HM6514 Search Results

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

IS9-2100ARH-8

Abstract: 26clv32 5962F9954701VYC 5962F9568902VXC 5962R9666501VEC ld smd transistor 5962F9954701VXC 5962R9575101VRC 5962F9674202V9A 5962F9666302VXC
Contextual Info: Military/Space 17 2008 P RODUCT S ELECTION GUIDE Military ICs pg. 17-2 Defense IC Test Flows (pg. 17-6) Defense ICs (pg. 17-2) MIL-PRF-38535 Class Q (pg. 17-6) Auxiliary Output (pg. 17-2) Comparators (pg. 17-4) EEPROM (pg. 17-2) Micro + Peripherals (pg. 17-4)

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

6514

Abstract: HM65 6514 ram
Contextual Info: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

24502BVA

Abstract: 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM-6514
Contextual Info: HM-6514 TM 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and

m6508

Abstract: 6505 octagon HM-6513 6513 HM-6505 HM-6512 HM-6514 logic gate diagram of ic 4096X1
Contextual Info: fW ï -./U/L/lP HARRIS H M -6 5 0 5 SEM ICO NDUCTOR P R O D U C T S DIVISI ON A DIVISION OF H A R RIS CORPO RATION 4096 x 1 C M O S RAM Advance Information Pinout Features T O P V IE W 250ßW M AX. • LO W PO W ER S T A N D B Y • LO W POW ER O P E R A T IO N

schematic diagram 180v dc motor speed controller

Abstract: schematic diagram 48v dc motor speed controller 300khz 600V mosfet driver IC e bike motor controller CCTV SCHEMATIC camera board e-bike tv lcd Schematic Power Supply ISL2111 ISL24822 pwm e-bike
Contextual Info: Design Tools/Applications 18 2009 P RODUCT SELECTION GUIDE Design Tools Applications Support on the Web . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-2 iSim Online Design Simulation Tool . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18-2

um 6516

Contextual Info: HARRIS S H S E M I C O N D U C T O R M - 6 5 1 / 8 8 3 2K x 8 C M O S RAM August 1996 Description Features • 6 The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This

74c920

Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Contextual Info: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

HM1-6514

Abstract: 6514b
Contextual Info: HM-6514/883 S E M I C O N D U C T O R 1024 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device

HM-6516

Abstract: HM1-6516
Contextual Info: HM-6516/883 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6516/883 is a CMOS 2048 x 8 Static Random

74c920

Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Contextual Info: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ­ ITSU EDI HIT­ ACHI IDT M ITSU­ MOT­ BISHI OROLA N A T­ IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous

5962F0052301VXC

Abstract: 5962R9578701VXC HI-0546 5962F9666301QXC 5962R9665101VXC CD4015BD 5962F9568902VXC 5962F9956002VXC 5962F0052301VYC 5962F9562601VYC
Contextual Info: Military/Space 15 2006 P RODUCT S ELECTION GUIDE Military/Space pg. 15-1 Defense IC Test Flows (pg. 15-5) Defense Selection Chart (pg. 15-2) MIL-PRF-38535 Class Q (pg. 15-5) Buffers (pg. 15-2) Multiplexers (pg. 15-3) Operational Amplifiers, Single (pg. 15-2)

Contextual Info: HM-6516/883 MARIRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM January 1992 Features Description • This Circuit Is Processed In Accordance to Mil-Std-883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory.

STR 61001

Abstract: harris dx10 HM-6100 prom 256x4 bit DX10 HD-6101 HM-6322 HM-6512 HM-6561 HM-6661
Contextual Info: - - /TV L y f • ■ i^ H HARRIS SEMICONDUCTOR I g I« «— f/j f-io M l \ / l i n I S u /ic irtM PDDnm R O D U i/» C T tc S DnIV IS IO N ■ A DIVISION OF HARRIS CO RPO RA TIO N 1 ■■W ■ 64 x 12 C M O S R A M Pinout Features T O P V IE W • LO W POWER S T A N D B Y

6514

Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
Contextual Info: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N

18-PIN

Abstract: HM6514 IM6514 IM6514CJN IM6514IJN IM6514IPN IM6514MFN IM6514MJN
Contextual Info: IM 6514 4 0 9 6 Bit 1 K X 4 CMOS Static RAM ; y FEATURES GENERAL DESCRIPTION • • • • • • • • • The IM6514 is a high speed, low power CMOS Static RAM organized 1024 words by 4 bits. Input and three state out­ puts are TTL com patible and allow for direct interface with

250ca

Abstract: B514C HM-6514C-9
Contextual Info: Specifications HM-6514C-9 ABSOLUTE MAXIMUM RATINGS Supply Voltage - V C C -G N D OPERATING RANGE -0.3V to +8.0V Input or Output Voltage Applied Storage Temperature Operating Supply Voltage Industrial (-9) (GND -0.3V) to (G N D +0.3V ) -6 5 °C to + 1 5 0 °C

6516

Contextual Info: HM-6516/883 Semiconductor 2K March 1997 X 8 CMOS RAM Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved

CDP18S601

Abstract: CDP1802CD MPM-206 RCA cosmac 1802 CD4061 CDP18S012 CDP1802CE RCA-CDP1802 im6508 CDP18S007
Contextual Info: RCA COS/MOS Memories, Microprocessors, and Support Systems This DATABOOK contains complete technical in­ formation on the full line of COS/MOS memory and microprocessor integrated circuits, COSMAC microboard computer systems, and COSMAC microprocessor support systems available from

Contextual Info: HM-6514/883 TM 1024 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device

Creative IC CT 1975

Abstract: 74s188 programming sd 431 sn74s454 MMI TiW PROM programming procedure ci la 7610 74S472 PROM PROGRAMMING MB7122H 74S287 programming instructions FZH 161
Contextual Info: Part of the Harris Spectrum of Integrated Circuits 44 HARRIS Q Quantum e! scironic#500 Sox 391262 B ra m ie y 1984 Harris Bipolar Digital Data Book 2018 Harris Semiconductor Bipolar Digital Products represent state-of-the-art production in density and performance.