF 101.35KB 13
    PMBF170
    Philips Semiconductors N-channel enhancement mode vertical D-MOS transistor Original PDF 56.93KB 3
    PMBF170
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 90KB 1
    PMBF170-03
    Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF 101.36KB 13
    PMBF170,215
    NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF 101.34KB 13
    PMBF170,235
    NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd Original PDF 101.34KB 13
    PMBF170/DG,215
    NXP Semiconductors PMBF170/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel Original PDF 101.23KB 13
    PMBF170T/R
    NXP Semiconductors N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V Original PDF 101.34KB 13
    PMBF170TR
    Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF 101.36KB 13
    PMBF170T/R
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 41.83KB 1
    PMBF4391
    NXP Semiconductors PMBF4391 - N-channel FETs - CRS: 3.5 pF; IDSS: 50 to 150 mA; IDSS max.: 150 mA; IDSS min.: 50 mA; IG: 50 mA; RDS(on): 30 Ohm; toff: 20 ns; ton: 15 ns; -V(P)GS: 4 to 10 V; V(P)GS: 4 V; V(P)GS: 10 V; VDSmax: 40 V Original PDF 61.12KB 9
    PMBF4391
    Philips Semiconductors N-channel FETs Original PDF 42.15KB 7
    PMBF4391
    Philips Semiconductors N-Channel FET Original PDF 78.49KB 4
    PMBF4391
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 120.29KB 1
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    PMBF Price and Stock

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    NXP Semiconductors PMBF4391

    Trans JFET N-CH 40V 150mA Si 3-Pin TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical PMBF4391 18,000 1,000
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    • 10000 $1.50
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    Flip Electronics PMBF4391 18,035
    • 1 $0.96
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    Nexperia PMBF170,235

    Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMBF170,235)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PMBF170,235 Tape & Reel 53 Weeks, 1 Days 30,000
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    Avnet Silica PMBF170,235 32 Weeks 10,000
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    Nexperia PMBF170,215

    Power MOSFET, N Channel, 60 V, 300 mA, 5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: PMBF170,215)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas PMBF170,215 Tape & Reel 53 Weeks, 1 Days 27,000
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    Arrow Electronics PMBF170,215 Cut Strips 12 99 Weeks 1
    • 1 $0.24
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    Newark () PMBF170,215 Cut Tape 46 1
    • 1 $0.33
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    • 100 $0.13
    • 1000 $0.10
    • 10000 $0.09
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    PMBF170,215 Tape & Reel 46 100
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    PMBF170,215 Tape & Reel 3,000
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    Bristol Electronics PMBF170,215 5,700 1
    • 1 $0.60
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    • 100 $0.30
    • 1000 $0.12
    • 10000 $0.09
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    Quest Components PMBF170,215 200
    • 1 $0.10
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    • 100 $0.07
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    TME PMBF170,215 1
    • 1 $0.22
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    • 100 $0.09
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    NexGen Digital PMBF170,215 100,363
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    Avnet Asia PMBF170,215 30 Weeks 27,000
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    Avnet Silica PMBF170,215 32 Weeks 3,000
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    TUK Ltd KAPMBFNL#20

    Pnl Mnt Adaptor, Low Profile, Blk, 20/Pk; |Tuk KAPMBFNL#20
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark KAPMBFNL#20 Pack 21 5
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    • 100 $17.68
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    O-Z Gedney NEPMBF

    Control Operator; |Oz Gedney NEPMBF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark NEPMBF Bulk 1
    • 1 $554.74
    • 10 $518.36
    • 100 $451.68
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    PMBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MBB691

    Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBF107 N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1998 Mar 06 Philips Semiconductors Product specification


    Original
    m3d088pmbf107sc13bsca54+6135108/00/03/pp8mbb691mbb076mar 745 transistormbb692msb003 PDF

    13006 TRANSISTOR

    Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
    Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original
    pmbfj620ot363msc89513006 transistor+6transistor 13006e 1300613006mcd217fet marking13006 d PDF

    Contextual Info: PMBFJ110 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5


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    pmbfj110 PDF

    Contextual Info: PMBFJ310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0


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    pmbfj310 PDF

    Contextual Info: PMBFJ176 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V)1.0


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    pmbfj176 PDF

    Contextual Info: PMBFJ111 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0


    Original
    pmbfj111 PDF

    philips ET-E 60

    Contextual Info: Philips Semiconductors • bbSBTBl D02HQ41 OTB HIAPX AMER PH IL IPS /DISCRETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES MIN. MAX. UNIT - 25 V PMBF5484 1 5 mA PMBF5485 4 10 mA • Low noise SYMBOL • Interchangeability of drain and


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    d02hq41pmbf5484pmbf5485pmbf5486+2-sot23philips et-e 60 PDF

    PMBFJ174

    Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD


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    002405bpmbfj174ot-23rmbfj174 PDF

    pmbfj174

    Abstract: PMBFJ174 to 177 SMD 4B0
    Contextual Info: • ^3 3* 1 3 1 D O S H O S b 524 N A PIER P H I L I P S / D I S C R E T E IAPX b?E PMBFJ174 to 177 D J P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic m icrom iniature SOT-23 envelopes. They are intended fo r application w ith analogue switches, choppers, commutators etc. using SMD


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    pmbfj174ot-237z94962pmbfj174 to 177+1smd 4b0 PDF

    PMBFJ620,115

    Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


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    pmbfj620ot363pmbfj620,115 PDF

    pmbfj310

    Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION


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    pmbfj308pmbfj309pmbfj310 PDF

    SNW-EQ-608

    Abstract: transistor d 1862
    Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES _ PMBF107 PINNING - SOT23 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 • No secondary breakdown. 2 g


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    snw-eq-608snw-fq-302asnw-fq-302bpmbf107+2da763transistor d 1862 PDF

    PMBFJ108

    Abstract: MAM385 PMBFJ109 PMBFJ110
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs


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    pmbfj108pmbfj109pmbfj110mam385 PDF

    pmbfj174

    Abstract: marking p6s P6S SMD
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors


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    pmbfj174mam386marking p6sp6s smd PDF

    Contextual Info: PMBFJ108 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0


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    pmbfj108 PDF

    Contextual Info: PMBFJ113 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5


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    pmbfj113 PDF

    Contextual Info: PMBFJ109 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0


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    pmbfj109 PDF

    MRC172

    Abstract: PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors


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    pmbf5484pmbf5485pmbf5486mam385+4mrc172marking code 10 sot23mrc165mrc171 PDF

    Contextual Info: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL,


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    pmbf107vcb711003b2g5bf107 PDF

    field-effect transistor

    Abstract: MRC160 pmbf4416a TRANSISTOR D 471
    Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES • Low noise • Interchangeability of drain and source connections • High gain. n DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable


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    pmbf4416pmbf4416amam385f4416a+5cpmbf4416amrc166field-effect transistormrc160transistor d 471 PDF

    PMBFJ174

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel


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    pmbfj174mam386r77/02/8 PDF

    PMBF4416

    Abstract: PMBF4416A
    Contextual Info: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections


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    bb53q31pmbf4416pmbf4416add240md PDF

    TRANSISTOR SMD MARKING CODE pKX

    Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
    Contextual Info: • bLiSB'm DÜBSÖIO b 7 4 ■ N AMER P H I L I P S / D I S C R E T E APX b7E PMBF170 D N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed fo r use as a Surface Mounted Device SMD in thin and thick-film circuits w ith applications in relay, high-speed


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    pmbf170200rnabbs3t31transistor smd marking code pkx+8transistor smd marking code dmsmd code pkxtransistor smd marking code ldsmd transistor marking blsmd transistor marking code ddsmd code transistor jatransistor smd marking code 2asmd sot23 transistor pmbf170 PDF

    TRANSISTOR code marking 2FI sot23

    Abstract: PMBF107 UCB710 U34 marking 11 sot23
    Contextual Info: Philips Components PMBF107 Data sheet status Product specification date of issue November 1990 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FE A T U R E S SYM BOL PARAM ETER CONDITIONS MAX. UNIT • Direct interface to C-M O S, TTL,


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    pmbf107003b20stransistor code marking 2fi sot23ucb710+2u34 marking11 sot23 PDF