HY62K Search Results

Contextual Info: HY62KF08401C Series 512Kx8bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

VDR 0047

Contextual Info: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Dec.26.2001 Preliminary 0.1 Absolute Maximum Ratings - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V

hy62kt081e

Abstract: HY62VT08081E-DPC
Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type

8X13

Abstract: HY62KF08401C HY62KF08401C-DS HY62KF08401C-I HY62KF08401C-SS
Contextual Info: HY62KF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Mar.21.2001 Final 01 Changed Isb1 values Jun.07.2001 Final This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

MARKING HYNIX

Abstract: MARKING HYNIX Origin Country Hynix Semiconductor VDR 0047 HY62KF16403E HYNIX Origin Country
Contextual Info: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark Dec.26.2001 Preliminary 00 Initial Draft 01 Absolute Maximum Ratings Nov.14.2002 - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V

HY62KT08081E-C

Abstract: HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808
Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type

VDR 0047

Abstract: MARKING HYNIX Origin Country
Contextual Info: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark Jan.19.2002 Preliminary 00 Initial Draft 01 DC Electrical Characteristics Nov.06.2002 - ICC changed 4mA -> 3mA

MARKING HYNIX Origin Country

Abstract: MARKING HYNIX HYNIX Origin Country
Contextual Info: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any

Y62VT

Abstract: ATA 2388
Contextual Info: HY62K U.V T08081 E Series 32K x 8 b it C M O S SRAM FEATURES The HY62K(U,V)T08081 E is a high-speed, low power and 32,786 X 8-bits CM O S Static Random Access Memory fabricated using Hyundai's high performance CM OS process technology. It is suitable for use in low voltage operation and

VDR 0047

Abstract: HY62KF08802B HY62KF08802B-DD HY62KF08802B-SD MARKING HYNIX Origin Country HYNIX Origin Country
Contextual Info: HY62KF08802B Series 1Mx8bit full CMOS SRAM Document Title 1M x 8bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Jan.19.2002 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

VDR 0047

Abstract: HY62KF16403E HYNIX Origin Country
Contextual Info: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No 00 History Initial Draft Draft Date Remark Dec.26.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility

TC5118160

Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Contextual Info: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

256Kx16bit

Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

TC554161A

Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

11.0592 CRYSTAL

Abstract: cold call sheet for estate agent realtek Lot Code 3000T Z180 RFC1145 flash sst29 dynamic c code control LCD rabbit example Rabbit-3000-based realtek identification Lot Code
Contextual Info: Rabbit 3000 Microprocessor Designer’s Handbook 019-0112 • 020517-A This manual or an even more up-to-date revision is available for free download at the Rabbit website: www.rabbitsemiconductor.com ™ Microprocessor Designer’s Handbook Rabbit 3000

rabbit processor

Abstract: A812 hynix nand 1G rabbit4000 Z80 RAM 2 kb 11.0592 CRYSTAL FDV303N 303 circuit diagram of Rabbit 2000 hynix 1.8 memory flash Rabbit 2000
Contextual Info: Rabbit 4000 Microprocessor Designer’s Handbook 019-0156 • 080702-E The latest revision of this manual is available on the Rabbit Web site, www.rabbit.com, for free, unregistered download. ® Microprocessor Designer’s Handbook Rabbit 4000 Part Number 019-0156 • 080702–E • Printed in U.S.A.

Rabbit 2000

Abstract: Z80 RAM 2 kb Automatic sprinkler control system crystal quartz 29.4912 flash sst29 hynix 1.8 memory flash Z180 070720-D
Contextual Info: Rabbit 3000 Microprocessor Designer’s Handbook 019-0112 • 070720-D The latest revision of this manual is available on the Rabbit Semiconductor Web site, www.rabbit.com, for free, unregistered download. ® Microprocessor Designer’s Handbook Rabbit 3000

TC55VEM416AXBN

Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
Contextual Info: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA

UM62256EM-70LL

Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
Contextual Info: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B

MBI5024

Abstract: dm13c macroblock MBI5024 MBI6030 K4S641632H Dm413 CS18LV00645 CS18LV4096 MBI5026 CS18LV40963
Contextual Info: LED Driver IC for Display Org. Chiplus Macroblock SITI Toshiba Dallas Maxim STMicro Allegro 16 Bit CS8816 / CS8826 MBI5024 / MBI5026 DM134 / DM135 / DM13C TB62706 / TB62726 MAX6969 / MAX6971 STP16C596 / STP16CP05 A6276 8 Bit CS8808/CS8818 MBI5167 / MBI5168

2 pin crystal oscillator 11.0592 mhz

Abstract: ring COUNTER crystal oscillator 11.0592 mhz USB 2.0 SPI Flash Programmer schematic bc 7-25 Hynix Cross Reference datasheet of 16450 UART ATMEL serial EEPROM 32K 1M STATIC RAM "32 PIN" hynix 1.8 memory flash
Contextual Info: Rabbit 3000 Microprocessor Designer’s Handbook 019-0112 • 030607-B This manual or an even more up-to-date revision is available for free download at the Rabbit website: www.rabbitsemiconductor.com ® Microprocessor Designer’s Handbook Rabbit 3000

um61256

Abstract: um611024 SRAM 64KX8 5V A29F002 TC51V4265 rom at29c010 WINBOND cross reference MT48LC8M16A2 ks0723 k4s561632 IDT72V245
Contextual Info: Cross Reference Your Memory Provider part number brand AMIC part number Description µPD4218165 µPD4218165 µPD424260 µPD431000A µPD43256B µPD441000L-B µPD442000L-B µPD442012L-XB µPD444012L-B µPD4504161 28F160S3/B3/C3 A29F002 AM29DL162C/D AM29DL163C/D