K29793 Search Results

Contextual Info: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in­

hyundai

Abstract: 536X4
Contextual Info: PRELIMINARY A HY51C464 HYUNDAI SEMICONDUCTOR 65,536x4-Bit CMOS Dynamic RAM AUGUST 1986 The HY51C464 offers a maximum standby current of 100 n A when RASs Vdd—0.5V. During standby i.e. refresh only cycles , the refresh period can be extended to 32 ms to reduce the total current re­

dvb t receiver circuit diagram

Abstract: Hyundai DBS raised cosine Hyundai DVB Single Chip L-band Tuner DVB Satellite LP-901 dvb circuit diagram
Contextual Info: •HYUNDAI E L E C T R O N I C S DIGITAL MEDIA DIVISION Advanced Product Information - May, 1996 TM HDM85ÎIP CWeST DVB C om pliant Q P S K Dem odulator K i Introduction The HDM8511P CWeST CWeST=Cable, Wireless, Satellite, Telco is a highly integrated, single-chip variable data rate digital

HY27C64-20

Abstract: HY27C64-15 HY27C64-30 IN3064
Contextual Info: HY27C64 Æ HYUNDAI SEMICONDUCTOR DESCRIPTION 8192x8-Bit CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

Hyundai Semiconductor

Abstract: hy27c64-20 HY27C64A
Contextual Info: HY27C64 Æ HYUNDAI S E M IC O N D U C T O R DESCRIPTION 8192x8-B it CMOS UV EPROM FEATURES The HY27C64 is a high speed 65,536-bit UV erasable and electrically reprogrammable CMOS EPROM fabricated using high-performance HYCMOS technology, ideally suited for applications where

Contextual Info: A £ SEMICONDUCTOR & & Ë g ! H Y 5 lMxi-Bit 1 C 1cmos 0 0dram M131202A-SEP90 DESCRIPTION FEATURES The HY51C1000 is a high speed, low power 1,048,576X1 bit CM OS dynam ic random ac­ cess memory. Fabricated with the HYUNDAI CM OS process, the HY51C1000 offers a fast

hyundai

Abstract: 741 PIN DIAGRAM 741 16 PIN Hyundai Semiconductor HY62C87
Contextual Info: P R E L IM IN A R Y HY62C87 Æ HYUNDAI /• ^ S E M IC O N D U C T O R 6 5 ,5 3 6 x l-B it CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using high­ perform ance HYCMOS process technology.

HY61C16-70

Abstract: HY61C16 61C16 k239
Contextual Info: HYUNDAI ELE CTRO NI CS 03 «tO ^U O Q HTUNUA1 D Ë 1 4t.750ññ OOOOOñT 3 | tL fcU IK U N X C S Ö3 D 0 0 0 0 9 D T?4 b “2 3 -1 2 FEATURES DESCRIPTION The HY61C16 is a high speed, low power, 2048-word by 8-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high

HY51C64-12

Abstract: DYNAMIC RAM 65536 HY51C64L-12 e1986
Contextual Info: s - n o o 0 0 1 8 9 1 m / SEMICONDUCTOR DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynam ic Random Access M emory. Fabricated in CM OS technology, the HY51C64 offers features not provided by NM OS technology-Ripplem ode* fast usable speed, low power, and an average soft error

Contextual Info: PRELIMINARY JL H Y U N D A I /• ^ S E M IC O N D U C T O R HY62C87 65,536xl-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C87 is a high speed, low power, 65,536x 1 bit static CMOS RAM fabricated using highperformance HYCMOS process technology.

Contextual Info: s -n o y 0 0 1 8 9 1 tfY i ^ j& P R E L IM IN A R Y f t SEMICONDUCTOR HY51C64 65,536X1-Bit CMOS Dynamic RAM FEBRUARY 1986 DESCRIPTION The HY51C64 is a high speed 65,536 bit CMOS dynamic Random Access Memory. Fabricated in CMOS technology, the HY51C64 offers features not

pin diagram AMD FX 9590

Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Contextual Info: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic

4096x4

Abstract: Jess Technology HY61C68-25 HY61C68-35 HY61C68-45 HY61C68-55 HY61C68-70 HY61C68L-25 HY61C68L-35 HY61C68L-45
Contextual Info: ¿i < /O / - s ' - 2 _ - PRELIM IN A R Y HY61C68 HYUNDAI SEMICONDUCTOR 4 0 9 6 x4-Bit CM OS S tatic RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using high­ perform ance CMOS process technology. This high