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Vishay Intertechnologies RWR80N49R9FRS73 Through Hole Resistor, 49.9 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR80N49R9FRS73)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RWR80N49R9FRS73	Tape & Reel	500	30 Weeks	500	1 - 10 - 100 - 1000 $20.54 10000 $20.23	Buy Now
Vishay Intertechnologies RWR80N40R2FSB12 Through Hole Resistor, 40.2 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR80N40R2FSB12)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RWR80N40R2FSB12	Bulk	100	30 Weeks	1	1 $4.98 10 $4.98 100 $4.98 1000 $4.98 10000 $4.98	Buy Now
TTI	RWR80N40R2FSB12	Box	200		100	1 - 10 - 100 $24.15 1000 $23.43 10000 $22.97	Buy Now
CTS Corporation 580N400X2DAT - Tape and Reel (Alt: 580N400X2DAT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	580N400X2DAT	Tape & Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 $21.68 10000 $18.86	Buy Now
CTS Corporation 580N480X2ITT - Tape and Reel (Alt: 580N480X2ITT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	580N480X2ITT	Tape & Reel		16 Weeks	1,000	1 - 10 - 100 - 1000 $22.10 10000 $19.22	Buy Now
Vishay Intertechnologies RWR80N42R2FSS73 Through Hole Resistor, 42.2 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR80N42R2FSS73)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RWR80N42R2FSS73	Tape & Reel		18 Weeks	500	1 - 10 - 100 - 1000 $35.10 10000 $34.56	Buy Now

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80N4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
80n48 Abstract: 80N4 Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 G Preliminary data sheet S Symbol Test Conditions = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 S Maximum Ratings miniBLOC, SOT-227 B (IXFN)	Original	80n48 ot-227 e153432 80n4	PDF
Contextual Info: Or, Call Customer Service at 1-80N48-B132 USA Only OPA121 BURR-BROWN m i CM £ o FEATURES APPLICATIONS • • • • • • • • • • • LOW NOISE: 6nV//Hz typ at 10kHz LOW BIAS CURRENT: 5pA max LOW OFFSET: 2mV max LOW DRIFT: 3nV/°C typ HIGH OPEN-LOOP GAIN: 110dB min	OCR Scan	1-80n 48-b132 opa121 10khz +2110db 17313l5	PDF
HQ700-80N4 Abstract: 80N4 Contextual Info: Surface Mount 4-Port Quadrature Hybrid 70 MHz, 10% Bandwidth Package Style 80 HQ700-80N4 Key Features • • • Insertion Loss: 0.20 dB Solder Reflow to +240°C Phase Balance 2 degrees Guaranteed Specifications TYP ±1 MAX ±3 ± 0.25 ± 0.50 Insertion Loss dB	Original	hq700-80n4 80n4	PDF
80N40 Abstract: 80N4 80N40B2 Contextual Info: Advance Technical Data HiPerFASTTM IGBT VCES IC25 VCE sat tfi typ IXGH 80N40B2 Optimized for 10-30 KHz hard switching and up to 300 KHz resonant switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 400 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	80n40b2 ic110 o-247 728b1 +4123b1 065b1 80n40 80n4	PDF
Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 80N48 = 480 V = 80 A = 45 mW RDS on D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Symbol VDSS ID25 Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C 480	Original	80n48 ot-227 e153432	PDF
Contextual Info: 80N4LL N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LL 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V	Original	stsj80n4ll	PDF
80N4 Contextual Info: 80N4LL N-CHANNEL 40 V - 0.0045 Ω - 80 A PowerSO-8 STripFET™ MOSFET FOR DC-DC CONVERSION TARGET SPECIFICATION Table 1: General Features TYPE 80N4LL • ■ ■ ■ ■ Figure 1: Package VDSS RDS on ID 40 V < 0.005 Ω 80 A TYPICAL RDS(on) = 0.0045 Ω @ 10V	Original	stsj80n4ll 80n4	PDF
JESD97 Abstract: STSJ80N4LLF3 Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V	Original	stsj80n4llf3 jesd97	PDF
Contextual Info: 80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production data Features TAB Order code VDS RDS on max ID 80N4F6 40 V 6.3 mΩ 80 A • Low gate charge 3 • Very low on-resistance 2 1	Original	stu80n4f6 80n4f6ny docid023839	PDF
Contextual Info: 80N4F6 Automotive-grade N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in a DPAK package Datasheet − production data Features TAB Order code VDS RDS on max ID 80N4F6 40 V 6 mΩ 80 A • Designed for automotive applications and	Original	std80n4f6 aec-q101 docid026016	PDF
Contextual Info: 80N4F6, 80N4F6 N-channel 40 V, 5.5 mΩ typ., 80 A STripFET VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet − production data Features Order codes 80N4F6 TAB TAB 80N4F6 3 3 2 1 1 DPAK VDS RDS on max 6.0 mΩ 40 V ID 80 A 6.3 mΩ	Original	std80n4f6 stu80n4f6 docid023839	PDF
Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) ) s ( ct 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V	Original	stsj80n4llf3	PDF
JESD97 Abstract: STSJ80N4LLF3 Contextual Info: 80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8 STripFET™III Power MOSFET for DC-DC conversion General features Type VDSS RDS on ID 80N4LLF3 40V 0.005Ω 18A(1) 1. This value is rated according to Rthj-pcb • Optimal RDS(on) x Qg trade-off @ 4.5V	Original	stsj80n4llf3 jesd97	PDF