S12KX16 Search Results

TME 57

Contextual Info: ^ E D I EDI8F16512C S12Kx16 SRAM Module ElECTUONC Œ SG N S N C .i 512KX16 Static RAM CMOS, Module Features 512Kx16bitCMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F16512LP • TTL Compatible Inputs and Outputs

Contextual Info: «ffí 1 £ 1993 □PM D P S 5 1 2 X 1 6 n 3 Dense-Pac Microsystems, Inc. Ceramic, S12Kx16 SRAM Stack Modules O D E S C R IP T IO N : The D PS512X16n3 SRAM "STACK" modules are a revolutionary new memory subsystem using Dense-Pac Microsystems' ceramic Stackable Leadless Chip Carriers SLCC . Available in straight

EDI8F16512

Contextual Info: WDl EDI8F16512Ç 512KX16 SRAM Module ELECTRONIC. LÉSIGNS, INC.i 512KxWStatic RAM CMOS, Module iF eatures The EDI8F16512C is a 8192K bit CMOS Static RAM based 512Kx16bitCM0S Static on eight 128Kx8 Static RAMs mounted on a multi-layered Random Access Memory

Contextual Info: intei 28F800BV/CE 8-Mbit 512Kx16,1024Kx8 SmartVoltage Boot Block Flash Memory Family S m artDie P roduct Specification m Intel SmartVoltage Technology — 5 V or 12 V Program/Erase — 2.7 V, 3.3 V, or 5 V Read Operation — Program Time Reduced 60% at 12 V

Contextual Info: PRELIM INARY p i l C R Q ’ i! r\ v. '’ t- f M !. I i ü ü ? \ FLASH MEMORY h L. A b i ' 1 ’ IYIBG x rf i„IE i\,1 0 h V MT28F800B1 FEATURES • Eleven erase blocks: 16KB/8K-word boot block protected Two 8KB/4K-word parameter blocks Eight main memory blocks

Contextual Info: m x EDI8C16512CA m ELECTRONIC DESIGN N C 512Kx16 Static Ram PRELIMINARY 512Kx16 CMOS, High Speed Static RAM Features The EDI8C16512CA, a high speed, high performance, 8 512Kx16 bit CMOS Static megabit density Static RAM organized as 512Kx16 bits, contains two 512Kx8 SRAMs.