MRC166 Search Results

MRC165

Abstract: PMBF4416 PMBF4416A MRC168 mrc160
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF4416; PMBF4416A N-channel field-effect transistor Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A

MRC172

Abstract: PMBF5484 marking code 10 sot23 PMBF5485 PMBF5486 MRC165 MRC171
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification PMBF5484; PMBF5485; PMBF5486 N-channel field-effect transistors

field-effect transistor

Abstract: MRC160 pmbf4416a TRANSISTOR D 471
Contextual Info: Philips Semiconductors Product specification N-channel field-effect transistor PMBF4416; PMBF4416A FEATURES • Low noise • Interchangeability of drain and source connections • High gain. n DESCRIPTION N-channel symmetrical silicon junction FETs in a surface-mountable

bf861 application

Contextual Info: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

PMBF4416

Abstract: PMBF4416A
Contextual Info: Philips Semiconductors_ bb.53^31 DDSMOBS 6TT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E J> QUICK REFERENCE DATA • Low noise SYMBOL • Interchangeability of drain and source connections

mrc145

Abstract: MRC147 mrc150 BF556A BF556B BF556C mrc144 MRC149
Contextual Info: BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken

BF861A

Abstract: BF861B BF861C BFS10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 14 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C

BF861A

Abstract: BF861B BF861C BFS10
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors 1995 Apr 14 Philips Semiconductors Product specification N-channel junction FETs BF861A; BF861B; BF861C

BF556A_BF556B_BF556C

Contextual Info: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

AM/Tuner

Abstract: BF861A BF861B BF861C
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF861A; BF861B; BF861C N-channel junction FETs Product specification Supersedes data of 1995 Apr 14 File under Discrete Semiconductors, SC07 1997 Sep 04 Philips Semiconductors Product specification N-channel junction FETs

Contextual Info: b b 5 3 ^31 0 0 2 4 0 3 5 Philips Semiconductors ATT Product specification PMBF4416; PMBF4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE FEATURES APX b7E D QUICK REFEREN CE DATA • Low noise SYM BOL • Interchangeability of drain and source connections

BF861A_BF861B_BF861C

Contextual Info: SO T2 3 BF861A; BF861B; BF861C N-channel junction FETs Rev. 5 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical junction field effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against

Contextual Info: 3 SO T2 BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Rev. 4 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.

MRC149

Abstract: MRC148 mrc151 mrc150 BF556A BF556B BF556C mrc144 mrc140 mrc145
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification

MRC149

Abstract: MRC147 mrc150 MRC142 BF556C BF556A BF556B MRC144 *c143 mrc145
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification