29102BJA Search Results
29102BJA Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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29102BJA |
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2K x 8 CMOS RAM | Original | 32.51KB | 6 | ||
29102BJA |
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2K x 8 CMOS RAM | Original | 63.01KB | 6 | ||
29102BJA | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 44.91KB | 1 |
29102BJA Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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a5324
Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
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Original |
HM-6516 HM-6516 55mW/MHz a5324 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 | |
Contextual Info: Ç £\ H A R R HM-6516 I S S E M I C O N D U C T O R 2K J a n u a ry 1992 Features 8 CMOS RAM X Description • Low Power Standby.275|iW Max. • Low Power O peration.55mW/MHz Max. • Fast Access Time. 120/200ns Max. |
OCR Scan |
HM-6516 55mW/MHz 120/200ns | |
HM-6516-9
Abstract: 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9
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Original |
HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja F24.6 Package HM1-6516B-9 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM4-6516-9 | |
HM6516Contextual Info: HM-6516 fü HARRIS S E M I C O N D U C T O R 2K x 8 CMOS RAM March 1997 Description Features Low Power Standby. 2 7 5 Max Low Power O p e ratio n . 55mW/MHz Max Fast Access Time. . 120/200ns Max |
OCR Scan |
HM-6516 55mW/MHz 120/200ns HM-6516 HM6516 | |
EH18
Abstract: HM-6516-9 hm6516-9
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OCR Scan |
HM-6516 HM-6516 EH18 HM-6516-9 hm6516-9 | |
HM-6516-9
Abstract: HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9
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OCR Scan |
HM-6516 HM-6516 HM-6516-9 HM6516-9 HM1-6516 6516-9 HArris 6516 HM-6516B-9 | |
6516
Abstract: 6516-9
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OCR Scan |
HM-6516 HM-6516 6516 6516-9 | |
Contextual Info: HM-6516 HARRIS S S E M I C O N D U C T O R 2K x 8 CMOS RAM August 1996 Description Features • The HM-6516 is a CMOS 2048 x 8 Static Random Access Memory. Extremely low power operation is achieved by the use of complementary MOS design techniques. This low |
OCR Scan |
HM-6516 HM-6516 M3D2271 bfi275 | |
L1129
Abstract: HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516 HM-6516-9 HM1-6516
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OCR Scan |
HM-6516 275nW 55mW/MHz 120/200ns HM-6516 L1129 HM1-6516B-9 8403601ja 29102BJA 8403607JA 8403607ZA HM-6516-9 HM1-6516 | |
HM-6516-9
Abstract: 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 HM-6516
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Original |
HM-6516 HM-6516 55mW/MHz HM-6516-9 8403601ja 29102BJA 8403601ZA 8403607JA 8403607ZA HM1-6516-9 HM1-6516B-9 HM4-6516-9 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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OCR Scan |
1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 |