PMBF Search Results
PMBF Datasheets (174)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| PMBF107 | Philips Semiconductors | N-channel enhancement mode vertical D-MOS transistor | Original | 72.78KB | 12 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF107 | Philips Semiconductors | N-channel enhancement mode vertical D-MOS transistor | Original | 145.14KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF107 | Philips Semiconductors | N-channel enhancement mode vertical D-MOS transistor | Original | 58.07KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF107 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 90KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF107T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 39.66KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170 | Philips Semiconductors | N-channel enhancement mode vertical D-MOS transistor | Original | 57.8KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170 | Philips Semiconductors | N-channel enhancement mode field-effect transistor | Original | 101.35KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170 | Philips Semiconductors | N-channel enhancement mode vertical D-MOS transistor | Original | 56.93KB | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 90KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170-03 | Philips Semiconductors | N-channel enhancement mode field-effect transistor | Original | 101.36KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170,215 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 101.34KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170,235 | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V; Package: SOT23 (TO-236AB); Container: Tape reel smd | Original | 101.34KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170/DG,215 | NXP Semiconductors | PMBF170/DG - N-channel TrenchMOS intermediate level FET, SOT23 Package, Standard Marking, Reel Pack, SMD, Low Profile, 7" Reel | Original | 101.23KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170T/R | NXP Semiconductors | N-channel enhancement mode field-effect transistor - Configuration: Single N-channel ; ID DC: 0.3 A; RDS(on): 5000@10V5300@4.5V mOhm; VDSmax: 60 V | Original | 101.34KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170TR | Philips Semiconductors | N-channel enhancement mode field-effect transistor | Original | 101.36KB | 13 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF170T/R | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 41.83KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF4391 | NXP Semiconductors | PMBF4391 - N-channel FETs - CRS: 3.5 pF; IDSS: 50 to 150 mA; IDSS max.: 150 mA; IDSS min.: 50 mA; IG: 50 mA; RDS(on): 30 Ohm; toff: 20 ns; ton: 15 ns; -V(P)GS: 4 to 10 V; V(P)GS: 4 V; V(P)GS: 10 V; VDSmax: 40 V | Original | 61.12KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF4391 | Philips Semiconductors | N-channel FETs | Original | 42.15KB | 7 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF4391 | Philips Semiconductors | N-Channel FET | Original | 78.49KB | 4 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMBF4391 | Unknown | Semiconductor Master Cross Reference Guide | Scan | 120.29KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
PMBF Price and Stock
NXP Semiconductors PMBF4391Trans JFET N-CH 40V 150mA Si 3-Pin TO-236AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBF4391 | 18,000 | 1,000 |
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Buy Now | ||||||
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PMBF4391 | 18,035 |
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Nexperia PMBF170,235Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R - Tape and Reel (Alt: PMBF170,235) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBF170,235 | Tape & Reel | 53 Weeks, 1 Days | 30,000 |
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Buy Now | |||||
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PMBF170,235 | 32 Weeks | 10,000 |
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Nexperia PMBF170,215Power MOSFET, N Channel, 60 V, 300 mA, 5 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: PMBF170,215) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PMBF170,215 | Tape & Reel | 53 Weeks, 1 Days | 27,000 |
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Buy Now | |||||
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PMBF170,215 | Cut Strips | 12 | 99 Weeks | 1 |
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PMBF170,215 | Cut Tape | 46 | 1 |
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| PMBF170,215 | Tape & Reel | 46 | 100 |
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| PMBF170,215 | Tape & Reel | 3,000 |
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PMBF170,215 | 5,700 | 1 |
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PMBF170,215 | 200 |
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Buy Now | |||||||
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PMBF170,215 | 1 |
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Get Quote | |||||||
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PMBF170,215 | 100,363 |
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Get Quote | |||||||
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PMBF170,215 | 30 Weeks | 27,000 |
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Get Quote | ||||||
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PMBF170,215 | 32 Weeks | 3,000 |
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Get Quote | ||||||
TUK Ltd KAPMBFNL#20Pnl Mnt Adaptor, Low Profile, Blk, 20/Pk; |Tuk KAPMBFNL#20 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KAPMBFNL#20 | Pack | 21 | 5 |
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Buy Now | |||||
O-Z Gedney NEPMBFControl Operator; |Oz Gedney NEPMBF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NEPMBF | Bulk | 1 |
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Buy Now | ||||||
PMBF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MBB691
Abstract: MBB076 MAR 745 TRANSISTOR MBB692 MSB003 PMBF107
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Original |
m3d088pmbf107sc13bsca54+6 | |
13006 TRANSISTOR
Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
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Original |
pmbfj620ot363msc89513006 transistor+6 | |
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Contextual Info: PMBFJ110 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5 |
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pmbfj110 | |
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Contextual Info: PMBFJ310 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0 |
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pmbfj310 | |
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Contextual Info: PMBFJ176 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30.0 V(BR)GSS (V)30.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)20.0 V(GS)off Min. (V)1.0 |
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pmbfj176 | |
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Contextual Info: PMBFJ111 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0 |
Original |
pmbfj111 | |
philips ET-E 60Contextual Info: Philips Semiconductors • bbSBTBl D02HQ41 OTB HIAPX AMER PH IL IPS /DISCRETE N-channel field-effect transistors PMBF5484; PMBF5485; PMBF5486 QUICK REFERENCE DATA FEATURES MIN. MAX. UNIT - 25 V PMBF5484 1 5 mA PMBF5485 4 10 mA • Low noise SYMBOL • Interchangeability of drain and |
OCR Scan |
d02hq41pmbf5484pmbf5485pmbf5486+2 | |
PMBFJ174Contextual Info: bb Sim i 002405b 524 H A P X N APIER P H IL IP S/ D IS CR ET E b?E I> PMBFJ174 to 177 _ J V _ P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in plastic microminiature SOT-23 envelopes. They are intended for application with analogue switches, choppers, commutators etc. using SMD |
OCR Scan |
002405bpmbfj174ot-23rmbfj174 | |
pmbfj174
Abstract: PMBFJ174 to 177 SMD 4B0
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OCR Scan |
pmbfj174ot-237z94962pmbfj174 to 177+1 | |
PMBFJ620,115Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken |
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pmbfj620ot363pmbfj620,115 | |
pmbfj310Contextual Info: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION |
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pmbfj308pmbfj309pmbfj310 | |
SNW-EQ-608
Abstract: transistor d 1862
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OCR Scan |
snw-eq-608snw-fq-302asnw-fq-302bpmbf107+2 | |
PMBFJ108
Abstract: MAM385 PMBFJ109 PMBFJ110
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Original |
pmbfj108pmbfj109pmbfj110mam385 | |
pmbfj174
Abstract: marking p6s P6S SMD
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pmbfj174mam386marking p6sp6s smd | |
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Contextual Info: PMBFJ108 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)3.0 |
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pmbfj108 | |
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Contextual Info: PMBFJ113 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)40.0 V(BR)GSS (V)40.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V).5 |
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pmbfj113 | |
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Contextual Info: PMBFJ109 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25.0 V(BR)GSS (V)25.0 I(D) Max. (A) I(G) Max. (A)50.0m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)150õ I(GSS) Max. (A)3.0n @V(GS) (V) (Test Condition)15.0 V(GS)off Min. (V)2.0 |
Original |
pmbfj109 | |
MRC172
Abstract: PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171
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Original |
pmbf5484pmbf5485pmbf5486mam385+4 | |
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Contextual Info: P h ilip s C o m p o n e n t s Data sheet status Product specification date of issue November 1990 PMBF107 N-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA FEATURES SYM BOL PARAM ETER • Direct interface to C-M O S, TTL, |
OCR Scan |
pmbf107vcb711003b2g5bf107 | |
field-effect transistor
Abstract: MRC160 pmbf4416a TRANSISTOR D 471
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OCR Scan |
pmbf4416pmbf4416amam385f4416a+5 | |
PMBFJ174Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel |
Original |
pmbfj174mam386r77/02/8 | |
PMBF4416
Abstract: PMBF4416A
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OCR Scan |
bb53q31pmbf4416pmbf4416add240md | |
TRANSISTOR SMD MARKING CODE pKX
Abstract: TRANSISTOR SMD MARKING CODE DM smd code pKX TRANSISTOR SMD MARKING CODE ld smd transistor marking BL SMD TRANSISTOR MARKING code DD SMD CODE TRANSISTOR JA PMBF170 TRANSISTOR SMD MARKING CODE 2A SMD SOT23 transistor PMBF170
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OCR Scan |
pmbf170200rnabbs3t31transistor smd marking code pkx+8 | |
TRANSISTOR code marking 2FI sot23
Abstract: PMBF107 UCB710 U34 marking 11 sot23
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OCR Scan |
pmbf107003b20stransistor code marking 2fi sot23ucb710+2 | |