65162 Search Results

hm65162c-5

Contextual Info: HIM March 1994 HM 65162 DATA SHEET 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL: 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2.0 nW (TYP) DATA RETENTION : 0.8 pW (TYP) . WIDE TEMPERATURE RANGE: - 55 TO +125 °C

M65162

Abstract: t29 55v
Contextual Info: HM-65162/883 H A R R IS X Semiconductor 2K x 8 A synchronous C M O S Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

Contextual Info: M ill DATA SHEET_ HM 65162 2 Kx 8 VERY LOW POWER CMOS SRAM FEATURES . . . . . . . ACCESS TIME COMMERCIAL : 70 NS MAX MILITARY/INDUSTRIAL : 70/85 NS (MAX) . VERY LOW POWER CONSUMPTION ACTIVE: 240 mW(TYP) STANDBY: 2 .0 nW(TYP)

Contextual Info: I lM lI September 1989 HM 65162 DATA SHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max COMMERCIAL : 55/70 ns (max) VERY LOW POWER CONSUMPTION ACTIVE : 240 mW (typ) STANDBY : 2.0 |iW (typ) DATA RETENTION : 0.8 ^W (typ)

8403602JA

Abstract: 8403606JA chip diagram of ram chip 6116 29104BJA 29110BJA 8403603JA HM-65162 a651
Contextual Info: HM-65162 HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M a rc h 1 9 9 7 Features Description • Fast Access Time. 70/90ns Max • Low Standby Max

65162

Abstract: transistor fn 1016
Contextual Info: electronic June 1992 HM 65162 HI-REL DATA SHEET 2kX8 VERY LOW POWER CMOS SRAM FEATU R ES ACCESS TIME : 70/85 ns . TTL COMPATIBLE INPUTS AND OUTPUTS VERY LOW POWER CONSUMPTION ACTIVE : 240 mW typ STANDBY : 2.0 uW (typ) DATA RETENTION : 0.8 (iW (typ) . ASYNCHRONOUS

65162

Abstract: f920p mhs hm65162
Contextual Info: 4TE D • S ñ b ñ 4Sti G O a i S T ? SflE ■ M M H S ìilW ■ W Ih H B _ ~ P -4 L-'Z.'P-, »"ZSeptember 1990 MA TR A M H S HM 65162 DATASHEET 2 kX 8 VERY LOW POWER CMOS SRAM FEATURES « . . . . . . ACCESS TIME MILITARY/INDUSTRIAL : 70/85 ns max

ma 6116 f5

Abstract: HM4-65162/883 65162b F24.6 Package HM1-65162C/883 FN3001 2kx8 2716 65162 hm65162b
Contextual Info: HM-65162/883 TM 2kx8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced

65162C

Abstract: 65162 HM-65162 B-2206
Contextual Info: HM 65162 MATRA MHS 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 × 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced SAJI V

Contextual Info: HM-65162 f f l H A R R IS 2048 x 8 Asynchronous CMOS Static RAM Pinouts Features D IP • Fast Access Time. 55/70/90ns Max. T O P V IE W • Low Standby Current. 50/j A Max.

hm 6164

Abstract: 65162 hm165162 harris HM1-65162 equivalent
Contextual Info: 33 HM-65162/883 2K x 8 Asynchronous CM OS S tatic RAM January 1992 Features Description • This Circuit is Processed in Accordance to Mil-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

HM1-65162

Abstract: HM165162883 hm165162 harris HM1-65162B-9 hm4 SMD hm465162c 8403603JA 8403602JA 8403606JA
Contextual Info: æ HM-65162 2K x 8 Asynchronous OMOS StStiC RAM January 1992 Features Description • Fast Access Time. 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V

Contextual Info: Tem ic 65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low pow er CM O S stalic RAM organized as 2048 x 8 bits. It is m anufactured using the M H S high perform ance CM O S technology. All inputs and outputs o f the H M -65I62 are TTL

ma 6116 f5

Abstract: ma 6116 f6 HM1-65162/883
Contextual Info: HM-65162/883 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Intersil Advanced

TRANSISTOR ww1

Abstract: ww1 47 transistor VW-F10 a05111
Contextual Info: Temic 65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL

65162C

Abstract: 8403602JA 8403606JA
Contextual Info: HM-65162 fü HARRIS S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM M arch 1997 Features Description Fast Access Time. 70/90ns Max T h e H M -6 5 162 is a C M O S 20 48 x 8 S tatic Random A ccess M em o ry m an ufacture d using the H a rris A d va n ce d SAJI V

Contextual Info: Temic 65162 S e m i c o n d u c t o r s 2K X 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL

Contextual Info: HM-65162 33 HARRIS 2048 x 8 Asynchronous CMOS Static RAM Features Pinouts DIP • Fast Access T im e . 55 /7 0 /9 0 n s M ax. • Low Standby C u rre n t. TO P VIEW 50piA M ax.

Contextual Info: h a r r is H M - 65162/883 2K x 8 Asynchronous CMOS S tatic RAM June 1989 F eatures Pino u ts • This Circuit is Processed in Accordance to M il-Std-883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. H M 1- 6 5 1 6 2 /8 8 3 C E R A M IC DIP

HM-65162

Abstract: HM-65162-8 HM-65162B-8 HM-65162B-9 HM-65162C-8 HM-65162S-9
Contextual Info: a HM-65162 H a rris 2048 x 8 Asynchronous CMOS Static RAM Features P inouts DIP • Fast Access T im e . 5 5 /7 0 /9 0 n s Max. TO P VIEW • Low Standby C u rre n t. 50/jA M ax.

F24.6 Package

Abstract: HM1-65162 HM1-65162C/883 6116 static ram 65162
Contextual Info: HM-65162/883 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-65162/883 is a CMOS 2048 x 8 Static Random

65162

Abstract: HM65162 HM-65162
Contextual Info: 65162 2K x 8 Very Low Power CMOS SRAM Description The HM 65162 is a very low power CMOS static RAM organized as 2048 x 8 bits. It is manufactured using the MHS high performance CMOS technology. All inputs and outputs of the HM-65162 are TTL compatible and operate from single 5 V supply thus

8403602JA

Abstract: 8403606JA 29104BJA 29110BJA 8403606ZA HM1-65162-9 HM1-65162B-9 HM4-65162-9 HM4-65162B-9 HM-65162
Contextual Info: HM-65162 S E M I C O N D U C T O R 2K x 8 Asynchronous CMOS Static RAM March 1997 Features Description • Fast Access Time. . . . . . . . . . . . . . . . . . . . 70/90ns Max The HM-65162 is a CMOS 2048 x 8 Static Random Access Memory manufactured using the Harris Advanced SAJI V