6516 Search Results

Contextual Info: Available as: RF AMPLIFIER MODEL 6516 TM 6516, 4 Pin TO-8 T4 6516, 4 Pin Surface Mount (SM3) 6516, 4 Pin Flatpack (FP4) 6516,Connectorized Housing (H1) Features Typical Intermodulation Performance at 2 5 0 C • ■ ■ ■ Second Order Harmonic Intercept Point

hm65162c-5

Contextual Info: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C

Contextual Info: HY51V S 65163HG/HGL 4M x 16Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 4,194,304 x 16bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. Features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal

M65162

Abstract: t29 55v
Contextual Info: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: H A R R HM-92560 IS S E M I C O N D U C T O R 256K Synchronous CMOS RAM Module January 1992 Features Description • Low Standby Current. 500|iA The HM-92560 is a high density 256K bit CMOS RAM module. Six­ teen synchronous HM-6516 2K x 8 CMOS RAMs in Leadless Chip

a5324

Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
Contextual Info: HM-6516 TM 2K x 8 CMOS RAM March 1997 Features Description • Low Power Standby. . . . . . . . . . . . . . . . . . . 275µW Max The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low

Contextual Info: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)

hm65161-2

Abstract: 65161
Contextual Info: IlM lI September 198Ç HM 65161 DATA SHEET 2kX8 GENERAL PURPOSE CMOS SRAM FEATURES ACCESS TIME MILITARY: 90 ns max INDUSTRIAL : 80 ns (max) COMMERCIAL : 70 ns (max) LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 25 nW (typ) DATA RETENTION : 4 |iW (typ)

Contextual Info: I lM lI September 1989 HM 65162 DATA SHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 ^W (typ)

Contextual Info: G M 71V 65163A G M 71V 65163A L 4,196,304 WORDS x 16 BIT LG S e m ïc o n Co., Ltd. w w .,f c .i w . CMOS DYNAMIC RAM Description Pin Configuration The GM71V S 65163A/AL is the new generation dynamic RAM organized 4,196,304 words by 16 bits. The GM71V(S)65163A/AL utilizes advanced

um 6516

Contextual Info: HARRIS S H S E M I C O N D U C T O R M - 6 5 1 / 8 8 3 2K x 8 C M O S RAM August 1996 Description Features • 6 The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This

Contextual Info: H A R R IS S E M IC O N D SECTOR 4bE GB « a « D • 4 3 0 S 2 7 1 OQ3T14B G ■ HM-6516/883 2K January 1992 8 CMOS RAM X Features Description • This Circuit is Processed in Accordance to The HM-6516/883 is a CMOS 2048 x 8 Static Random Access Memory.

chip resistor 5r6

Abstract: LINE FEED ISDN schematic induction heating
Contextual Info: Microelectronic Modules Corporation 2601 S. Moorland Road • New Berlin, WI, USA 53151 • 262-785-5909 • fax: 262-785-6516 • sales@mmccorp.com • www.mmccorp.com C21 Line Feed Resistors LFR W/THERMAL FUSE ITU-T K.20 SPECIFICATION ALTERNATE PIN-OUT APPLICATIONS

GR-1089-CORE MMC

Abstract: GR-1089-CORE 107B LINE FEED ISDN schematic induction heating
Contextual Info: Microelectronic Modules Corporation 2601 S. Moorland Road • New Berlin, WI, USA 53151 • 262-785-5909 • fax: 262-785-6516 • sales@mmccorp.com • www.mmccorp.com L41 Line Feed Resistors LFR W/THERMAL FUSE RUS FORM 522 AND BELLCORE GR-1089-CORE SPECIFICATION

HM-6516

Abstract: HM1-6516
Contextual Info: HM-6516/883 S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6516/883 is a CMOS 2048 x 8 Static Random

8403602JA

Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
Contextual Info: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max

16KX16

Contextual Info: f ü H A R R HM-92560 IS S E MI C O N D U C T O R 256K Synchronous CMOS RAM Module January 1992 Features Description • Low Standby Current. 500 iA The HM-92560 is a high density 256K bit CMOS RAM module. Six­ teen synchronous HM-6516 2K x 8 CMOS RAMs in Leadless Chip

HM-6516-5

Abstract: HM-6516 HM6516
Contextual Info: HARRIS SEMICOND SECTOR ‘ÌS D E j M30ES71 DOlDYOb v T-46-23-1Z H M -6516 h a r r is 2K x 8 CMOS RAM Features Pinouts TOP VIEW • Low Power Standby. 275pW/MHz Max. • • • • • • • • • Low Power O .

65162

Abstract: transistor fn 1016
Contextual Info: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS

Contextual Info: ECX-6516-33.3333M Pb RoHS PLEASE NOTE: Due to the inherent proprietary nature of custom part numbers, certain parameters are intentionally excluded from this specification sheet. ECX-6516 -33.3333M Series Ecliptek Custom Crystal Nominal Frequency 33.3333MHz

Contextual Info: MPS 6516 thru’ MPS 6519 PNP SILICON PLANAR EPITAXIAL TRANSISTORS CASE T0-92A 6516 thru' MPS6519 are PNP silicon planar epitaxial transistors designed for general purpose amplifier applications and for com­ plementary circuitry. ebc ABSOLUTE MAXIMUM RATINGS

65162

Abstract: f920p mhs hm65162
Contextual Info: 4TE D • S ñ b ñ 4Sti G O a i S T ? SflE ■ M M H S ìilW ■ W Ih H B _ ~ P -4 L-'Z.'P-, »"ZSeptember 1990 MA TR A M H S HM 65162 DATASHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES « . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max

ma 6116 f5

Abstract: HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b
Contextual Info: HM-65162/883 TM 2kx8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced

Contextual Info: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max.