8102404VA Search Results

HM-6514-9

Contextual Info: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

24502BVA

Abstract: 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9 HM3-6514B-9 HM3-6514S-9 HM-6514
Contextual Info: HM-6514 TM 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and

qml-38535

Abstract: M38510-24502BVA as 15-f HM1-6514S8
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye

mi 6514

Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM-6514-9

Abstract: hm6514-9 6514 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514-9
Contextual Info: HM-6514 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes synchronous circuitry to achieve high performance and low

Contextual Info: a HM-6514 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 C M O S RAM August 1996 Description Features Low Power Standby. 125|aW Max T he H M -6 5 1 4 is a 1024 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM1-6514 REFERENCE

Contextual Info: Ì l i H A R R IS H S E M I C O N D U C T O R M - 6 5 1 4 10 24 x 4 CMOS RAM February 1992 Features Description • Low Power Standby. 125|iW Max. The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

1-6514S-9

Contextual Info: H M -6514 h a r r is Ë S E M I C O N D U C T O R Ë Ë WË Ë 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

HM365149 M3-6514-9

Contextual Info: m H A R R IS H S E M I C O N D U C T O R M - 6 5 1 4 1024x 4 CMOS RAM February 1992 Features Description • Low Power Standby.125 iW Max. The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

hm3-6514-9

Contextual Info: H /l/7 -6 5 7 4 h a r r is È S E M I C O N D U C T O R U U W U M 1024 X 4 CM O S RAM August 1996 Features Description • Low Power S ta n d b y . 125^W Max • Low Power O p e ra tio n . 35mW /MHz Max

HM3-6514-9

Abstract: HM-6514-9 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9 HM3-6514B-9 HM3-6514S-9
Contextual Info: HM-6514 S E M I C O N D U C T O R 1024 x 4 CMOS RAM March 1997 Features Description • Low Power Standby . . . . . . . . . . . . . . . . . . . 125µW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

5962L0053605VYC

Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
Contextual Info: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A