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Leeson GT0808 (184TTDBD6089) AC MOTOR, 2, 1200, DP, 184T, 3, 60, 200
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	GT0808 (184TTDBD6089)	Bulk		7 Weeks	1	1 $887.47 10 $887.47 100 $887.47 1000 $887.47 10000 $887.47	Get Quote
FIBOX UL PCT 080810 (7022571) 3.2 X 3.1 X 3.7 INCH UL LISTED NEMA 4X POLYCARBONATE ENCLOSURE WITH TRANSPARENT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	UL PCT 080810 (7022571)	Bulk		1 Weeks	1	1 $54.34 10 $46.19 100 $41.84 1000 $41.84 10000 $41.84	Get Quote
SK Hynix Inc HY62WT08081EDG70C Electronic Component
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	HY62WT08081EDG70C		234			1 - 10 - 100 - 1000 - 10000 -	Get Quote
SK Hynix Inc HY62WT08081E-DG70C Memory ICs
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	HY62WT08081E-DG70C		661			1 - 10 - 100 - 1000 - 10000 -	Get Quote

T08081 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
hy62kt081e Abstract: HY62VT08081E-DPC Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type	Original	HY62K T08081E 32Kx8bit T08081 HY62vT081E HY62KT081E HY62UT081E hy62kt081e HY62VT08081E-DPC	PDF
Contextual Info: HY62W T08081E Series 32K x8b it CMOS SRAM DESCRIPTION The T08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It Is suitable for use in low voltage operation and	OCR Scan	HY62W T08081E HY62WT08081E 600mil 330mll HY62WT08081E	PDF
HY62KT08081E-C Abstract: HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808 Contextual Info: HY62K U,V T08081E Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~3.3V / 3.0~3.6V / 2.7~3.6V Low Power Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Merged 3.0V/3.3V SPEC Jan.20.2000 Final 01 Revised - Marking Information Change : SOP Type	Original	HY62K T08081E 32Kx8bit T08081c HY62vT08081E HY62KT08081E HY62UT08081E 100ns HY62KT08081E-C HY62KT08081E-E HY62KT08081E-I HY62UT08081E-C HY62UT08081E-E HY62VT08081E-C HY62VT08081E-E HY62VT08081E-I t0808	PDF
Y62VT Abstract: ATA 2388 Contextual Info: HY62K U.V T08081 E Series 32K x 8 b it C M O S SRAM FEATURES The HY62K(U,V)T08081 E is a high-speed, low power and 32,786 X 8-bits CM O S Static Random Access Memory fabricated using Hyundai's high performance CM OS process technology. It is suitable for use in low voltage operation and	OCR Scan	HY62K T08081 600mil 330mil Y62vT08081 T08081E Y62VT ATA 2388	PDF
BS62LV256-70 Abstract: M5M5408 BS62UV256-15 M5M5408B-55 t0808 Contextual Info: Package Descriptions PC / PI = PDIP SRAM CROSS REFERENCE 7700 Irvine Center Dr. STE: 420 SC / SI = SOP Irvine, CA 92618 Contact: TC / TI = TSOP Lena Patel STC / STI = STSOP BC / BI = BGA 8 x 10 email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277	Original	32Kx8 128Kx8 256Kx8 BS62XV256-25 BS62UV256-15 BS62LV256-70 BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62LV256-70 M5M5408 BS62UV256-15 M5M5408B-55 t0808	PDF
256Kx16bit Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 Contextual Info: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V	OCR Scan	GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16	PDF
FBGA 9 x 20 Abstract: HY62CT08081E hynix hy T0808 Contextual Info: Ordering Information Old Part No. System HY XX X XX X X X X X XX XX HYUNDAI HY XXX I TEMPERATURE BLANK : 0°C ~ 70°C E : -25°C - 85-C I : -40°C ~ 85°C : Memory Product PRODUCT GROUP 62 63 67 : Slow SRAM : Fast SRAM : Sync SRAM SPEED 80 10 12 15 17 20 25	OCR Scan	100ns 120ns 150ns 128KX 512Kx 256Kx HY62UF16101C HY62QF16101C HY62SF16101C HY62UF16201A FBGA 9 x 20 HY62CT08081E hynix hy T0808	PDF
Contextual Info: H Y fì?C T 080R 1F ñ e rifis 32K x8bit CMOS SRAM FEATURES The T08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hyundai's high performance CMOS process technology. It is suitable for use in low voltage operation and	OCR Scan	HY62CT08081E 600mil 330mil HY62CT08081E	PDF