IXFN Search Results

IXFN Datasheets (180)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFN100N10	IXYS	HIPERFET Power MOSFTETs	Scan	PDF	297.11KB	8
IXFN100N10	Sharp	100 V, 100 A, HIPerFET power MOSFET	Scan	PDF	49.59KB	1
IXFN100N10S1	IXYS	100V HiPerFET power MOSFET with schottky diodes	Original	PDF	100.07KB	2
IXFN100N10S2	IXYS	100V HiPerFET power MOSFET with schottky diodes	Original	PDF	100.07KB	2
IXFN100N10S3	IXYS	100V HiPerFET power MOSFET with schottky diodes	Original	PDF	100.07KB	2
IXFN100N20	IXYS	200V HiPerFET power MOSFET	Original	PDF	113.5KB	4
IXFN100N25	IXYS	250V HiPerFET power MOSFET	Original	PDF	71.43KB	2
IXFN100N50P	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 90A SOT-227B	Original	PDF		5
IXFN100N50Q3	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 500V 82A SOT-227	Original	PDF		5
IXFN100N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH	Original	PDF	134.04KB
IXFN102N30P	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 300V 88A SOT227B	Original	PDF		2
IXFN102N30P	IXYS	PolarHT HiPerFET Power MOSFET	Original	PDF	106.38KB	5
IXFN106N20	IXYS	200V HiPerFET power MOSFET	Original	PDF	113.5KB	4
IXFN110N60P3	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 600V 90A SOT227	Original	PDF		5

IXFN110N85X	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 850V 110A SOT227B	Original	PDF	133.7KB
IXFN120N20	IXYS	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 120A SOT-227B	Original	PDF		4
IXFN120N20	IXYS	200V HiPerFET power MOSFET	Original	PDF	70.4KB	2
IXFN120N20	IXYS	HiperFET Power Mosfets	Original	PDF	143.38KB	2
IXFN120N20P	IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	561.16KB	5
IXFN120N65X2	IXYS	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 108A SOT-227	Original	PDF	136.16KB

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Littelfuse Inc IXFN360N10T MOSFET N-CH 100V 360A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN360N10T	Tube	838		1	1 $28.56 10 $20.89 100 $17.76 1000 $17.76 10000 $17.76	Buy Now
Verical	IXFN360N10T		1,310		10	1 - 10 $19.56 100 $17.54 1000 $17.54 10000 $17.54	Buy Now
Arrow Electronics	IXFN360N10T		1,310	25 Weeks	10	1 - 10 $20.79 100 $17.54 1000 $17.54 10000 $17.54	Buy Now
IXYS Corporation IXFN520N075T2 MOSFET N-CH 75V 480A SOT227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN520N075T2	Tube	791		1	1 $34.52 10 $25.53 100 $22.52 1000 $22.52 10000 $22.52	Buy Now
TTI	IXFN520N075T2	Tube	4,390		10	1 - 10 $22.86 100 $21.97 1000 $21.97 10000 $21.97	Buy Now
IXYS Corporation IXFN60N80P MOSFET N-CH 800V 53A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN60N80P	Tube	765		1	1 $45.07 10 $33.87 100 $31.38 1000 $31.38 10000 $31.38	Buy Now
Mouser Electronics	IXFN60N80P		1,151			1 $45.07 10 $33.87 100 $31.37 1000 $31.37 10000 $31.37	Buy Now
Verical	IXFN60N80P		244		2	1 - 10 $53.11 100 $53.11 1000 $53.11 10000 $53.11	Buy Now
TTI	IXFN60N80P	Tube			300	1 - 10 - 100 - 1000 $31.06 10000 $31.06	Buy Now
IXYS Corporation IXFN32N100P MOSFET N-CH 1000V 27A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN32N100P	Tube	623		1	1 $37.75 10 $28.07 100 $25.18 1000 $25.18 10000 $25.18	Buy Now
New Advantage Corporation	IXFN32N100P		201		1	1 - 10 - 100 $79.95 1000 $73.80 10000 $73.80	Buy Now
IXYS Corporation IXFN210N20P MOSFET N-CH 200V 188A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFN210N20P	Tube	392		1	1 $46.24 10 $34.80 100 $32.38 1000 $32.38 10000 $32.38	Buy Now
New Advantage Corporation	IXFN210N20P		225		1	1 - 10 - 100 $93.77 1000 $86.55 10000 $86.55	Buy Now

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IXFN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
73N30 Abstract: "SOT-227 B" dimensions SOT-227 Package ixfk73n30 Contextual Info: HiPerFETTM Power MOSFETs V DSS IXFK 73 N 30 IXFN 73 N 30 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 RDS on 45 mΩ Ω Ω 45 mΩ 300 V 73 A 300 V 73 A trr ≤ 200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK	Original	O-264 73N30 "SOT-227 B" dimensions SOT-227 Package ixfk73n30	PDF
24N100 Abstract: 23N10 125OC Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.43 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A têê ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC 23N10 125OC	PDF
230N10 Abstract: IXFN 230N10 230N10 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 230N10 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr S Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	230N10 230N10 IXFN 230N10 230N10	PDF
IRM-38 Abstract: 100N20 106N20 IXFK90N20 90N20 IXFN100N20 IXFN106N20 Contextual Info: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS on 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns 23 mW 23 mW 20 mW TO-264 AA Symbol Test Conditions Maximum Ratings	Original	O-264 90N20 100N20 106N20 IXFN90N20 IXFN106N20 IRM-38 106N20 IXFK90N20 IXFN100N20 IXFN106N20	PDF
MOSFET 60n60 Abstract: 60N60 transistor 60N60 TAB 429 H Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 60N60 VDSS ID25 RDS on = 600 V = 60 A = 75 mW D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR	Original	60N60 OT-227 E153432 MOSFET 60n60 transistor 60N60 TAB 429 H	PDF
80n48 Abstract: 80N4 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)	Original	80N48 OT-227 E153432 80n48 80N4	PDF
IXFN 130N30 Abstract: 130N30 125OC Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 130N30 VDSS = 300 V ID25 = 130 A Ω RDS on = 22 mΩ trr < 250 ns D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300	Original	130N30 125OC 728B1 IXFN 130N30 130N30 125OC	PDF
36N60 Abstract: 32N60 IXFN SOT227 fast diode SOT-227 D-68623 Contextual Info: IXFK 32N60 IXFK 36N60 IXFN 32N60 IXFN 36N60 Preliminary Data VDSS HiPerFETTM Power MOSFET ID25 RDS on t rr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A 0.18Ω 0.25Ω 250ns 250ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK)	Original	32N60 36N60 36N60 32N60 250ns O-264 IXFN SOT227 fast diode SOT-227 D-68623	PDF
E 150N10 Abstract: 150N10 100N10 IXFK100N10 IXFN150N10 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFK100N10 IXFN150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C	Original	IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10	PDF
NC240 Abstract: IXFN200N07 Contextual Info: HiPerFETTM Power MOSFET IXFN 200 N07 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions VDSS T J = 25°C to 150°C 70 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 70 V VGS Continuous ±20 V VGSM	Original		PDF
IXFN106N20 Contextual Info: HiPerFETTM Power MOSFET IXFN 106 N20 VDSS 3 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family 2 4 Preliminary data * 1 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous	Original	IXFN106N20 IXFN106N20	PDF
Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 36N100 1000V 36A 0.24Q V,DSS ^D25 R,DS on N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr s Maximum Ratings Symbol Test Conditions v DSS Td = 25°C to 150°C	OCR Scan	36N100	PDF
200N10P Abstract: IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS Contextual Info: Advanced Technical Information PolarTM HiPerFET Power MOSFET VDSS ID25 IXFN 200N10P IXFK 200N10P IXFX 200N10P RDS on = 100 V = 200 A Ω = 7.5 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	200N10P OT-227 E153432 IXFX200N10P IXFN200N10P 200N10P IXFN200N10P TO-227B IXFX200N10P PLUS247 IXFN200N10P IXYS	PDF
Mosfet 75V 120A Abstract: Power Mosfet 75V 120A IXFN240N15T2 Contextual Info: Advance Technical Information IXFN240N15T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 150V 240A Ω 5.2mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN240N15T2 140ns OT-227 E153432 240N15T2 Mosfet 75V 120A Power Mosfet 75V 120A IXFN240N15T2	PDF

IXFN320N17T2 Abstract: ixfn320n 320N17T2 Contextual Info: Advance Technical Information IXFN320N17T2 GigaMOSTM TrenchT2 HiperFETTM Power MOSFET VDSS ID25 = = 170V 260A Ω 5.2mΩ 150ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN320N17T2 150ns OT-227 E153432 320N17T2 IXFN320N17T2 ixfn320n	PDF
ixfn420n10t Abstract: 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16 Contextual Info: Advance Technical Information IXFN420N10T GigaMOSTM Trench HiperFETTM Power MOSFET VDSS ID25 = = 100V 420A Ω 2.3mΩ 140ns RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S G Symbol Test Conditions	Original	IXFN420N10T 140ns OT-227 E153432 420N10T ixfn420n10t 420N10T 420N1 MOSFET 60V 210A F420 IXFN SOT227 DS100199 123B16	PDF
Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ^D25 R DS on Kr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V — 280 A 6 mQ < 250 ns 70 s Maximum Ratings Symbol Test C onditions V v DSS	OCR Scan	280N07	PDF
BT 1496 Abstract: 34N80 diode 931 p 7 Contextual Info: HiPerFETTM Power MOSFETs Single DieMOSFET IXFN 34N80 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr RDS on D S Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS VGSM Continuous Transient	Original	34N80 BT 1496 34N80 diode 931 p 7	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N50 G Preliminary data sheet S = 500 V = 80 A = 50 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500	Original	80N50 OT-227 E153432	PDF
TO-238 Abstract: sn 8400 Contextual Info: I X Y S 1ÔE CORP OOOOtaSS D 5 'T - Z ° \ A S> □IXYS A D V A N C E TEC H N IC AL DATA SH EET* December 1988 DATA SH EET NO. 1300C HiPerFET Power MOSFETs IXFN100N10 N-Channel High dv/dt, Lowtrr, H D M O S™ Family FEATURES:_	OCR Scan	1300C IXFN100N10 O-238 O-238 TO-238 sn 8400	PDF
RM338 Abstract: qfl 289 106N20 IXFK90N20 Contextual Info: IXFK 90N20 IXFN 106N20 inixYS Preliminary Data D ^D S S HiPerFET Power MOSFET IXFK 90N20 200V IXFN 106N20 200V N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Lowtrr Symbol Test C onditions v* DSS Td = 25°C to 150°C 200 200 V vDGR Tj = 25°C to 150°C; RGS = 1 Mi2	OCR Scan	IXFK90N20 IXFN106N20 90N20 106N20 200ns 20mi2 200ns d68623 106N20 RM338 qfl 289	PDF
680-W Abstract: 180N15P IXFN180N15P Contextual Info: PolarHTTM HiPerFET IXFN 180N15P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 150 150 V V VDSS VGSM Continuous	Original	180N15P 03-23-06-C 680-W 180N15P IXFN180N15P	PDF
Contextual Info: HiPerFET Power MOSFETs IXFN26N90 v DSS N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ^D25 ^ D S o n K Symbol TestConditions V DSS Tj = 25°C to 150°C Voo* TJ Vos VGSM 1» Tc= 25°C, Chip capability •dm u Tc= 25°C, puise width limited by TJM	OCR Scan	IXFN26N90 OT-227 E153432 1509C,	PDF
Contextual Info: HiPerFETTM Power MOSFET VDSS ID25 RDS on 0.39 Ω 0.41 Ω IXFN 24N100 1000 V 24 A IXFN 23N100 1000 V 23 A trr ≤ 250 ns Single MOSFET Die Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ	Original	24N100 23N100 24N100 23N100 OT-227 E153432 125oC	PDF

IXFN Search Results

IXFN Datasheets (180)

IXFN Price and Stock

Littelfuse Inc IXFN360N10T

IXYS Corporation IXFN520N075T2

IXYS Corporation IXFN60N80P

IXYS Corporation IXFN32N100P

IXYS Corporation IXFN210N20P

IXFN Datasheets Context Search

73N30

24N100

230N10

IRM-38

MOSFET 60n60

80n48

IXFN 130N30

36N60

E 150N10

NC240

IXFN106N20

200N10P

Mosfet 75V 120A

IXFN320N17T2

ixfn420n10t

BT 1496

TO-238

RM338

680-W