512KX16BIT Search Results

Contextual Info: HY62SF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001

kor 2001

Contextual Info: HY62LF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release Draft Date Remark May.29.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any

Contextual Info: HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

HYSF6804A

Abstract: HY62SF16804A HY62SF16804A-C HY62SF16804A-I
Contextual Info: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

HY62LF16804A

Contextual Info: HY62LF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

MARKING code TACS

Contextual Info: HY62LF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary 05 Change AC Characteristics

Contextual Info: HY62LF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Draft Draft Date Remark May.29.2001 Preliminary This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc does not assume any

Contextual Info: HY62SF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No 04 History Initial Revision History Insert Revised - Reliability Spec Deleted Draft Date Jul.02.2000 05 Change AC Characteristics

Contextual Info: HY62QF16803A 512Kx16bit full CMOS SRAM Preliminary DESCRIPTION FEATURES The HY62QF16803A is a high speed, super low power and 8Mbit full CMOS SRAM organized as 524,288 words by 16bits. The HY62QF16803A uses high performance full CMOS process technology and is designed for high speed and

Contextual Info: HY62UF16803A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History 04 05 Draft Date Remark Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

Contextual Info: HY62LF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 2.5V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Apr.10.2001 Preliminary 01 Change Logo - Hyundai à Hynix Apr.28.2001

Contextual Info: HY62SF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark May.29.2001 Preliminary 00 Initial Release 01 DC Electrical Characteristics Oct.22.2002

HYNIX lot date code

Abstract: HY62UF16806A-SMC
Contextual Info: HY62UF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date 00 Initial Draft Feb.21.2001 01 Change Logo - Hyundai à Hynix Apr.28.2001 02 Change DC Parameter

HY62UF16804A

Abstract: HY62UF16804A-C HY62UF16804A-I
Contextual Info: HY62UF16804A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark 04 Initial Revision History Insert Revised - Reliability Spec Deleted Jul.02.2000 Preliminary

Contextual Info: HY62SF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 1.8V Super Low Power Full CMOS slow SRAM Revision History Revision No History Draft Date Remark May.29.2001 Preliminary 00 Initial Release 01 DC Electrical Characteristics Oct.22.2002

HY62UF16806A

Abstract: HY62UF16806A-C HY62UF16806A-I
Contextual Info: HY62UF16806A Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Draft Feb.21.2001 01 Change Logo - Hyundai à Hynix Apr.28.2001 02 Change DC Parameter - Isb1 LL : 40uA à

Contextual Info: HY62UF16806B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release 01 DC Para Change Icc 4mA à Icc1 Min 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à

Contextual Info: HY62UF16804B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release 01 DC Para Change Icc 4mA à Icc1 Min 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à

Contextual Info: NanoAmp Solutions, Inc. 1982B Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N08T1630C2 1 A N08T1625C2(1)A N08T1618C2(1)A Advance 512Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The N08T16xxC2A, is a family of integrated memory devices containing a low power 8 Mbit SRAM

Contextual Info: HY62UF16800B Series 512Kx16bit full CMOS SRAM Document Title 512K x16 bit 3.0V Super Low Power Full CMOS slow SRAM Revision History Revision No History 00 Initial Release 01 DC Para Change Icc 4mA à Icc1 Min 40mA à Icc1(1us) 8mA à Isb 0.1mA à Isb1 25uA à

ks0164

Abstract: 3231 audio ic hd3-33 KS0165 MPU-401 wavetable synthesizer digital reverb processor diagram samsung i2s MA10 MPU401
Contextual Info: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wavetable synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The

KS0164

Abstract: samsung schematics processor KS0174
Contextual Info: KS0164 Multimedia Cl Cf*1 ELECTRONICS OVERVIEW The KS0164 wavetable synthesizer chip represents the state-ofthe-art in multimedia audio technology. The KS0164 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU and MPU-401 compatibility into a single chip.

Running eCos on LPC2214

Abstract: command words lcd display 16x2 USB-RS232 LCD 16X2 5V RS232 Driver MX26LV800BTC CS8900A driver lcd 16x2 lcd 16x2 instruction set 71V416 LPC2214
Contextual Info: AN10605 Running eCos on LPC2214 Rev. 01 — 1 August 2007 Application note Document information Info Content Keywords eCos, RTOS, LPC2214, Olimex Abstract Describes the steps to run eCos on Olimex LPCE-2214 evaluation board. AN10605 NXP Semiconductors Running eCos on LPC2214

mil 1553b

Abstract: MIL-STD-1553B MIL-STD1553B 1879BA1T bc power module 1553b MILSTD-1553B 9698 MB2614
Contextual Info: RESEARCH CENTER МВ2614 PCI MIL-STD-1553B Interface Module MB2614 PCI board provides with an intelligent and flexible interface between PC and MIL-STD-1553B data bus via redundant channel. Features: • • • • • 1879ВА1Т MIL-STD-1553B interface terminal