6514S Search Results

Contextual Info: O M 6514SS O M 6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Two Isolated IGBTs In A Hermetic SIP Package • High Input Impedance • Low On-Voltage

Contextual Info: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri­

mi 6514

Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
Contextual Info: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

Keithley

Abstract: Picoammeters transistor 2611b Keithley s900 5 DIGIT SINGLE CHIP DIGITAL MULTIMETER NONLINEAR MODEL LDMOS keithley 192 Multimeter service manual 1016w AL 2425 dv battery charger schematic diagram apc back-UPS es 550
Contextual Info: 99 Washington Street Melrose, MA 02176 Phone 781-665-1400 Toll Free 1-800-517-8431 www.keithley.com Visit us at www.TestEquipmentDepot.com research n nanotechnology n semiconductor n wireless n electronic components research n nanotechnology n semiconductor

HM-6513

Abstract: HM-6513-5 HM-6513-9
Contextual Info: 3 HARRIS • SEM ICO NDUCTOR P R O D U C T S DIVISION A DIVISION OF HA RRIS CORPORATION M V I 512 x 4 C M O S R A M Features Pinout LOW POWER STANDBY LOW POWER OPERATION I « J 250/¿W M A X. 35mW/MHz M AX. TO P V IE W A5C T V ^ 18 D v c c A4[ 2 17 ] A 6

HM-6514-5

Abstract: 2114 static ram ic HM-6514-9 Harris HM 6514 RAM 2114 HM-6514 HM-6514B-8 HM-6514S-8 HM-6514S-9 HM-65145
Contextual Info: 1 024 F eatures • • • • • • • • Pinouts Lo w P o w e r S ta n d b y .1 2 5{iW M ax. Lo w P o w e r O p e r a t io n . 3 5 m W /M H z M ax.

Contextual Info: 6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt. 8 Am p , N- Channel IGBT In A H erm e tic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance

Contextual Info: 3J HARRIS H M -6 5 1 4 1 0 2 4 x 4 CMOS RAM Features Pinouts TOP VIEW • Low Power 25jiW Max. • • • • • • • • Low Power O peration. 35mW/MHz Max.

1-6514S-9

Contextual Info: H M -6514 h a r r is Ë S E M I C O N D U C T O R Ë Ë WË Ë 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes

hm3-6514-9

Contextual Info: H /l/7 -6 5 7 4 h a r r is È S E M I C O N D U C T O R U U W U M 1024 X 4 CM O S RAM August 1996 Features Description • Low Power S ta n d b y . 125^W Max • Low Power O p e ra tio n . 35mW /MHz Max

pin diagram AMD FX 9590

Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Contextual Info: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic

HM-6514-9

Contextual Info: H M -6 5 1 4 SI HARRIS 1024 x 4 CMOS RAM Features Pinouts Low Power Max. Low Power O peration. 35mW/MHzMax. Data Retention. @2.0V Min.

TEN 4623

Abstract: 6514-9 ao514 hm6514-9
Contextual Info: S E M IC O N D SECTOR TS D E | 4 3 0 2 5 7 1 ^ D 0 1 0 b T l^ |~ / T-46-23-08 H M -6 5 1 4 h a r r is 1024 x 4 CMOS RAM Pinouts Features Low Power Standby. 125|iWMax. Low Power Operation.