13006 Search Results

SE 13007

Abstract: D 13007 K 13007 T 13007 E 13007 p 13007 j 13007 D 13007 13007t E 13007 0
Contextual Info: A E G CORP 1?E D 0 Q S cm5t> QQQ' l bMB 3 • TE 13006 TE 13007 TTEÜ1-? 5E3£SI> j e le c tro n ic Oeat* T«hnotog«s r - 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

Contextual Info: This document was generated on 05/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 130061-0030 Active Brad Mini-Change® Products Mini-Change® Brad Power Cordset, 3 Poles, Female, Straight, 14/3 AWG PVC Drop

mj 13007

Abstract: mj 13005 13005 A mj 13009 13005a 13009 13007 13005 13005 2 MJE13005A
Contextual Info: pxfl f\ second source devices produits seconde source BUX BUX MJE MJE MJE MJE MJE M JE MJE MJE MJE Type v CEO V VCEX (V) 84 85 13004 13005 13005 A 13006 13007 13007 A 13008 13009 13009 A 400 450 300 400 400 300 400 400 300 400 400 800 1000 600 700 850 600

Contextual Info: This document was generated on 05/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: Overview: Description: 130061-0057 Active Brad Mini-Change® Products Mini-Change® Brad Power Cordset, 3 Poles, Male, Straight, 14/3 AWG PVC Drop

D 13007 K

Abstract: T 13007 13007 j 13007 E 13007 0 13007 applications E 13007 13007 TRANSISTOR F 13007 m 13007
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T - 33-13 Silicon NPN Power Transistors A p p lications: Sw itching m ode power supply, electronic ballast Features: • In multi diffusion technique

transistor 13007

Abstract: 13007 TRANSISTOR transistor E 13007 D 13007 K D 13007 K transistor 13006 TRANSISTOR j 13007 TRANSISTOR 13007 transistor m 13007 ballast 13007 TRANSISTOR
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • ô'îSOO'îb D D D % 4 3 T ■ ALÛG TE 13006 * TE 13007 9electronic Cr««ifv«l«chno<ogws T- 33-13 Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast Features: • In multi diffusion technique

NTC 303

Abstract: robot control PS18 SV18
Contextual Info: VDI 130-06P1 VII 130-06P1 VID 130-06P1 VIO 130-06P1 IC25 = 121 A = 600 V VCES VCE sat typ. = 2.3 V IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VII X15 SV18 NTC X16 T16 NTC X16 IK10 F1 B3 PS18 X15 L9 VX18 LMN

Contextual Info: 120-2012-000 EMBER EM35 X NCP BREAKOUT BOARD TECHNICAL SPECIFICATION The Silicon Labs’ Ember EM35x Network Co-Processor NCP Breakout Board contains the hardware peripherals for the development and deployment of a low-data-rate, low-power ZigBee application on a host micro interfacing

D 13009 K

Abstract: 13006D P10531
Contextual Info: Switchcraft Page 1 of 4 Previous Page | Return to Index | Next Page LEVER SWITCHES LEV-R SWITCH SERIES 3000, 13000 1. Series 3000 2. Series 13000 click here to download a schematic drawing you will need to have Adobe Acrobat installed on your system to do this

A84 marking code

Abstract: AXH marking AXH 2510
Contextual Info: V I S H AY I N T E R T E C H N O L O GY, I N C . INTERACTIVE data book LOW VOLTAGE POWER CAPACITORS ViShAy ESTA Notes: 1. To navigate: a Click on the Vishay logo in any document to go to the overview page. b) Click on the document name within the overview to go directly to the

Contextual Info: Ordering number : ENA0224 Monolithic Linear IC LA75501V PAL-compatible Adjustment-free IF Signal Processing VIF+SIF For Use in TV/VTR Applications Overview This LA75501V is PAL-compatible adjustment-free IF signal processing (VIF+SIF) for use in TV/VTR applications.

costa rica 10k trimpot

Abstract: 25T48R12 25T48R5 20Hz-20MHz
Contextual Info: TELCOM-PAC 25/30 WATT DC/DC CONVERTERS FOR TELECOMMUNICATIONS KEY FEATURES D esigned F or T elecom m unications & W ide Input A pplications Input/O utput Isolated S hort C ircuit Protection Pi Input Filter N o D erating To 71 °C D esigned T o M eet FC C SEC 15, S ub-part J,

2SC102 transistor

Abstract: 2N2342 2sc102 TK30556 2N2902 M10A
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C

13006 TRANSISTOR

Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

K934

Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1
Contextual Info: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no

Omron TL-X proximity

Contextual Info: C500-IDS01-V1/IDS02 ID Sensor Revised May 1990 Written and Produced for OMRON by: Brent Winchester Koji Suzuta DATEC Inc.
 Notice: OMRON products are manufactured for use according to proper procedures by a qualified operator and only for the purposes described in this manual.

E 13007-1

Abstract: transistor E 13007 13007 applications comparator circuit using op-amp AN-344 C1995 LF13006 LF13007 LF411 LF412
Contextual Info: National Semiconductor Application Note 344 March 1984 Some basic circuit configurations for using the 13006 and LF13007 are shown in Figures 1 through 4 In each case only the Digital Gain Set and an op-amp are required although in some instances the amplifier may need external

OSRAM 0-10V dimmer

Abstract: SCHEMATIC dimmer control 51519 Sylvania OSRAM LM10L OT75 CS042 51512 sylvania
Contextual Info: Product Inform ation Bulletin D istribu ted by LINEARIight Flex Top Colormix U llW d V w T e c h n i c ^ L a m p / F a x :7 8 1 ,9 3 8 .5 8 6 7 • Flexible circuit board with a self-adhesive backing • Dynamic colored illumination • Each LED contains individually powered red. green

S JE 13003

Abstract: 13003 h 6d SE 13003 13003 sd JE 13003
Contextual Info: NOT E S L MATERIALS: SHI ELD — D E E P DRAW S T E E L . HO U S I N G CONTACTS — COPPER ALLOY. M I C R O C R O S S GROU N D — C O P P E R 3 1.50 1.240 24 .1 3 R E F . DIM." B" E . C . ' .950 TAIL DIM ." A" P . C . TAIL LENGTH 2. R U A T I N G : SEE 3. P R O D U C T

PMBFJ620,115

Contextual Info: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken

mcc 90-12

Abstract: MCC 90-16 abb mcc 90-12 ASEA thyristor ABB thyristor modules mcc 250 thyristor MCC 90-15 ABB thyristor modules MCC 65 MCC 90-14 MCC 90
Contextual Info: A S E A BROüJN/ABB "T -2 L 5 -2 3 SEMICON ES! Phase control Thyristor-Modules Netz-Thyristor-Module D aten p ro D iode o d e r T h y ris to r/d a ta p e r d io d e o r th y r is to r /les ca racté ristiq u es se ra p p o rte n t à 1 d io d e ou à 1 th y ris to r

Contextual Info: WMl 1-30 POSITKONC MDUSTRCS BELIEVES THE DATA ON THIS DRAWMG TO B E RELIABLE, SINCE THE TECHMCAL INFORMATION IS GWEN FREE OF CHARGE. THE USER EMPLOYS SUCH INFORMATION AT H 6 OWN DISCRETION AND RISK. FOSTTRONC INDUSTRIES ASSUM ES NO RESPO NSBU TY FOR RESULTS OBEMNED OR DAMAGES

Contextual Info: Series 8XXX Elevator Sockets with Bifurcated Contacts FEATURES: • Ideal for elevating devices displays, switches, etc. to desired level with .260 to 1.250 [6.60 to 31.75] height extension. SPECIFICATIONS: • Standard socket body is red UL 94-HB Glass-filled Nylon.

normes cable

Abstract: 13007T mj 13008 EFFET DE HALL 13007 T Se 13007 PAR/PDS3S140 PAR/DMG9N65CT PAR/AP13005 PAR/DF06S
Contextual Info: Normes Informations techniques CEM Compatibilité électromagnétique CEM Informations générales La considération de la compatibilité électromagnétique sert à éviter ou du moins à minimiser les effets électromagnétiques, aussi bien sur des appareils, installations ou systèmes que sur des matières vivantes ou inertes. Les méthodes adéquates de mesure et de test, ainsi que les valeurs