GM76C28 Search Results

GM76C28-10

Contextual Info: PRODUCT SPECIFICATION REV. J GM76C28 CMOS 16K-BIT STATIC RAM Pin Configuration Description The G M 7 6 C 2 8 10/12 is a 2 ,0 4 8 words X 8 bits asyn­ chronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes

GM76C28A

Abstract: GM76C28A-10
Contextual Info: GM76C28A LG Semicon Co.,Ltd. 2,048 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C28A is 2,048 words x 8 bits asynchronous, static random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring

76C28A-10

Abstract: 76C28 GM76C28A-10 76C28A
Contextual Info: GM76C28A GoldStar GOLDSTAR ELECTRON CO., LTD. Description The GM76C28A is 2,048 words x 8 bits asyn­ chronous, static random access memory on a monolithic CMOS chip. Its very low standby pow­ er requirement makes it ideal for applications re­ quiring non-volatile storage with back-up

GM76C28-10

Abstract: GM76C28-12 GM76C28 Non-Volatile RAM TA2B
Contextual Info: REV. J PRODUCT SPECIFICATION GM76C28 CMOS 16K-BIT STATIC RAM Pin Configuration Description The G M 7 6 C 2 8 10/12 is a 2 ,0 4 8 words X 8 bits asyn­ chronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes

CROSS MITSUBISHI

Abstract: UPD446 tc55257 tmm2016 sony cross reference sgs thomson tmm2018 AKM6264 hm6264 IDT71256
Contextual Info: SRAM CROSS REFERENCE PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. PART DEVICE MANUFACTURER NUMBER MOSEL PART NO. 2K X 8 Fujitsu Goldstar Hitachi Hitachi Hyundai IDT NEC RCA SGS Thomson Toshiba Toshiba Toshiba UMC Winbond MB8416 GM76C28 HM6116 HM6216 HY6116

GM76C28A-10

Abstract: GoldStar 239J TAE 1102 GM76C28 GM76C28A GM76C28A-12
Contextual Info: GM76C28A 2,04-8 WORDS x 8 BIT CMOS STATIC RAM Pin C on fig u ra tio n D escrip tio n The GM76C28A is 2,048 w ords x 8 bits asyn­ chronous, static random access m e m o ry on a monolithic CMOS chip. Its very low standby pow ­ er requirem ent m akes it ideal for applications re­

GM76C28A-10

Abstract: GoldStar GM76C28A GM76C28A-12 239J
Contextual Info: GM76C28A 2,048 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C28A is 2,048 words x 8 bits asyn­ chronous, static random access memory on a monolithic CMOS chip. Its very low standby pow­ er requirement makes it ideal for applications re­ quiring non-volatile storage w ith back-up

GM7164-12

Abstract: GM231024 GM76C28-12 GM76C88 GM76C256-55 GM7164-15
Contextual Info: G OLDSTAR T E C HNOLOGY INC/ eiE D • 4050 757 0002472 3 T T -« MEMORY T-V é-23-/5 T- Hb -a -27 T~V6~i3 ~ 5 □ RAMs, ROMs • Static RAM Process Organization 2,048X 8 8,192X 8 CMOS 65,536X1 16,384X4 32,768X 8 Part Number Access Time GM76C28-35 35NS GM76C28-45

GM76C28A-10

Abstract: datasheet CI 556 GoldStar GM76C28A GM76C28A-12
Contextual Info: GM76C28A 2,048 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration The GM76C28A is 2,048 w ords x 8 bits asyn­ chronous, static random access m em ory on a monolithic CMOS chip. Its very low standby pow­ er requirem ent m akes it ideal for applications re­

GoldStar

Abstract: GM76C28A-10 GM76 saft GM76C28A GM76C28A-12
Contextual Info: GM 76C28A 2.048 WORDS x 8 BIT CMOS STATIC RAM Description P in C onfiguration The GM76C28A i5 2.048 words x 8 blU asyn­ chronous, static random access memory on a monolithic CMOS chip. Its very low standby pow­ er requirement make* it ideal for applications re­

Contextual Info: OCT 16 m? GoldStar GM76C28 CMOS 16K-BIT STATIC RAM GOLD STAR CO., LTD. Description The GM76C28to/u is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up

K23751

Abstract: GM76C28-10 k2375 GM76C28 GM76C28-12
Contextual Info: OCT 1 5 »s? G o ld S t a r GO LD STAR CO.,LTD. GM76C28 CMOS 16K-BIT STATIC RAM Description The G M 76C28io/i2 is a 2,048 words x 8 bits asynchronous, static,random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage w ith back-up

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

4170A

Abstract: mask ROM Dynamic RAM 4M x 8 71C4400B GM23C410 64K x 8 BIT DYNAMIC RAM Dynamic RAM 64K x 1 static+ram+32kx8 STATIC+RAM+6264
Contextual Info: PRODUCT INDEX DRAM GM71C1000B/BL GM71C4256B/BL GM71C4100B/BL GM71C4100C/CL GM 71C41OOD/DL GM 71C4400B/BL GM 71C4400C/CL GM 71C4400D/DL GM71C S 4800A/AL GM71C(S)4260A/AL GM71C(S)4270A/AL GM 71C(S)4170A/AL GM71C16100A GM71C16400A GM71C17400A GM 71C(S) 16160 A/AL

GM76C88AL FW

Abstract: 71C4260 GM71G GM76C28A GM23C32000 LR-80 CLR-80 HR80 Tlr8
Contextual Info: FUNCTION GUIDE DRAM Capacity 1M Bit 4M Bit >rg Type No Max Access Tim e Current (mA Power Supply Feature tftAC U'AC Ia a Active GM71C1000B/BJ/BZ-60 60 20 30 90 GM71C1000B/BJ/BZ-70 70 20 35 80 GM71C1Q0ÜB/BJ/BZ-80 80 25 40 70 GM71C1000BL/BLJ/BLZ-60 60 20

CX20106A

Abstract: GL7805 GL386 GL1150 GL7809 GL317 GLC556 LA7830 GL1151 GL3401
Contextual Info: TABELA DE EQUIVALÊNCIAS SEMICONDUTORES GOLDSTAR formerly hosted by http://www.robvendas.hpg.ig.com.br/APOST/GOLD.HTM 1 of 6 G53 GAS105 LAG553-2 2SB463 - - 2SB474 GD75188 GD75189 DS1488 DS1489 SN75188 SN75189 GE4 GE1012 48-124376 MOC3012 - - GE3009 GE3010

GM76C256all

Abstract: 16M-DRAM LT-860 GM23C400 GM76C28A GM23C810QA-12 LR-80 BFW12 GM23C8001 GM23C410
Contextual Info: FUNCTION GUIDE DRAM Capacity 1MBit Org 1W0 Type No 4Wt1 1Mk4 Current mA Power Supply Feature Package (m il) Avail 18DIP(300) NOW tCAC tA A Active S/B GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C 10OÛB/BJ/BZ-ÔO 60 70 80 20 20 25 30 35 40 90 eo 70 1 GM71C10006UBLJ/BLZ-60

GM71C4400BJ70

Abstract: GM71C4400BLT70 GM71C4100CJ60 GM76C256BLL-70 GM76C8128ALLFW70 GM71C4100CJ70 1gm7 GM76C256BLL70 GMM7362000BSG-70 76C256
Contextual Info: MEMORY LINE-UP 1. DRAM 60ns IM IM xl GM 71C1000B-70 G M 7IC1000BJ-60 GM7 ] C 1OOOBJ-70 G M 7 1C 1OOOBJ-80 GM 71C1000BZ-60 GM 71C1000BZ-70 - 1 GM 71C1000BZ-80 GM71C1000HI,-60 > - ŒGM 71C1000BI.-70 M 71C1000BL-80 GM71C1000BLZ-60 GM71CIOO0BI.Z-70 G M 7IC I000H iy.-80