K239 Search Results

Contextual Info: V23990-K239-F-PM MiniSKiiP 2 PACK 1200V/50A MiniSKiiP® 2 housing Features ● Solder less interconnection ● Designed for motor drives up to 7 kW ● Temperature sensor ● Standard 6.5mm and thin (2.8mm) lids,16mm housing ● Optional with pre-applied thermal grease

tyco igbt

Abstract: V23990-K239-F-PM tyco igbt 1200V function of igbt igbt tyco "Power Switches" V23990-K239-F-01-14 break resistor in igbt igbt sixpack SEMIKRON
Contextual Info: V23990-K239-F-PM preliminary datasheet V23990-K239-F-01-14 MiniSKiiP 2nd Gen. SIXPACK Size 2, 1200V / 50A Maximum Ratings / Höchstzulässige Werte Parameter Condition Symbol Values max. Unit VCE 1200 V 42 55 83 A W VGE 74 113 ±20 Tj”125°C VGE=15V VCC=900V

Contextual Info: TOSHIBA K2399 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE IA tt-M O S V 2S K2399 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • •

Contextual Info: V23990-K239-F40-PM MiniSKiiP 2 PACK 1200V/50A Features MiniSKiiP®2 housing ● Solderless interconnection ● Trench Fieldstop IGBT technology 4 Target Applications Schematic ● Servo Drives ● Industrial Motor Drives ● UPS Types ● V23990-K239-F40-PM

K2397

Abstract: K2396 AK2390
Contextual Info: D ig it a l C o r d l e s s T e l e p h o n e IC s Description Device Feature jt/ H U i K2390 S in g le C h ip B a s e B a n d IC 4 S h ift Q P S K M O D E M B u r s t M o d e C o n t r o lle r A D P C M C O D E C w ith A u d io In te r fa c e A K2391 n / A S h ift Q P S K M O D U L A T O R

K2391

Abstract: 1N4148 2N3904 2N3906 SM02
Contextual Info: Endicott Research Group, Inc. K2391 K2391 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com Specifications and Applications Information Dimming Option Valid with the "C" jumper removed approx. 5.5 ms* * should be selected to be

Notebook lcd inverter

Abstract: BLP064V1-T K2392
Contextual Info: Endicott Research Group, Inc. K2392 2601 Wayne St., Endicott NY 13760 607-754-9187 Fax 607-754-9255 http://www.ergpower.com Specifications and Applications Information 02/05/01 8m Class 2 Tube DC to AC Inverter Preliminary The ERG K2392 8m Class low profile dc to ac inverter

K2391

Abstract: Bi-Search K2391 equivalent K2391 DATASHEET 2N3904 2N3906 SM02
Contextual Info: K2391 Specifications and Applications Information 2 Lamp DC to AC Inverter Preliminary 8m Class The ERG K2391 8m Class low profile dc to ac inverter is specifically designed to power the Bi-Search BLP064V1-T LCD display module to a moderate brightness level from a +5 volt dc source.

marking PS FET 6pin

Abstract: fc14 FC18
Contextual Info: 5/6-Pin CPs SAñiYO FC Ser ies T he Sanyo 5 / 6 - p i n c h i p p a c k s are s m a l l - s i z e d p a c k a g e s that facilitate hig h e r - d e n s i t y mounting, that meet a u t o m a t i c m o u n t i n g requirements. ft'e have v a r i o u s P a c k i n g s

c3807

Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
Contextual Info: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4

64kx4

Abstract: HY51C264-12 strobe w24 64Kx4-Bit
Contextual Info: ▲ HY51C264 64K x4-Bit Dual Port CMOS RAM HYUNDAI SEMICONDUCTOR OCTOBER 1986 DESCRIPTION The Hyundai HY51C264 is high-speed, dual access 262, 144 bit 256K CMOS dynamic random-access memory components. Fabricated with CMOS technology, the HY51C264 offers TURBOMODE

2SK2398

Contextual Info: K2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2398 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm

Toshiba TLX-1741-C3M LCD display

Abstract: kcb104vg2ca-a43 LQ088H9DR01 TOSHIBA TLX-1741-C3M KCS077VG2EA-A43 LM32P073 tlx-1741-c3m M170EN04 LP104S06-A1 DMF50081N
Contextual Info: LCD Module to ERG Inverter Part Number Cross-Reference Guide LCD Manufacturer Acer Acer AND AND AND AND AND AND AND AND AND AND AND AND AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics AU Optronics

Contextual Info: PRELIMINARY Æ HYUNDAI iíB L SEMICONDUCTOR HY62C88 16,384x4-Bit CMOS Static RAM AUGUST 1986 DESCRIPTION FEATURES The HY62C88 is a high speed, low power, 16,384x4-bit static CMOS RAM fabricated using high-performance HYCMOS process technology. This high reliability process coupled w ith in­

k2399

Contextual Info: K2399 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV K2399 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.17 Ω (typ.) z High forward transfer admittance

transistor m1104

Abstract: transistor k2333 k3332 G5684 K2040 k3561 k3562 k2333 M5223 k2182
Contextual Info: Contents List of Ordering Codes 5 8 Multilayer Chip Capacitors 11 Multilayer Leaded Capacitors 57 General Technical Information Mounting Instructions for Chip Capacitors 75 88 Measuring and Test Conditions Quality Assurance 99 103 Taping and Packing 111 Symbols and Terms

k2399

Contextual Info: K2399 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type L −π−MOSV K2399 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.17 Ω (typ.) High forward transfer admittance

transistor k2333

Abstract: k3332 k2333 K3561 transistor k2182 K2182 k3562 k3272 transistor k1102 k0392
Contextual Info: Multilayer Chip Capacitors X7R/B Characteristic Features ● ● ● ● l High volumetric efficiency Non-linear capacitance change High insulation resistance High pulse strength b s Applications ● ● ● ● Blocking Coupling Decoupling Interference suppression

2SK2335

Contextual Info: I n t r o d u c t i o n of H i g h - F r e q u e n c y D e v i c e s AM. RM Tuner* C ase O u t l i n e s u n it:m m F o r TRs SANYO:MCP , 1 '-Base, 2:Emi t t e r , 3 : C o l l e c t o r ; R * n~ ANT 1C AM o s e FM u s e ♦ R F Amp L A I 1 37 L AI 1 9 3

K2398

Abstract: jeita sc-65 2SK2398
Contextual Info: K2398 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅤ K2398 ○ スイッチングレギュレータDC−DC コンバータ用 ○ モータドライブ用 単位: mm : RDS (ON) = 22mΩ (標準) z オン抵抗が低い。

2SK2398

Contextual Info: K2398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV K2398 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 22 mΩ (typ.) z High forward transfer admittance : |Yfs| = 27 S (typ.) Unit: mm

k2399

Abstract: 2SK2399
Contextual Info: K2399 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type L −π−MOSV K2399 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm 1.7 ± 0.2 6.8 MAX. 5.2 ± 0.2 : RDS (ON) = 0.17 Ω (typ.) z High forward transfer admittance

k669 transistor

Abstract: k544 K932 transistor mosfet k544 k427 transistor k583 k427 K932 k222 mosfet k546
Contextual Info: SAfÊYO Small-signal Junction FETs/MOSFETs F e a tu re s Case O u tlin e s unit.'m m SANYO:SMCP 1 : S ource, 2 : Drá i n, 3 : Ga te * V e r y low n o is e f ig u r e * L arge |Y f s | * Low g a te le a k c u r r e n t * S m a ll-s iz e d package p e r m ittin g FET-used s e t s to be made s m a lle r

tca 4401

Abstract: HY5164-15
Contextual Info: OCTOBER 1986 DESCRIPTION, FEATURES The HY5164 is a high speed 65,536 bit dynamic Random Access Memory. Fast page mode has the features of fast usable speed, low power, and a typical soft error rate of less than 10 Failures In Time FITfe . The HY5164 is ideally suited for ap­