280N07 Search Results

Contextual Info: □ IXYS Advanced Technical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ^D25 R DS on Kr N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr V — 280 A 6 mQ < 250 ns 70 s Maximum Ratings Symbol Test C onditions V v DSS

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 280N07 G Preliminary data S Test Conditions RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol VDSS ID25 S Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Contextual Info: Advanced Technical Information HiPerFET Power M OSFETs Single Die M OSFET IXFN 280N07 VDSS ^D25 D DS on 'r r N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Tj = 25°Cto150°C 70 V T,J = 25 °C to 15 0 °C ;’ R~. = 1 M fl öS 70

Contextual Info: HiPerFETTM Power MOSFETs Single Die MOSFET IXFN 280N07 VDSS ID25 RDS on trr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data S S Symbol Test Conditions VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MW

280N07

Contextual Info: IXFN 280N07 HiPerFETTM Power MOSFETs Single Die MOSFET VDSS ID25 RDS on t rr D N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr G Preliminary data sheet S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 70 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

C1162

Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

sd 20n60

Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
Contextual Info: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

C1146

Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Contextual Info: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)

C1218

Abstract: C1222 ixfh 60N60 IXFX 44N80 C1138 C1238 20n80 C1228 C1172 IXFN 230N10 230N10
Contextual Info: HiPerFET F-Series - . IXYS - - . •■ ■ ■ »♦ ■■ * 3* ■ V . Contents v DSS max V D ^CKcont DS on) Tc = 25 °C Tc = 25 °C A a TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247™ (IXFR) TO-268