GM76 Search Results

lh62256

Abstract: 128k x8 SRAM TSOP upd431000-70 TC55257 Hitachi HM628512 EOL hm62v16512 CY7C1049 hm62256 K6R4004V1C UPD43256
Contextual Info: Hitachi SRAM Cross-Reference Guide June 2001 256K Low Power Bytewide 32K x8 55ns, 70ns and 85ns standard speeds Basic Part # HM62256 K6T0808C1 CY62256 TC55257 uPD43256 W24257 GM76C256C LH62256 Hitachi * Samsung Cypress Toshiba NEC Winbond Hyundai Sharp Speed s

gm76c88

Abstract: GoldStar GoldStar gm76c88 CS13 GM76C88-10 GM76C88-70 GM76C88-85 cs1030
Contextual Info: GOLDSTAR TECHNO LOG Y INC/ SIE D 402fl757 D 0 D 2 S n 3 PRODUCT SPECIFICATION GM76C88 G o ld S ta r GOLD STAR CO., LTD. 8,192 X 8 BIT STATIC RAM T - H Description Pin Configuration The GM76C88 is 65,536 bit staic random access memory organized as 8,192 words by 8 bits using CMOS

Contextual Info: <ä v GM76C8128A/AL/ALL GoldStar 131,072 WORDS x 8 BIT CMOS STATIC RAM GOLDSTAR ELECTRON CO., LTD. Pin Configuration Description The GM76C8128A/AL/ALL is a 1,084,576 bits stat­ ic random access memory organized as 131,072 words by 8 bits. Using a 0.8um advanced CMOS

Contextual Info: m PRELIMINARY GM76FV8128,GM76FU8128,GM76FS8128,GM76FR8128 LG Semicon Co.,Ltd. 131,072 w o r d s x 8 b i t CMOS STATIC RAM Description Pin Configuration The GM76FV8128 / GM76FU8128 / GM76FS8128 / GM76FS8128 is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a

Contextual Info: PRELIMINARY SPECIFICATION REV. 1 GM76C256/L/LL 32,768x8 BIT STATIC RAM HIGH PERFORMANCE Pin Configuration Description The G M76C256/L/LL is a 262,144 bit static random access mem ory organized as 32,768 words by 8 bits £ 1 A>2 C 2 Ar C 3 a. : 4 As C 5 A. C 6

GM76C28-10

Contextual Info: PRODUCT SPECIFICATION REV. J GM76C28 CMOS 16K-BIT STATIC RAM Pin Configuration Description The G M 7 6 C 2 8 10/12 is a 2 ,0 4 8 words X 8 bits asyn­ chronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes

Contextual Info: GM76U8128CL/CLL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76U8128CL/CLL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and it provides high speed operation with minimum

gm76c88

Abstract: GM76C88-10 GM76C88-12 GM76C88-85 cs1035
Contextual Info: PRODUCT SPECIFICATION G M 76C 88 8,192 x 8 BIT STATIC RAM D e s c rip tio n P in C o n fig u ra tio n Top View The GM76C88 is a high speed CMOS static RAM organized as 8,192x8 bits. It is manufactured using GSS’s high performance CMOS technology. Access times as fast as 85/100/120 ns are available

GM76C256CLLFW70

Abstract: GM76C8128CLLFW70 GM76C8128CLLFW55 GM76C256CLLFW55 SOP28 gm76U8128 GM76V8 SOP32 GM76C256CLLFW-70 gm76U8128CLL
Contextual Info: C M O S S TAT I C R A M CMOS SRAMS Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70 GM76C256CLLT-70 GM76V256CLLFW-100 GM76V256CLLT-100 GM76U256CLLFW-120 GM76U256CLLT-120 GM76C8128CLLFW-55

GM76C256CLLFW70

Abstract: GM76V256CLLT-85 SOP28 GM76C8128CLLFW70 uPD431000 GM76C8128CLLT70 GM76C8128CLLFW55
Contextual Info: C M O S S TAT I C R A M CMOS SRAMS • • • • • • • • • • • • • • • • • • • • • • • New Product Part Number GM76C256CLLFW-55 GM76C256CLLT-55 GM76V256CLLFW-85 GM76V256CLLT-85 GM76U256CLLFW-100 GM76U256CLLT-100 GM76C256CLLFW-70

GM76C256CLFW-W

Abstract: GM76C256CLLT-W GM76C256CLL-W GM76C256CLT-W GM76C256CL-W GM76C256CW GM76C256CLL
Contextual Info: GM76C256CW Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 00 Revision History Insert Revised - Datasheet format change - PDIP package type insert - Pin configuration change

battery c-s2

Abstract: 76C8128 566 function
Contextual Info: GM76C8128BSL LG Semicon Co.,Ltd. 131,072 WORDS x 8 BIT CMOS STATIC RAM Description Pin Configuration The GM76C8128SL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.7«m advanced CMOS technology and it provides high speed operation with minimum

GM76C8128all

Abstract: GM76C8128A GM76C8128
Contextual Info: LG Semicon Co.,Ltd. GM76C8128A/AL/ALL 131,072 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The G M 76C 8128A/AL/ALL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. U sing a 0.8um advanced CMOS technology, it provides high speed operation with

GM76C256B

Contextual Info: LG Semicon Co.,Ltd. GM76C256BL/BLL-W 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256BL/BLL-W is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. Using a 0.8um advanced CMOS technology and operated from a single 2 7V to 5.5V supply.

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

GM76C256cll

Contextual Info: @ LG Semicon. Co., LTD Pin Configuration Description The GM76C256C is a 262,144 bits static random access memory organized as 32,768 words by 8 bits. U sing a 0.8am advanced CMOS technology, it provides high speed operation with minimum cycle time o f 55/70/85ns. The device is placed in a low

Contextual Info: m GM76C8128CL/CLL 131,072 WORDS x 8 BIT LG Semicon Co.,Ltd. CMOS STATIC RAM Description Pin Configuration The GM76C8128CL/CLL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6wm advanced CMOS technology and it provides high speed operation with minimum

Contextual Info: m LG Semicon Co,Ltd, Description The GM76FV28 / GM76FU28 / GM76FS28 / GM76FR28 is a 2,097,152 bits static random access memory organized as 262,144 words by 8 bits. Using an advanced Full CMOS technology and it provides high speed operation with minimum cycle time of

GM76C256

Abstract: GoldStar GM76C256 goldstar
Contextual Info: GM76C256/L/LL GoldStar 32,768 W O R D S x 8 BIT GOLDSTAR ELECTRON CO., LTD. CMOS STATIC RAM Description Pin Configuration The GM 76C256/L/LL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CM OS technology, and operated

GM76C8128all

Abstract: 76C812
Contextual Info: 7025 @ LG Semicon. Co. LTD Description Pin Configuration The GM76C8128A/AL/ALL is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.8«m advanced CMOS technology, it provides high speed operation with minimum cycle time of 70/85/100ns. The device is

76c88

Abstract: GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88
Contextual Info: 1» LG Semicon. Co. LTD. Description Fin Configuration The GM76C88AL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology and operated from a single 5V supply. Advanced circuit techniques provide low power feature with a maximum operating current of

76C256

Abstract: GM76C256 goldstar GM76C256L-85
Contextual Info: GOLDSTAR TECHNOLOGY INC/ 47E 4D2Ô7S7 D 0003502 GoldStar GST 4 T -y ê-2 3 -IZ GM76C256/L/LL 32,768 WORDS x 8 BIT CMOS STATIC RAM Pin Configuration Description The GM76C256/L/LL is a 262,144 bit static ran­ dom access memory organized as 32,768 words by 8 bits using CMOS technology, and operated

Contextual Info: PRODUCT SPECIFICATION GM76C88 8,192 x 8 BIT STATIC RAM Description Pin Configuration Top View The GM76C88 is a high speed CMOS static RAM organized as 8,192x8 bits. It is manufactured using GSS’s high performance CMOS technology. Access tim es as fast as 85/100/120 ns are available

Contextual Info: PRELIMINARY GM76FV16256/ GM76FU16256/ GM76FS16256 GM76FR16256 262 , 144w o r d s x 16 b it CMOS STATIC RAM LG S e m i c o n C o .,L t d . Description Features The G M 76FV 16256/ G M 76FU 16256/ G M 76FS16256/ •Power Supply V oltage G M 76FR 16256 is a 4,194,304 bits static random access